Nexperia USA Inc. BUK7K15-80EX

Overview

BUK7K15-80EX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 80 V V_DS, 15 mΩ R_DS(on) at 10 V V_GS and 25 °C, AEC-Q101 qualified, and rated for continuous operation up to 175 °C junction temperature. It serves as a high-reliability power switch in automotive load control circuits including transmission solenoids and 48 V boardnet systems.

For engineers reviewing the BUK7K15-80EX datasheet, BUK7K15-80EX pinout, BUK7K15-80EX application, or BUK7K15-80EX equivalent, key selection criteria include its dual-channel layout, repetitive avalanche rating, true standard-level gate drive (V_GS(th) > 1 V at 175 °C), and thermally robust LFPAK56D mounting base interface.

Technical Context

This device integrates two independent TrenchMOS N-channel FETs in a single LFPAK56D package with shared thermal path to mounting base. Each channel supports 80 V blocking, 23 A continuous drain current at T_mb = 25 °C, and 133 mJ non-repetitive avalanche energy under unclamped inductive switching.

It features a standard-level gate requiring ≥10 V for full enhancement, with V_GS(th) guaranteed >1 V even at 175 °C - enabling reliable turn-on in high-temperature engine bay environments. The source-drain diode exhibits 37.7 nC recovered charge and 30.5 ns reverse recovery time at 10 A, supporting efficient synchronous rectification and freewheeling.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a thermally enhanced surface-mount package with exposed copper mounting base for low-inductance, high-current routing and direct PCB thermal conduction. Dimensions: 4.95 × 5.30 mm footprint, 1.02 mm height, 8 leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with BUK7K15-80EX, BSC014N06LS offers lower conduction loss but cannot replace it in 48 V automotive designs due to insufficient voltage rating and lack of qualification; NTMFD4C02N matches AEC-Q101 and temperature rating but requires redesign for 40 V systems, trading off 80 V transient resilience for lower R_DS(on) in lower-voltage applications.

Availability

BUK7K15-80EX is available at Aetrix Electronics and suitable for automotive transmission control, 48 V mild hybrid power distribution, and electric power steering motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK7K15-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets with emphasis on efficiency and miniaturization.

BUK7K15-80EX belongs to Nexperia's Automotive Logic and Power portfolio, designed specifically for high-reliability, high-temperature automotive power switching - emphasizing AEC-Q101 compliance, thermal robustness, and ruggedness in harsh electrical environments.

FAQ

Is BUK7K15-80EX pin-compatible with other LFPAK56D dual MOSFETs?

Yes - BUK7K15-80EX uses the standardized SOT1205 footprint and pinout (S1-G1-S2-G2-D2-D2-D1-D1). It is mechanically compatible with other LFPAK56D dual FETs like BUK7K23-80E, though electrical parameters differ. Layout reuse is possible, but gate drive and thermal design must be verified per device characteristics.

What is the maximum continuous drain current per channel at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current per channel drops to 16 A at T_mb = 100 °C with V_GS ≥ 10 V. This reflects thermal derating due to reduced heat transfer margin; total power dissipation at that point is approximately 2.56 W per channel assuming 15 mΩ R_DS(on).

Does BUK7K15-80EX require a negative gate voltage for safe turn-off in high-dV/dt environments?

No - BUK7K15-80EX has a V_GS rating of ±20 V and is specified for standard-level gate drive. Its V_GS(th) remains >1 V at 175 °C, ensuring noise immunity without negative bias. However, a small negative gate voltage (e.g., –2 V) may be used to improve dV/dt immunity in ultra-noisy ECU environments, within absolute maximum ratings.

Can the two channels be paralleled to increase current handling?

No - the channels are electrically isolated (separate sources and gates), but their drains are not internally connected. Paralleling would require external wiring of D1/D2 and S1/S2, introducing imbalance due to trace inductance and thermal coupling differences. For higher current, use a single-channel 80 V FET with lower R_DS(on) or dedicated paralleled devices with matched characteristics.