Nexperia USA Inc. BUK7K17-80EX

Overview

BUK7K17-80EX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 80 V V_DS, 12.5 mΩ R_DS(on) at 10 V V_GS and 25 °C, and qualified to AEC-Q101 for automotive use. It delivers 21 A continuous drain current at T_mb = 25 °C and supports thermally demanding applications up to 175 °C junction temperature - deployed in transmission control and 48 V solenoid switching.

For engineers reviewing the BUK7K17-80EX datasheet, BUK7K17-80EX pinout, BUK7K17-80EX application, or BUK7K17-80EX equivalent, key selection criteria include its dual-channel layout, 175 °C thermal rating, repetitive avalanche capability, true standard-level gate drive (V_GS(th) > 1 V at 175 °C), and LFPAK56D package's low R_th(j-mb) of 2.36 K/W.

Technical Context

This device integrates two independent N-channel TrenchMOS transistors in a single LFPAK56D package with shared mounting base, enabling compact dual-switch topologies without cross-conduction risk. Its gate threshold voltage remains functional above 1 V even at 175 °C, ensuring reliable turn-on under high-temperature automotive conditions.

The MOSFET features fully specified avalanche ruggedness (116 mJ non-repetitive E_AS) and source-drain diode parameters including 37.1 nC recovered charge and 30.1 ns reverse recovery time - critical for inductive load commutation in motor and solenoid drivers.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a dual-side cooled, surface-mount plastic package with 8 leads and exposed mounting base for low thermal resistance. Dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), with 1.27 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with BUK7K17-80EX, BSC028N06NS3 offers lower on-resistance but lacks 80 V rating and AEC-Q101 compliance for 48 V systems, while NTMFS5C675NL matches thermal and qualification specs but doubles component count and increases thermal resistance - making BUK7K17-80EX optimal for space-constrained dual-switch automotive modules.

Availability

BUK7K17-80EX is available at Aetrix Electronics and suitable for automotive transmission control, electric power steering, and 48 V DC-DC converter designs requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for BUK7K17-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from Philips and now part of Wingtech Technology.

The BUK7K17-80EX belongs to Nexperia's Automotive Logic and Power portfolio, engineered specifically for high-temperature, high-reliability automotive power switching where space, thermal efficiency, and qualification rigor are critical.

FAQ

Is BUK7K17-80EX pin-compatible with standard SO-8 MOSFETs?

No - it uses the LFPAK56D (SOT1205) package, which has different pin assignment and thermal pad layout than SO-8. Pin 1–4 are S1/G1/S2/G2, while pins 5–8 are dual-drain connections (D2/D2/D1/D1). Layout must follow Nexperia's SOT1205 footprint, not generic SO-8 land patterns.

What is the maximum safe operating temperature for continuous use?

The device is rated for continuous operation up to 175 °C junction temperature and qualified per AEC-Q101. Mounting base temperature must be limited to ≤100 °C to sustain 15 A continuous drain current (per Fig. 2), and thermal design must maintain R_th(j-mb) ≤2.36 K/W to avoid exceeding T_j limits.

Does BUK7K17-80EX support gate driving directly from a 3.3 V MCU?

No - it is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement (R_DS(on) = 12.5 mΩ). At 3.3 V, V_GS(th) > 1 V ensures turn-on, but R_DS(on) rises sharply (>100 mΩ), causing excessive conduction loss. A gate driver or level shifter is required for logic-level MCU interfaces.

How is avalanche energy rated, and what does "non-repetitive" mean in practice?

EDS(AL)S = 116 mJ is the single-pulse unclamped avalanche energy limit at T_j(init) = 25 °C. "Non-repetitive" means this rating applies only to rare, transient fault events (e.g., sudden load disconnect), not cyclic operation. Repetitive avalanche capability is confirmed per datasheet Section 2 but requires strict control of pulse width, frequency, and thermal recovery between events.