Nexperia USA Inc. BUK7K23-80EX

Overview

BUK7K23-80EX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 80 V V_DS, 23 mΩ R_DS(on) at 10 V V_GS and 25 °C, AEC-Q101 qualified, and rated for continuous operation up to 175 °C junction temperature - deployed in automotive transmission control and high-reliability 12–48 V power switching.

For engineers reviewing the BUK7K23-80EX datasheet, BUK7K23-80EX pinout, BUK7K23-80EX application, or BUK7K23-80EX equivalent, key selection criteria include dual-channel thermal robustness, repetitive avalanche capability, standard-level gate drive compatibility with 12 V microcontrollers, and LFPAK56D mounting base thermal resistance of 2.84 K/W.

Technical Context

This dual MOSFET integrates two independent TrenchMOS N-channel devices in a single LFPAK56D leadframe package with shared mounting base. Each channel supports 80 V blocking, 17 A continuous drain current at T_mb = 25 °C, and exhibits 7.5 nC Q_GD and 22.8 nC Q_G(tot) for fast switching with low gate drive loss.

The device features true standard-level gate threshold: V_GS(th) > 1 V at T_j = 175 °C ensures reliable turn-on under extreme thermal stress, while its 72 mJ non-repetitive avalanche energy rating (E_DS(AL)S) enables robust fault handling in inductive load circuits without external snubbers.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a thermally enhanced, single-ended surface-mount package with exposed mounting base for direct PCB thermal coupling. Dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), 8 leads, 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N6F7 and NTMFS5C675NL, BUK7K23-80EX uniquely combines 80 V rating, AEC-Q101 qualification, repetitive avalanche ruggedness, and 2.84 K/W thermal resistance - making it the only option qualified for under-hood 48 V solenoid and transmission control without derating or supplemental protection.

Availability

BUK7K23-80EX is available at Aetrix Electronics and suitable for automotive transmission control modules, 48 V mild hybrid DC-DC converters, and electric power steering systems requiring stable component supply across extended vehicle lifecycles.

Supply support for BUK7K23-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

BUK7K23-80EX belongs to Nexperia's Automotive TrenchMOS portfolio - engineered specifically for thermally demanding, safety-critical automotive power switching applications requiring AEC-Q101 compliance and robust avalanche performance.

FAQ

Is BUK7K23-80EX pin-compatible with standard SO-8 dual MOSFETs?

No. BUK7K23-80EX uses the LFPAK56D (SOT1205) package with 8 leads in a 4.95 × 5.30 mm outline and dual drain/source pin paralleling (pins 5&6 = D2, pins 7&8 = D1). Its pin pitch (0.65 mm) and thermal pad layout differ from SO-8 (3.9 × 4.9 mm, 1.27 mm pitch), requiring dedicated PCB footprint redesign.

What is the maximum safe operating temperature for continuous use?

The device is rated for continuous operation up to T_j = 175 °C, validated per AEC-Q101. At T_mb = 100 °C, continuous drain current drops to 12 A per FET (per Fig. 2); sustained operation above 150 °C junction requires thermal modeling using R_th(j-mb) = 2.84 K/W and verified mounting base temperature measurement.

Does BUK7K23-80EX require gate resistors for automotive PWM switching?

Yes. Gate resistors (typically 5–10 Ω) are recommended to control dV/dt and suppress ringing caused by PCB trace inductance and Q_GD-driven Miller effect. The 7.5 nC Q_GD and 22.8 nC Q_G(tot) values indicate moderate gate drive strength - insufficient for direct MCU GPIO driving above 50 kHz without external buffering.

Can BUK7K23-80EX replace single-channel 80 V MOSFETs in existing designs?

It can replace two discrete 80 V N-channel MOSFETs (e.g., BUK9Y80-80E) in space-constrained layouts, but requires verification of gate drive independence, source isolation, and thermal coupling between channels. Shared mounting base improves thermal uniformity but introduces potential crosstalk in high-dI/dt switching - layout separation of gate traces is critical.