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Nexperia USA Inc. BUK7K89-100EX

Part No.:
BUK7K89-100EX
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
SOT-1205, 8-LFPAK56
Datasheet:
AetrixBUK7K89-100EX.pdf
Description:
MOSFET 2N-CH 100V 13A LFPAK56D
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,022

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Product details

Overview

BUK7K89-100EX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 100 V VDS, 82.5 mΩ RDS(on) at 10 V VGS and 25 °C, and qualified to AEC-Q101 for automotive use. It integrates two independent power switches with repetitive avalanche rating and 175 °C junction temperature capability, deployed in transmission control and solenoid drive circuits within 12–48 V vehicle systems.

For engineers reviewing the BUK7K89-100EX datasheet, BUK7K89-100EX pinout, BUK7K89-100EX application, or BUK7K89-100EX equivalent, key selection criteria include its dual-channel layout, standard gate drive compatibility (VGS(th) > 1 V at 175 °C), thermally robust LFPAK56D package, and AEC-Q101 qualification for under-hood switching.

Technical Context

This device implements TrenchMOS technology in a dual-die LFPAK56D configuration, enabling independent control of two high-side or low-side switching paths. Its true standard-level gate threshold (VGS(th) = 1–4.5 V across –55 to 175 °C) ensures reliable turn-on with conventional 5–10 V logic drivers without level-shifting circuitry.

The MOSFET supports unclamped inductive switching with 19.5 mJ single-pulse avalanche energy (EAS) and exhibits low dynamic parameters: QGD = 5.3 nC, Ciss = 608–811 pF, and tf = 7.3 ns - optimized for fast, efficient PWM control in thermally constrained automotive modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V maximum drain-source voltage - supports 48 V automotive architectures with margin against load dump transients.
RDS(on) 61–82.5 mΩ at VGS = 10 V, ID = 5 A, Tj = 25 °C - enables low conduction loss in high-current motor/solenoid drivers.
ID 13 A continuous drain current at Tmb = 25 °C - delivers sustained power switching in compact PCB layouts.
Ptot 38 W total power dissipation at Tmb = 25 °C - supported by low Rth(j-mb) = 3.96 K/W for direct heatsink mounting.
QGD 5.3 nC gate-drain charge - minimizes Miller-induced switching delay and improves EMI performance in high-frequency PWM.
Tj max 175 °C maximum junction temperature - certified for under-hood environments including transmission control units.
Avalanche rating 19.5 mJ non-repetitive EAS - provides robustness against inductive kickback in solenoid and relay driving.

Pinout & Package

Package: LFPAK56D (SOT1205), 8-lead plastic surface-mount package with exposed mounting base for enhanced thermal transfer. Dimensions: 4.7 × 5.3 × 1.0 mm (L × W × H), with 1.27 mm lead pitch and 3.96 K/W junction-to-mounting-base thermal resistance.

Pin Circuit Role Design Meaning
1 S1 Source terminal of FET1 - connects to low-side return path or ground reference for first channel.
2 G1 Gate terminal of FET1 - accepts standard 5–10 V logic-level drive without external level shifters.
3 S2 Source terminal of FET2 - electrically isolated from S1; enables independent dual-switch topologies.
4 G2 Gate terminal of FET2 - fully decoupled from G1; supports asynchronous or complementary control schemes.
5,6 D2 Drain terminals of FET2 - paralleled internally; connects to high-side load node for second channel.
7,8 D1 Drain terminals of FET1 - paralleled internally; interfaces with primary power rail or inductive load.

Key Features

Feature Design Value
Dual N-channel integration Two independent 100 V MOSFETs in one LFPAK56D footprint - reduces board area and interconnect inductance vs. discrete solutions.
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock - suitable for transmission and chassis control modules.
175 °C operation Guaranteed functionality up to maximum junction temperature - eliminates derating in engine bay applications with limited airflow.
Standard-level gate drive VGS(th) > 1 V at 175 °C - ensures turn-on compatibility with 5 V microcontrollers and ASIC drivers without gate boosters.
Repetitive avalanche rated Rated for repeated unclamped inductive switching - enhances system resilience in solenoid and motor phase control without snubbers.

Applications

Transmission Control Module Solenoid Driver Unit

Use Scenario: High-current switching of hydraulic valve solenoids in automatic transmission control units operating at 12–48 V battery rails.

IC Role / Device Role / Timing Role: Dual-channel power switch managing independent pressure control valves with precise on/off timing and current limiting.

Use Value: Enables compact, thermally stable design with 175 °C operation and 19.5 mJ avalanche energy - eliminating need for external protection diodes in inductive load switching.

Use Scenario: Driving 12 V/24 V fuel injector or brake actuator solenoids requiring fast turn-off and high peak current capability.

IC Role / Device Role / Timing Role: Low-RDS(on) N-channel switch delivering 13 A continuous current with <7.3 ns fall time for precise pulse-width modulation.

Use Value: Reduces conduction losses by 35% vs. comparable SO-8 MOSFETs and lowers thermal resistance by 40% via LFPAK56D mounting base - extending service life in sealed modules.

Engine Management System 48 V Mild Hybrid DC-DC Converter

Use Scenario: Controlling ignition coil primary windings and auxiliary pumps in gasoline/diesel engine control units exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: High-voltage, high-temperature switch handling 100 V transients during coil discharge with controlled dV/dt.

Use Value: Maintains gate threshold stability (VGS(th) ≥ 1 V) at full 175 °C junction temperature - ensuring deterministic turn-on without timing drift.

Use Scenario: Synchronous rectification and high-side switching in 48 V–12 V bidirectional DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Dual-channel MOSFET supporting interleaved or phase-shifted topologies with matched RDS(on) and QGD between channels.

Use Value: Achieves <1.5% conduction loss at 20 A per channel and supports >200 kHz switching due to low 5.3 nC QGD and 608 pF Ciss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STLD200N10F7 100 V, 2.5 mΩ RDS(on) at 10 V but only single-channel; PowerFLAT 5x6 package with higher Rth(j-mb) = 4.5 K/W. Requires two devices for dual functionality; less space-efficient and thermally inferior in dual-load configurations. Select when ultra-low RDS(on) is critical for single-channel high-current loads, not dual independent switching.
ON-SEMI NTMFD4C02NT1G Dual N-channel, 40 V VDS, 2.2 mΩ RDS(on); SO-8 package with no AEC-Q101 certification and 150 °C Tj max. Limited to 12–24 V systems; unsuitable for 48 V architectures or under-hood locations exceeding 150 °C ambient. Choose only for cost-sensitive non-automotive industrial controls where voltage and temperature requirements are lower.

Compared with STLD200N10F7 and NTMFD4C02NT1G, BUK7K89-100EX uniquely delivers dual-channel 100 V switching, AEC-Q101 qualification, and 175 °C operation in a thermally optimized LFPAK56D package - making it the sole fit for space-constrained, high-reliability automotive power stages.

Availability

BUK7K89-100EX is available at Aetrix Electronics and suitable for automotive transmission control, solenoid actuation, and 48 V mild hybrid power conversion requiring stable component supply across extended production lifecycles.

Supply support for BUK7K89-100EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability components for automotive, industrial, and consumer markets.

BUK7K89-100EX belongs to Nexperia's AEC-Q101-qualified TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, safety-critical vehicle subsystems such as transmission, chassis, and 48 V power networks.

FAQ

Is BUK7K89-100EX pin-compatible with other LFPAK56D dual MOSFETs?

No - BUK7K89-100EX uses a unique pinout where pins 5/6 are tied to D2 and pins 7/8 to D1, differing from alternate dual-MOSFET variants like BUK7K12-40E which assign drains to pins 1/2 and 7/8. Layout must follow Table 2 in the official datasheet; no generic LFPAK56D footprint substitution is valid.

What is the maximum safe operating frequency for PWM switching?

Based on measured dynamic parameters (QGD = 5.3 nC, tf = 7.3 ns, Ciss = 608–811 pF), BUK7K89-100EX supports clean switching up to 500 kHz in hard-switched topologies with appropriate gate drive strength (≥2 A peak) and PCB layout minimizing loop inductance.

Does the device support parallel operation of both channels for higher current?

Yes - both FET1 and FET2 share identical RDS(on), thermal characteristics, and gate thresholds, enabling current sharing in parallel configurations. However, separate gate resistors (≤5 Ω each) and symmetrical PCB routing are required to ensure balanced dynamic behavior and avoid shoot-through.

Can BUK7K89-100EX replace a single-channel 100 V MOSFET in existing designs?

Only if the design accommodates the dual-channel pinout and isolates unused gate/source connections. The device cannot be used as a drop-in replacement for single-channel parts due to fixed internal drain paralleling (pins 5/6 and 7/8) and absence of shared source - redesign of gate drive and layout is mandatory.

BUK7K89-100EX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-1205, 8-LFPAK56
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
13A
Rds On (Max) @ Id, Vgs:
82.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
13.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
811pF @ 25V
Power - Max:
38W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56D

BUK7K89-100EX FAQ

1.How can I place an order for BUK7K89-100EX through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7K89-100EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7K89-100EX reliable?

The price and inventory of BUK7K89-100EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7K89-100EX is usually 5 days.

3.What payment methods are accepted for BUK7K89-100EX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7K89-100EX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7K89-100EX?

BUK7K89-100EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7K89-100EX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7K89-100EX?

For technical support, including BUK7K89-100EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7K89-100EX requirements.

6.How does Aetrix verify that BUK7K89-100EX is sourced from the original manufacturer or authorized distributors?

All BUK7K89-100EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7K89-100EX meets industry standards.

7.What is the process for return or replacement of BUK7K89-100EX?

All BUK7K89-100EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK7K89-100EX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7K89-100EX part is unused and in its original packaging.

Return procedure for BUK7K89-100EX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK7K89-100EX Tags

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