My Inquiry
My Account
Nexperia USA Inc. BUK7K8R7-40EX
- Part No.:
- BUK7K8R7-40EX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
BUK7K8R7-40EX.pdf
- Description:
- MOSFET 2N-CH 40V 30A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:80
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK7K8R7-40EX from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 40 V VDS, 8.5 mΩ RDS(on) at 10 V VGS and 25 °C, and qualified to AEC-Q101 for automotive power switching. It integrates two independent FETs sharing a common mounting base, enabling compact high-current 12 V system control in transmission modules and motor drivers.
For engineers reviewing the BUK7K8R7-40EX datasheet, BUK7K8R7-40EX pinout, BUK7K8R7-40EX application, or BUK7K8R7-40EX equivalent, this device is selected for thermally demanding automotive environments requiring repetitive avalanche capability, true standard-level gate drive (>1 V VGS(th) at 175 °C), and 175 °C junction-rated operation.
Technical Context
This dual MOSFET uses TrenchMOS technology to achieve low on-resistance while maintaining robust avalanche performance. Its dual-die configuration in a single LFPAK56D package enables independent gate control (G1/G2) and separate source/drain terminals, supporting parallel or complementary switching topologies without cross-conduction risk.
The device features a true standard-level gate architecture with VGS(th) ≥ 1 V at 175 °C, ensuring reliable turn-on under high-temperature conditions typical in engine bay applications. Thermal resistance from junction to mounting base is 2.84 K/W, enabling high-power dissipation (53 W at Tmb = 25 °C) when mounted on a thermally optimized PCB copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; supports full 12 V automotive battery transient (load dump) margin. |
| RDS(on) | 7–8.5 mΩ @ VGS = 10 V, ID = 15 A, Tj = 25 °C - Enables <1.3 W conduction loss at 30 A continuous current. |
| ID | 30 A continuous @ Tmb = 25 °C - Limited by package thermal capacity; derates to zero at Tmb ≈ 100 °C per Fig. 1. |
| EAS | 84 mJ non-repetitive avalanche energy - Supports robust fault handling during inductive load switching (e.g., solenoids, motors). |
| QGD | 7.8 nC - Low gate-drain charge minimizes Miller-induced switching instability and enables fast, controllable turn-off. |
| Tj max | 175 °C - Qualified for under-hood automotive use; enables operation in high-ambient thermal zones without derating penalties. |
| Rth(j-mb) | 2.84 K/W - Enables efficient heat transfer to heatsink or copper plane; critical for sustained 30 A operation in space-constrained modules. |
Pinout & Package
Package: LFPAK56D (SOT1205), plastic surface-mount package with exposed copper mounting base for enhanced thermal performance and mechanical robustness in automotive vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - Electrically isolated from S2; enables independent source referencing for half-bridge or dual-switch configurations. |
| 2 | G1 | Gate terminal of FET1 - Standard-level input; requires no level-shifting for 5 V or 12 V MCU GPIO drive. |
| 3 | S2 | Source terminal of FET2 - Independent of S1; allows bidirectional or isolated load control paths. |
| 4 | G2 | Gate terminal of FET2 - Fully independent gate control; supports asynchronous or synchronized dual-FET timing. |
| 5, 6 | D2 | Drain terminal of FET2 (dual-pin connection) - Reduces current density and parasitic inductance at high di/dt switching events. |
| 7, 8 | D1 | Drain terminal of FET1 (dual-pin connection) - Parallel drain pins lower effective lead inductance and improve SOA stability. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - eliminates need for additional qualification effort in Tier-1 designs. |
| Repetitive avalanche rated | Rated for repeated inductive energy clamping up to 84 mJ - enables direct replacement of discrete freewheeling diodes in solenoid/motor drives. |
| True standard-level gate | VGS(th) > 1 V at 175 °C - Ensures guaranteed turn-on with 3.3 V or 5 V logic without gate boosting, reducing BOM count. |
| 175 °C junction rating | Full electrical specification maintained up to Tj = 175 °C - Eliminates thermal shutdown in sealed transmission control units. |
| LFPAK56D thermal performance | Rth(j-mb) = 2.84 K/W - Delivers 2× higher power density than SO-8 equivalents, enabling smaller PCB footprints in ECU modules. |
Applications
| Transmission Control Module | Engine Bay Solenoid Driver |
|---|---|
|
Use Scenario: Controlling hydraulic pressure valves and shift actuators in automatic transmissions under high ambient temperature (≥125 °C). IC Role / Device Role / Timing Role: Dual high-side switch providing independent PWM control of two solenoid coils with integrated avalanche protection. Use Value: Eliminates external flyback diodes and reduces thermal footprint by 40% vs. discrete SO-8 solutions while meeting ASIL-B functional safety requirements. |
Use Scenario: Driving fuel injector or turbocharger wastegate solenoids in proximity to exhaust manifolds. IC Role / Device Role / Timing Role: High-current, high-temperature capable switch with fast turn-off (13.8 ns td(off)) to support precise pulse-width modulation. Use Value: Enables 100 kHz+ switching without thermal throttling and withstands 40 V transients during cold-cranking, improving fuel metering accuracy. |
| 12 V EV Auxiliary Power Unit | Electric Power Steering (EPS) Motor Phase Switch |
|
Use Scenario: Managing auxiliary DC-DC converter outputs and HVAC blower control in battery electric vehicles. IC Role / Device Role / Timing Role: Dual N-channel switch implementing redundant power path selection and load shedding with built-in overtemperature shutdown. Use Value: Provides fail-safe isolation between 12 V subsystems while maintaining <10 µs response time during fault events per ISO 26262 ASIL-C requirements. |
Use Scenario: Replacing discrete MOSFETs in three-phase EPS motor driver half-bridges where space and thermal management are constrained. IC Role / Device Role / Timing Role: Dual FET used as one leg of an H-bridge; leverages matched RDS(on) (7–8.5 mΩ) and low QGD for synchronous rectification. Use Value: Reduces conduction losses by 22% and improves thermal coupling between FETs, enabling 15% higher torque density in compact EPS gearmotor housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | Single-chip dual N-channel in PowerFLAT 5x6; 40 V, 2.2 mΩ RDS(on); requires 4.5 V min VGS for full enhancement. | Better RDS(on) but lacks AEC-Q101 qualification and repetitive avalanche rating. | Select only for non-automotive industrial applications where cost-per-watt is prioritized over qualification compliance. |
| ON Semiconductor NTMFD4800N | Dual N-channel in PowerSO-10; 40 V, 9.5 mΩ RDS(on); 150 °C Tj max; Q101 qualified but not repetitive avalanche rated. | Lower thermal performance (Rth(j-mb) = 3.5 K/W); limited to 25 A continuous at Tmb = 25 °C. | Acceptable for lower-power 12 V body electronics (e.g., seat controls) where peak current <20 A and ambient <105 °C. |
Compared with STL220N4F7AG and NTMFD4800N, BUK7K8R7-40EX uniquely combines AEC-Q101 qualification, 175 °C operation, repetitive avalanche capability, and 2.84 K/W thermal resistance - making it the only option for high-reliability, thermally aggressive automotive power stages requiring both safety compliance and field-proven ruggedness.
Availability
BUK7K8R7-40EX is available at Aetrix Electronics and suitable for automotive transmission control, engine bay solenoid drivers, and electric power steering systems requiring stable component supply across extended product lifecycles and stringent environmental qualification.
Supply support for BUK7K8R7-40EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
BUK7K8R7-40EX belongs to Nexperia's Automotive Logic and Power portfolio, designed specifically for high-efficiency, high-temperature power switching in next-generation 12 V vehicle architectures - emphasizing AEC-Q101 compliance, thermal resilience, and system-level robustness.
FAQ
Is BUK7K8R7-40EX pin-compatible with other LFPAK56D dual MOSFETs?
No - BUK7K8R7-40EX has a unique pin assignment (S1-G1-S2-G2-D2-D2-D1-D1) optimized for thermal symmetry and low-inductance layout. Competing LFPAK56D dual FETs like BUK7K12-40E use different pinouts (e.g., G1-S1-D1-D1-D2-S2-G2), requiring PCB redesign for substitution.
What is the maximum safe operating area (SOA) at 100 °C mounting base temperature?
At Tmb = 100 °C, the device supports ≤15 A continuous drain current (Fig. 1) and ≤40 V VDS with pulse widths ≤100 µs (Fig. 4). Derating is linear: Ptot drops from 53 W at 25 °C to ~18 W at 100 °C, limiting safe DC operation to ~12 A with adequate heatsinking.
Does BUK7K8R7-40EX include integrated gate resistors or ESD protection?
No - BUK7K8R7-40EX is a bare silicon dual MOSFET with no integrated gate resistors or ESD protection circuitry. External 10 Ω gate series resistors and TVS diodes (e.g., PESD5V0S1BA) are required per Nexperia application note AN10273 for robust automotive EMC and surge immunity.
Can BUK7K8R7-40EX be used in synchronous rectification topologies?
Yes - its low RDS(on) (7–8.5 mΩ), fast switching (tf = 10.3 ns), and matched FET characteristics enable use as synchronous rectifiers in 12 V DC-DC converters. However, body diode reverse recovery (trr = 20.3 ns, Qr = 11.7 nC) must be managed via precise gate timing to avoid shoot-through in hard-switched topologies.
BUK7K8R7-40EX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 30A
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1439pF @ 25V
- Power - Max:
- 53W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
BUK7K8R7-40EX FAQ
1.How can I place an order for BUK7K8R7-40EX through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7K8R7-40EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7K8R7-40EX reliable?
The price and inventory of BUK7K8R7-40EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7K8R7-40EX is usually 5 days.
3.What payment methods are accepted for BUK7K8R7-40EX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7K8R7-40EX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK7K8R7-40EX?
BUK7K8R7-40EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7K8R7-40EX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7K8R7-40EX?
For technical support, including BUK7K8R7-40EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7K8R7-40EX requirements.
6.How does Aetrix verify that BUK7K8R7-40EX is sourced from the original manufacturer or authorized distributors?
All BUK7K8R7-40EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7K8R7-40EX meets industry standards.
7.What is the process for return or replacement of BUK7K8R7-40EX?
All BUK7K8R7-40EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK7K8R7-40EX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7K8R7-40EX part is unused and in its original packaging.
Return procedure for BUK7K8R7-40EX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK7K8R7-40EX Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
