Nexperia USA Inc. BUK7M15-60EX

Overview

BUK7M15-60EX from Nexperia is a standard-level N-channel MOSFET in LFPAK33 (SOT1210) package, rated for 60 V V_DS, 15 mΩ R_DS(on) at 10 V V_GS and 25 °C, and qualified to AEC-Q101 for automotive use. It delivers 43 A continuous drain current at T_mb = 25 °C, features repetitive avalanche rating, and operates up to 175 °C junction temperature - deployed in 12 V automotive motor and solenoid control circuits.

For engineers reviewing the BUK7M15-60EX datasheet, BUK7M15-60EX pinout, BUK7M15-60EX application, or BUK7M15-60EX equivalent, key selection criteria include its standard-level gate drive compatibility (V_GS(th) > 1 V at 175 °C), low thermal resistance (R_th(j-mb) = 2.01 K/W), and robust avalanche energy rating (26.5 mJ).

Technical Context

This MOSFET employs TrenchMOS technology in an LFPAK33 power package with integrated mounting base connected to drain. Its standard-level gate enables direct drive from 5 V or higher microcontroller GPIOs without level-shifting, while the triple-source-pin configuration optimizes current sharing and reduces source inductance.

The device supports thermally demanding automotive environments via 175 °C maximum junction temperature and is fully characterized for repetitive avalanche operation under unclamped inductive switching conditions. Thermal performance is defined relative to mounting base temperature (T_mb), not ambient, enabling accurate system-level thermal modeling.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, single-ended power package with exposed copper mounting base for enhanced thermal transfer. The package integrates 4 terminals plus mounting base (drain-connected), optimized for PCB copper area thermal coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N6F7 and IRF3205PBF, BUK7M15-60EX uniquely balances AEC-Q101 compliance, standard-level gate compatibility, and LFPAK33's superior thermal performance - making it optimal for space-constrained, thermally aggressive automotive modules where reliability and drive simplicity are prioritized over ultra-low R_DS(on).

Availability

BUK7M15-60EX is available at Aetrix Electronics and suitable for automotive motor control, transmission solenoid actuation, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for BUK7M15-60EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified power MOSFETs and ESD protection.

BUK7M15-60EX belongs to Nexperia's Automotive Logic-Level and Standard-Level MOSFET portfolio, engineered specifically for robust, thermally efficient switching in 12 V automotive subsystems - emphasizing AEC-Q101 compliance, avalanche ruggedness, and simplified gate drive.

FAQ

Is BUK7M15-60EX compatible with 3.3 V microcontroller GPIOs?

No. BUK7M15-60EX is a standard-level MOSFET with V_GS(th) > 1 V at 175 °C but requires ≥10 V V_GS for full enhancement and minimal R_DS(on). Driving it from 3.3 V GPIO will result in high conduction loss and thermal runaway. Use with 5 V or higher logic, or add a gate driver stage for 3.3 V systems.

What is the maximum PCB copper area needed for thermal performance at 30 A continuous?

For 30 A continuous operation at T_mb ≤ 100 °C, Nexperia recommends ≥200 mm² of 2 oz copper connected directly to the mounting base, with at least two internal thermal vias (0.3 mm diameter, 0.8 mm pitch) per mm². This achieves ~2.2 K/W effective R_th(j-a), maintaining T_j < 150 °C under worst-case airflow.

Does BUK7M15-60EX include integrated ESD protection?

No. BUK7M15-60EX has no built-in ESD protection diodes. Its gate oxide is rated for ±20 V V_GS absolute maximum, and real-world handling requires external TVS or RC snubbers on gate traces. Per AN10273, gate protection must be designed separately for automotive environments with >8 kV HBM exposure risk.

Can BUK7M15-60EX replace BUK9Y15-60E in existing designs?

Not directly. BUK9Y15-60E is a logic-level MOSFET (V_GS(th) = 1–2.5 V) with identical R_DS(on) and package, but BUK7M15-60EX requires higher gate voltage for full enhancement. Swapping requires verifying gate drive capability and re-characterizing switching losses and thermal rise under actual load conditions.