Nexperia USA Inc. BUK7M3R3-40HX

Overview

BUK7M3R3-40HX from Nexperia is an AEC-Q101 qualified N-channel standard-level MOSFET in LFPAK33 (SOT1210) package, featuring 40 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 80 A continuous drain current at T_mb = 25 °C, and Trench 9 superjunction technology for high power density. It serves as a robust low-side switch in 12 V automotive powertrain and body control modules.

For engineers reviewing the BUK7M3R3-40HX datasheet, BUK7M3R3-40HX pinout, BUK7M3R3-40HX application, or BUK7M3R3-40HX equivalent, key selection criteria include its AEC-Q101 qualification at 175 °C, repetitive avalanche rating, gull-wing lead manufacturability, thermal resistance of 1.3 K/W (j-mb), and LFPAK33 mounting base connection to drain.

Technical Context

This MOSFET employs Trench 9 TrenchMOS technology to achieve low R_DS(on) and high power density while maintaining ruggedness. Its LFPAK33 copper clip construction delivers low thermal resistance (R_th(j-mb) = 1.3 K/W) and high mechanical robustness for automotive under-hood environments.

The device features a source-connected triple-pin configuration (Pins 1–3), gate on Pin 4, and drain connected to the exposed mounting base (mb). It supports fast switching with Q_GD = 6.6 nC (typ), t_r = 7.3 ns, and soft reverse recovery (S = 0.68) for reduced EMI in motor drive and DC-DC applications.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, single-ended package with gull-wing leads and an exposed copper mounting base electrically connected to the drain terminal. Its compact 3.2 mm × 2.4 mm footprint and 0.65 mm pitch support high-density automotive PCB layouts and automated optical inspection (AOI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IRL8721PBF, BUK7M3R3-40HX uniquely balances AEC-Q101 qualification, LFPAK33 manufacturability, and optimized dynamic performance-making it the preferred choice for high-reliability, high-volume automotive SMT power switching where thermal, EMI, and supply-chain continuity are critical.

Availability

BUK7M3R3-40HX is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics, and LED lighting systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for BUK7M3R3-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and MOSFET solutions, with leadership in automotive-grade discrete components.

The LFPAK MOSFET product line was engineered specifically for automotive electrification-delivering AEC-Q101 reliability, superior thermal performance, and SMT manufacturability in compact packages like SOT1210.

FAQ

What is the maximum allowable mounting base temperature for continuous operation?

The device supports continuous operation up to T_mb = 100 °C, delivering 80 A at that temperature per Figure 2. Derating begins above 25 °C ambient, with power dissipation dropping to ~50% at T_mb = 100 °C. Thermal design must ensure the mounting base remains within this limit under worst-case load and ambient conditions.

Is the mounting base electrically isolated from other pins?

No-the mounting base (mb) is internally connected to the drain terminal and is not electrically isolated. It must be routed to the drain net on the PCB and thermally coupled to a heatsink or copper pour. Any isolation requires external insulation between the mounting base and heatsink.

Can BUK7M3R3-40HX replace a TO-252 DPAK MOSFET in existing designs?

Yes, with layout adaptation: the LFPAK33 (SOT1210) footprint differs from TO-252 but offers lower R_th(j-mb) and higher current capability. The pinout is incompatible-source/gate/drain assignments differ-and the mounting base requires direct drain routing. A full thermal and electrical validation is required before drop-in replacement.

Does this MOSFET require a gate resistor for automotive ESD robustness?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast edge transitions, especially in noisy automotive environments. While the device has inherent ESD protection (HBM >2 kV), external gate resistance improves system-level EMC immunity and prevents unintended turn-on from coupling.