Nexperia USA Inc. BUK7M4R3-40HX

Overview

BUK7M4R3-40HX from Nexperia is an AEC-Q101 qualified N-channel standard-level MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 95 A continuous drain current at T_mb = 25 °C. It employs Trench 9 superjunction technology and copper-clip LFPAK construction for high power density and robustness in automotive powertrain and body control modules.

For engineers reviewing the BUK7M4R3-40HX datasheet, BUK7M4R3-40HX pinout, BUK7M4R3-40HX application, or BUK7M4R3-40HX equivalent, key selection criteria include its 175 °C junction-rated AEC-Q101 qualification, repetitive avalanche capability, gull-wing lead form for AOI compatibility, and thermal resistance of 1.48 K/W (j-mb), critical for thermally constrained 12 V automotive systems.

Technical Context

This MOSFET uses Trench 9 TrenchMOS technology to achieve low R_DS(on) and high power density while maintaining rugged switching behavior. Its LFPAK33 package integrates a copper clip for low-inductance drain connection and enhanced thermal conduction from die to mounting base.

The device features a fully characterized source-drain diode with soft reverse recovery (S = 0.66 at dI_S/dt = −100 A/µs), 20 nC recovered charge, and 26 ns trr - enabling reliable operation in freewheeling and synchronous rectification roles without external snubbing in DC-DC and motor drive stages.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, single-ended package with gull-wing leads and an exposed copper mounting base electrically connected to the drain. Its 0.65 mm pitch and 3.2 × 2.0 mm footprint support high-density automotive PCB layouts and automated optical inspection (AOI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK7M4R3-40HX delivers optimal balance of low R_DS(on), industry-leading thermal resistance, AEC-Q101 validation, and built-in avalanche ruggedness - making it the preferred choice for space- and reliability-critical 12 V automotive power stages.

Availability

BUK7M4R3-40HX is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics distribution, and LED lighting systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BUK7M4R3-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for automotive, industrial, and consumer applications, delivering high-performance, high-reliability discrete and logic devices.

BUK7M4R3-40HX belongs to Nexperia's AEC-Q101-qualified LFPAK automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where robustness, thermal efficiency, and manufacturing yield are critical.

FAQ

What is the maximum continuous drain current for BUK7M4R3-40HX under real-world PCB conditions?

The datasheet specifies 95 A at T_mb = 25 °C, but this value assumes ideal thermal coupling to an infinite heatsink. In actual automotive PCBs with 2 oz copper and moderate copper pour, sustained current is typically limited to 55–70 A due to mounting base temperature rise. Thermal design must target T_mb ≤ 100 °C to maintain reliability over lifetime.

Does BUK7M4R3-40HX require a gate resistor for driving with a standard 5 V MCU GPIO?

No external gate resistor is required for basic on/off control with a 5 V MCU GPIO, as the device's gate threshold voltage (V_GS(th)) is 1–4.3 V and gate leakage is <100 nA. However, for fast switching (>100 kHz) or noise immunity, a 5–10 Ω series resistor is recommended to dampen ringing and limit peak gate current during transitions.

How does the LFPAK33 package compare to traditional SO-8 in terms of thermal performance?

LFPAK33 delivers 1.48 K/W typical R_th(j-mb), versus ~3.5 K/W for standard SO-8 - more than 2× better thermal conduction. This results from the copper clip connecting die directly to the exposed mounting base, eliminating bond wires and epoxy thermal barriers. The improvement enables higher current density and smaller heatsinks in space-constrained ECUs.

Is the source-drain diode suitable for synchronous rectification in a 12 V buck converter?

Yes - the diode exhibits soft reverse recovery (S = 0.66), 26 ns trr, and 20 nC Q_r, making it suitable for synchronous rectification up to ~300 kHz. Its low forward voltage (~0.83 V at 25 A) further reduces conduction loss. For best efficiency, pair with a gate driver that provides precise dead-time control to avoid shoot-through.