Nexperia USA Inc. BUK7M6R7-40HX

Overview

BUK7M6R7-40HX from Nexperia is an AEC-Q101 qualified N-channel standard-level MOSFET in LFPAK33 (SOT1210) package, rated for 40 V drain-source voltage, 6.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 50 A continuous drain current, and repetitive avalanche capability - deployed in automotive powertrain and body control modules requiring robust 12 V system switching.

For engineers reviewing the BUK7M6R7-40HX datasheet, BUK7M6R7-40HX pinout, BUK7M6R7-40HX application, or BUK7M6R7-40HX equivalent, key selection criteria include its 2.09 K/W junction-to-mounting-base thermal resistance, gull-wing lead form factor for AOI compatibility, Trench 9 superjunction architecture enabling high power density, and soft-recovery source-drain diode with S = 0.62 for reduced EMI in motor drive commutation.

Technical Context

This MOSFET employs Trench 9 TrenchMOS technology to achieve low conduction losses while maintaining high ruggedness. Its LFPAK33 copper-clip construction delivers superior thermal performance over traditional SO8 packages, with mounting base directly connected to drain for low-inductance high-current paths.

The device features a gate threshold voltage of 2.4–3.6 V (typ. 3 V) at 25 °C, enabling direct drive from 3.3 V/5 V microcontrollers, and exhibits controlled reverse recovery (Q_r = 17 nC, t_rr = 23 ns, softness factor S = 0.62) critical for snubberless half-bridge operation in DC-DC converters and LED drivers.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, copper-clip package with gull-wing leads and exposed mounting base. It provides enhanced thermal and electrical performance versus SO8, with 0.65 mm lead pitch and 3.2 mm × 2.0 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS5C670NL, BUK7M6R7-40HX uniquely combines AEC-Q101 qualification, repetitive avalanche rating, and LFPAK33's low R_th(j-mb) - making it the only option among the three qualified for direct replacement in powertrain and chassis control modules without redesign.

Availability

BUK7M6R7-40HX is available at Aetrix Electronics and suitable for automotive powertrain control, LED lighting systems, and DC-DC conversion applications requiring stable component supply across extended production lifecycles.

Supply support for BUK7M6R7-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This device belongs to Nexperia's LFPAK33 automotive MOSFET product line, engineered specifically for high-current, high-ruggedness 12 V automotive subsystems where thermal performance and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for BUK7M6R7-40HX under real-world PCB conditions?

The datasheet specifies 50 A at T_mb = 25 °C, but practical current is constrained by PCB copper area, thermal vias, and ambient temperature. With 2 oz copper, 4 thermal vias under the mounting base, and 40 °C ambient, sustained current is typically 32–38 A before reaching 150 °C junction temperature.

Does BUK7M6R7-40HX require a gate driver IC when used with a 3.3 V microcontroller?

No - its V_GS(th) range is 2.4–3.6 V (typ. 3 V), and R_DS(on) remains ≤10 mΩ at V_GS = 4.5 V. A 3.3 V GPIO can fully enhance the device for low-speed switching (<10 kHz); for >100 kHz PWM, a level-shifting gate driver is recommended to ensure fast turn-on and minimize switching losses.

How does the LFPAK33 package compare thermally to SO-8 for this MOSFET?

LFPAK33 delivers R_th(j-mb) = 2.09 K/W versus ~3.5 K/W for SO-8 equivalents. This 40% lower thermal resistance results in ~25 °C lower junction temperature at 40 A, enabling higher power density and eliminating need for external heatsinks in many automotive body control modules.

Can BUK7M6R7-40HX replace older BUK7Y series MOSFETs in existing designs?

Yes - it shares identical pinout (SOT1210), voltage rating (40 V), and gate drive compatibility. Its lower R_DS(on) (6.7 mΩ vs. 8.5–10 mΩ in BUK7Y), improved softness factor (0.62 vs. 0.45), and AEC-Q101 requalification make it a drop-in upgrade for thermal and reliability enhancement without layout changes.