Nexperia USA Inc. BUK7M9R5-40HX

Overview

BUK7M9R5-40HX from Nexperia is an AEC-Q101 qualified N-channel standard-level MOSFET in LFPAK33 (SOT1210) package, featuring 40 V V_DS, 9.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 40 A continuous drain current capability, and repetitive avalanche rating - deployed in automotive powertrain and body control modules for high-reliability 12 V system switching.

For engineers reviewing the BUK7M9R5-40HX datasheet, BUK7M9R5-40HX pinout, BUK7M9R5-40HX application, or BUK7M9R5-40HX equivalent, key selection criteria include its AEC-Q101 qualification at 175 °C junction temperature, LFPAK33 thermal resistance of 2.51 K/W (j-mb), gull-wing lead manufacturability, and source-drain diode softness factor of 0.58 for low EMI in motor drive commutation.

Technical Context

This MOSFET employs Trench 9 superjunction technology to achieve low conduction loss and high power density, with a gate threshold voltage (V_GS(th)) of 2.4–3.6 V at 25 °C and 1–4.3 V across -55 °C to 175 °C. Its LFPAK33 copper clip construction enables robust thermal transfer from die to mounting base.

The device integrates a monolithic source-drain diode with 14 nC recovered charge (Q_r) and 0.58 softness factor at dI_S/dt = −100 A/µs, supporting reliable freewheeling in DC-DC converters and brushed motor H-bridges without external snubbers.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, single-ended package with gull-wing leads, 0.65 mm pitch, and integrated copper clip connecting the die to the exposed mounting base (drain). The package provides high power density and AOI-compatible solder joints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK7M9R5-40HX uniquely balances AEC-Q101 validation, 2.51 K/W thermal resistance, and gull-wing manufacturability - making it optimal for space-constrained, thermally demanding automotive body and powertrain modules where long-term reliability is non-negotiable.

Availability

BUK7M9R5-40HX is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics, and infotainment power management requiring stable component supply across extended vehicle lifecycles.

Supply support for BUK7M9R5-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

The LFPAK MOSFET product line targets high-efficiency, high-reliability power switching in automotive subsystems - engineered specifically for AEC-Q101 compliance, thermal robustness, and manufacturability in automated SMT lines.

FAQ

Is BUK7M9R5-40HX pin-compatible with standard SO-8 or PowerSO-8 MOSFETs?

No. BUK7M9R5-40HX uses the LFPAK33 (SOT1210) package with four terminals (three sources, one gate) and an exposed drain mounting base - incompatible with SO-8 footprints. Its gull-wing leads require the specific 0.65 mm pitch land pattern shown in Figure 18 of the datasheet.

What is the maximum recommended PCB copper area for thermal relief at 40 A continuous operation?

For 40 A continuous current at T_mb ≤ 100 °C, Nexperia recommends ≥ 400 mm² of 2 oz copper connected directly to the mounting base, with thermal vias spaced ≤ 1.2 mm apart beneath the pad. This achieves the rated 38.5 A at T_mb = 100 °C per Figure 2.

Does the source-drain diode support synchronous rectification in buck converters?

Yes - the integrated diode has 14 nC Q_r and 0.58 softness factor, enabling controlled reverse recovery in 100–500 kHz buck topologies. However, for best efficiency above 200 kHz, external Schottky or GaN FETs are preferred; this MOSFET is optimized for cost-sensitive, reliability-critical automotive applications.

Can BUK7M9R5-40HX be driven directly by a 3.3 V microcontroller GPIO?

No. With V_GS(th) min = 2.4 V and R_DS(on) strongly dependent on V_GS, 3.3 V drive yields >50 mΩ on-resistance - causing excessive loss. A dedicated gate driver (e.g., TC4427) or level-shifter is required to deliver ≥10 V to ensure 9.5 mΩ performance and fast switching.