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Nexperia USA Inc. BUK7S0R9-40HJ

Part No.:
BUK7S0R9-40HJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1235
Datasheet:
AetrixBUK7S0R9-40HJ.pdf
Description:
MOSFET N-CH 40V 375A LFPAK88
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,792

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Product details

Overview

BUK7S0R9-40HJ from Nexperia is an automotive-qualified N-channel MOSFET using Trench 9 superjunction technology in LFPAK88 (SOT1235) package, rated for 40 V VDS, 0.9 mΩ RDS(on) at 10 V VGS, and 375 A continuous drain current at Tmb = 25 °C - deployed in high-power 12 V/48 V automotive power switching, reverse polarity protection, and motor control.

For engineers reviewing the BUK7S0R9-40HJ datasheet, BUK7S0R9-40HJ pinout, BUK7S0R9-40HJ application, or BUK7S0R9-40HJ equivalent, this page delivers verified electrical specs, thermal resistance (Rth(j-mb) = 0.35 K/W), gate charge (QG(tot) = 118–166 nC), avalanche energy (631 mJ), and LFPAK88 mounting base layout guidance.

Technical Context

This MOSFET employs Trench 9 superjunction architecture to achieve sub-1 mΩ on-resistance in a compact 8 mm × 8 mm footprint, with tight VGS(th) limits (2.4–3.6 V at 25 °C) enabling stable parallel operation. Its copper-clip LFPAK88 construction reduces source inductance and thermal resistance versus wire-bonded D²PAK alternatives.

The device supports ultra-high-current switching up to 1749 A peak (IDM) and delivers robust unclamped avalanche ruggedness (631 mJ at Tj(init) = 25 °C), validated across -55 °C to +175 °C junction temperature range per AEC-Q101 extended qualification.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage for 12 V/48 V automotive bus-side switching.
RDS(on) 0.73 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 150 A, critical for thermally constrained modules.
ID cont. 375 A @ Tmb = 25 °C - Demonstrated continuous current capability; limited in practice by PCB copper area and heatsinking.
Rth(j-mb) 0.35 K/W typ - Junction-to-mounting-base thermal resistance enables direct thermal coupling to heatsink without thermal pad compromise.
QG(tot) 118–166 nC - Total gate charge determines driver strength requirement; low QGD/QG ratio improves switching efficiency.
EAS 631 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load turn-off transients in motor/solenoid control.
VGS(th) 2.4–3.6 V @ Tj = 25 °C - Tight threshold distribution simplifies gate drive design and supports stable multi-device paralleling.

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead surface-mount copper-clip package measuring 8.0 mm × 8.0 mm × 1.6 mm, featuring gull-wing leads for board-level reliability and a thermally enhanced mounting base electrically connected to the drain terminal.

Pin/Terminal Circuit Role Design Meaning
1 G Gate input - Low-inductance connection optimized for fast, oscillation-free switching with minimal external gate resistor.
2 S Source - Internally tied to pins 2, 3, and 4; forms low-impedance return path for high di/dt currents.
3 S Source - Parallel source terminals reduce package source inductance below 1 nH, improving EMI and SOA margin.
4 S Source - Triple-source configuration enhances current spreading and thermal uniformity across die surface.
mb D Mounting base / Drain - Exposed copper base serves as primary drain terminal and thermal interface to heatsink or PCB copper pour.

Key Features

Feature Design Value
AEC-Q101 qualified beyond standard requirements Rated for -55 °C to +175 °C operation - Validated for under-hood automotive environments with no derating needed up to max Tj.
LFPAK88 copper-clip construction Reduces RDS(on) by ~25% and Rth(j-mb) by ~40% vs. equivalent D²PAK - Enables smaller heatsinks and higher power density.
Trench 9 superjunction cell architecture 0.9 mΩ max RDS(on) in 8 mm × 8 mm footprint - Achieves 3× lower on-resistance than prior-gen TrenchMOS at same voltage class.
Gull-wing lead form factor Enables AOI-compatible solder inspection and absorbs >1000 thermal cycles - Eliminates need for X-ray and improves field-reliability in vibration-prone systems.
Tight VGS(th) distribution (±0.6 V) Supports direct paralleling of ≥4 devices without current-sharing resistors - Reduces system-level component count and layout complexity.

Applications

12 V Automotive Power Distribution 48 V DC/DC Converter Secondary Side

Use Scenario: High-current battery disconnect and load-dump protection in ADAS ECUs and body control modules.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V rail integrity during fault conditions; operates in linear and saturated modes.

Use Value: 375 A continuous rating and 631 mJ avalanche energy ensure survival during ISO 7637-2 pulse 5a/b transients without external snubbers.

Use Scenario: Synchronous rectification on secondary side of 48 V–12 V bidirectional DC/DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-loss freewheeling switch operating at 100–300 kHz with fast recovery diode (trr = 48 ns).

Use Value: 0.73 mΩ RDS(on) minimizes conduction loss at 200+ A output, while low QGD (20–40 nC) enables efficient high-frequency ZVS operation.

High-Power Motor & Solenoid Control Reverse Polarity Protection

Use Scenario: Gate driving of brushed DC motors and hydraulic solenoids in electric power steering and brake-by-wire actuators.

IC Role / Device Role / Timing Role: H-bridge high-side or low-side switch handling repetitive 1749 A peak currents during stall conditions.

Use Value: Robust SOA and 175 °C Tj rating allow sustained overcurrent operation without thermal shutdown, reducing need for redundant sensing.

Use Scenario: Input protection for infotainment head units and telematics modules against battery reversal during service or jump-start events.

IC Role / Device Role / Timing Role: Low-forward-drop series switch placed between battery and system input, conducting only when polarity is correct.

Use Value: Ultra-low RDS(on) (0.73 mΩ) limits forward voltage drop to <150 mV at 200 A - avoids power loss and heat buildup in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 0.75 mΩ RDS(on), PowerFLAT 8×8 package, non-automotive grade Lacks AEC-Q101 qualification and extended temperature support; not approved for safety-critical automotive use Select only for industrial or consumer applications where automotive qualification is unnecessary.
Infineon IPP026N04LG 40 V, 0.26 mΩ RDS(on), TO-263 package, AEC-Q101 qualified Larger TO-263 footprint (10.3 mm × 15.6 mm) and higher Rth(j-mb) (0.55 K/W) limit power density and thermal performance Prefer when legacy TO-263 layout compatibility is required, but expect 30% larger PCB area and reduced current density.

Compared with STL220N4F7AG, BUK7S0R9-40HJ adds full automotive qualification and thermal robustness; compared with IPP026N04LG, it trades slightly higher RDS(on) for 35% smaller footprint and 36% lower thermal resistance - optimizing space-constrained, high-reliability automotive modules.

Availability

BUK7S0R9-40HJ is available at Aetrix Electronics and suitable for 12 V automotive power distribution, 48 V DC/DC converter secondary-side synchronous rectification, and high-power motor control requiring stable component supply across production lifecycles.

Supply support for BUK7S0R9-40HJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

BUK7S0R9-40HJ belongs to Nexperia's LFPAK88 automotive MOSFET product line, engineered specifically for high-current, high-reliability power switching in thermally demanding vehicle subsystems.

FAQ

What is the maximum continuous drain current for BUK7S0R9-40HJ at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is derated to approximately 220 A, based on the normalized power dissipation curve in Figure 2 of the datasheet. This reflects thermal limitation of the PCB copper and heatsink interface, not intrinsic device failure.

Does BUK7S0R9-40HJ include an integrated body diode, and what are its key recovery characteristics?

Yes, it features a monolithic source-drain diode with 60 nC recovered charge (Qr) and 48 ns reverse recovery time (trr) at IS = 25 A, dIS/dt = −100 A/µs, and Tj = 25 °C. Its softness factor of 0.78 minimizes voltage overshoot during commutation.

Can BUK7S0R9-40HJ be used in parallel configurations, and what design considerations apply?

Yes - its tightly controlled VGS(th) (2.4–3.6 V) and matched RDS(on) enable stable current sharing. Use symmetrical PCB layout, individual gate resistors (≤5 Ω), and Kelvin source connections to avoid imbalance; no external current-sense resistors are required.

What is the recommended reflow profile and solder land pattern for LFPAK88 (SOT1235) mounting?

Follow JEDEC J-STD-020D for lead-free reflow: peak temperature 260 °C, time above 217 °C ≤ 60 s. Use the footprint in Figure 18: 7.8 mm × 5.7 mm thermal pad with four 1.3 mm × 1.15 mm solder lands and 0.125 mm stencil thickness for optimal void control and mechanical reliability.

BUK7S0R9-40HJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-1235
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
375A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
166 nC @ 32 V
Vgs (Max):
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
12888 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK88 (SOT1235)

BUK7S0R9-40HJ FAQ

1.How can I place an order for BUK7S0R9-40HJ through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7S0R9-40HJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7S0R9-40HJ reliable?

The price and inventory of BUK7S0R9-40HJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7S0R9-40HJ is usually 5 days.

3.What payment methods are accepted for BUK7S0R9-40HJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7S0R9-40HJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7S0R9-40HJ?

BUK7S0R9-40HJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7S0R9-40HJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7S0R9-40HJ?

For technical support, including BUK7S0R9-40HJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7S0R9-40HJ requirements.

6.How does Aetrix verify that BUK7S0R9-40HJ is sourced from the original manufacturer or authorized distributors?

All BUK7S0R9-40HJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7S0R9-40HJ meets industry standards.

7.What is the process for return or replacement of BUK7S0R9-40HJ?

All BUK7S0R9-40HJ units undergo pre-shipment inspection (PSI). If there is an issue with BUK7S0R9-40HJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7S0R9-40HJ part is unused and in its original packaging.

Return procedure for BUK7S0R9-40HJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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