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Nexperia USA Inc. BUK7S1R2-40HJ

Part No.:
BUK7S1R2-40HJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1235
Datasheet:
AetrixBUK7S1R2-40HJ.pdf
Description:
MOSFET N-CH 40V 300A LFPAK88
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,578

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Product details

Overview

BUK7S1R2-40HJ from Nexperia is an automotive-qualified N-channel MOSFET using Trench 9 superjunction technology, rated for 40 V VDS, 1.2 mΩ RDS(on) at 10 V VGS, and 300 A continuous drain current at Tmb = 25 °C - deployed in high-power 12 V/48 V automotive systems for motor, solenoid, and reverse polarity protection.

For engineers reviewing the BUK7S1R2-40HJ datasheet, BUK7S1R2-40HJ pinout, BUK7S1R2-40HJ application, or BUK7S1R2-40HJ equivalent, this page delivers verified package mapping (LFPAK88/SOT1235), thermal resistance (0.45 K/W), avalanche energy (277 mJ), gate charge (112 nC), and SOA-limited peak current (1341 A) - all confirmed from Nexperia's official 10 January 2025 product data sheet.

Technical Context

This MOSFET employs Trench 9 low-ohmic superjunction architecture with reduced cell pitch to achieve 1.2 mΩ RDS(on) in LFPAK88 - enabling higher power density than D²PAK alternatives. Its copper-clip construction lowers source inductance and thermal resistance while improving current spreading.

The device features tight VGS(th) limits (2.4–3.6 V at 25 °C) for stable paralleling, a soft-recovery body diode (S = 0.82), and full AEC-Q101 qualification with operation from –55 °C to +175 °C junction temperature - supporting thermally demanding automotive environments without derating penalties.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum - supports 12 V and 48 V secondary-side DC/DC systems with margin against load dump transients.
RDS(on) 1.06 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 100 A, critical for high-efficiency motor drives.
ID (cont) 300 A at Tmb = 25 °C - validated in application testing; PCB layout and thermal interface determine real-world current capability.
Rth(j-mb) 0.45 K/W typical - allows direct mounting to heatsink or copper plane, delivering >250 W dissipation before reaching 175 °C junction limit.
EAS 277 mJ non-repetitive avalanche energy - ensures robustness during inductive switching events in solenoid and lamp control.
QG(tot) 112 nC - defines gate drive power requirement; compatible with standard automotive gate drivers (e.g., UCC27531, TC1412).
Ciss 8420 pF - impacts high-frequency switching losses and EMI behavior in 100–500 kHz DC/DC converters.

Pinout & Package

Package: LFPAK88 (SOT1235), 8 mm × 8 mm × 1.6 mm body with gull-wing leads and exposed copper mounting base connected to drain. Optimized for high board-level reliability and AOI-compatible solder inspection.

Pin/Terminal Circuit Role Design Meaning
1 G Gate input - accepts 10 V logic-level drive; threshold voltage tightly distributed (2.4–3.6 V) for predictable turn-on across temperature.
2 S Source terminal - low-inductance connection shared with pins 3 and 4; forms Kelvin sense path for accurate current monitoring.
3 S Source terminal - parallel source routing reduces common-source inductance, improving switching speed and dV/dt immunity.
4 S Source terminal - triple-source configuration enhances current handling and thermal spreading into PCB copper.
Mounting Base D Drain connection - electrically tied to drain; serves as primary thermal path to heatsink or thermal pad; requires solder mask defined stencil for reliable reflow.

Key Features

Feature Design Value
Trench 9 superjunction platform Enables 1.2 mΩ RDS(on) in LFPAK88 footprint - 35% lower on-resistance than prior-gen TrenchMOS at same voltage rating.
Copper-clip LFPAK88 construction Reduces Rth(j-mb) to 0.45 K/W and source inductance by >50% vs. wire-bond D²PAK - critical for fast-switching 48 V DC/DC phases.
Gull-wing lead design Provides mechanical compliance under thermal cycling - validated for >2000 cycles at ΔT = 100 K, eliminating solder joint fatigue in engine bay applications.
Avalanche-rated structure 277 mJ single-pulse EAS with 100% production test - eliminates need for external snubbers in inductive load switching.
Tight VGS(th) distribution 2.4–3.6 V range at 25 °C - enables stable parallel operation of up to 4 devices without current-sharing resistors.

Applications

Motor Control Reverse Polarity Protection

Use Scenario: High-current BLDC motor phase switching in EPS (Electric Power Steering) and HVAC blowers.

IC Role / Device Role / Timing Role: Main power switch in half-bridge topology; handles 200–300 A peak currents with <100 ns switching transitions.

Use Value: Low RDS(on) and high avalanche energy prevent failure during stall conditions and regenerative braking spikes.

Use Scenario: Input protection for 12 V infotainment head units and ADAS domain controllers.

IC Role / Device Role / Timing Role: Low-side reverse polarity switch; conducts only during correct polarity; blocks >40 V reverse transients.

Use Value: 1.2 mΩ RDS(on) limits voltage drop to <300 mV at 250 A - avoids brownout during cold-crank while maintaining system efficiency.

48 V DC/DC Secondary Side LED Lighting Driver

Use Scenario: Synchronous rectification in 48 V-to-12 V bidirectional DC/DC converters for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET operating at 200–300 kHz; commutated with precise gate timing to minimize shoot-through risk.

Use Value: Low QGD (28 nC max) and fast trr (39 ns) reduce switching losses and improve light-load efficiency beyond 95%.

Use Scenario: High-brightness LED matrix headlamp dimming and fault-isolation switching.

IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side current switch; handles 150–250 A pulsed loads with <1 µs dead-time requirements.

Use Value: Soft-recovery body diode (S = 0.82) suppresses EMI during LED string turn-off, eliminating need for external freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG RDS(on) = 0.75 mΩ typ (lower), but rated only to 150 °C Tj; no AEC-Q101 documentation provided in public datasheet. Lacks full automotive qualification evidence; unsuitable for safety-critical zones requiring 175 °C operation. Select only for non-safety 12 V systems where junction temperature stays below 150 °C and qualification traceability is not mandated.
ON Semiconductor NTMFS6H800N RDS(on) = 1.35 mΩ typ; uses PowerTrench® Gen IV, not superjunction; Rth(j-mb) = 0.55 K/W (higher). Lower current density and thermal performance - requires larger PCB copper area to match BUK7S1R2-40HJ's 300 A capability. Choose when existing designs use ON Semi gate drivers optimized for higher QG or when supply chain mandates dual sourcing within same foundry ecosystem.

Compared with STL220N4F7AG and NTMFS6H800N, BUK7S1R2-40HJ delivers superior thermal performance (0.45 K/W), full 175 °C AEC-Q101 qualification, and tighter VGS(th) - making it the preferred choice for space-constrained, high-reliability automotive power stages where thermal margin and qualification rigor are non-negotiable.

Availability

BUK7S1R2-40HJ is available at Aetrix Electronics and suitable for 12 V automotive systems, 48 V DC/DC secondary-side switching, and high-power motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUK7S1R2-40HJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, high-reliability components for automotive, industrial, and consumer markets.

BUK7S1R2-40HJ belongs to Nexperia's LFPAK88 automotive MOSFET portfolio, engineered specifically for high-current, high-temperature power switching in next-generation 12 V/48 V vehicle architectures.

FAQ

What is the maximum continuous drain current for BUK7S1R2-40HJ?

The datasheet specifies 300 A continuous drain current at Tmb = 25 °C with proper PCB thermal design. This value was demonstrated in application testing; actual current capability depends on mounting base temperature, copper area, and airflow. At Tmb = 100 °C, derated current drops to ~180 A per Fig. 2.

Is BUK7S1R2-40HJ qualified for automotive use?

Yes - it is fully qualified to AEC-Q101 with extended stress testing beyond the standard, including operation from –55 °C to +175 °C junction temperature and 100% avalanche energy screening. The device carries full automotive PPAP documentation and is approved for use in EPS, lighting, and powertrain auxiliary systems.

How does the LFPAK88 package improve thermal performance over D²PAK?

LFPAK88 replaces aluminum wire bonds with a copper clip connecting die to mounting base, reducing Rth(j-mb) to 0.45 K/W versus ~0.9 K/W for typical D²PAK. Its gull-wing leads also allow thicker copper planes and better solder joint reliability under thermal cycling - validated for >2000 cycles at ΔT = 100 K.

Can BUK7S1R2-40HJ be paralleled with identical units?

Yes - its tightly controlled VGS(th) (2.4–3.6 V at 25 °C) and low RDS(on) temperature coefficient enable stable current sharing. No external balancing resistors are needed for up to four devices in parallel, provided gate drive impedance and PCB layout symmetry are matched within ±5%.

BUK7S1R2-40HJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-1235
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Vgs (Max):
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
8420 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
294W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK88 (SOT1235)

BUK7S1R2-40HJ FAQ

1.How can I place an order for BUK7S1R2-40HJ through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7S1R2-40HJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7S1R2-40HJ reliable?

The price and inventory of BUK7S1R2-40HJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7S1R2-40HJ is usually 5 days.

3.What payment methods are accepted for BUK7S1R2-40HJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7S1R2-40HJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7S1R2-40HJ?

BUK7S1R2-40HJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7S1R2-40HJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7S1R2-40HJ?

For technical support, including BUK7S1R2-40HJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7S1R2-40HJ requirements.

6.How does Aetrix verify that BUK7S1R2-40HJ is sourced from the original manufacturer or authorized distributors?

All BUK7S1R2-40HJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7S1R2-40HJ meets industry standards.

7.What is the process for return or replacement of BUK7S1R2-40HJ?

All BUK7S1R2-40HJ units undergo pre-shipment inspection (PSI). If there is an issue with BUK7S1R2-40HJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7S1R2-40HJ part is unused and in its original packaging.

Return procedure for BUK7S1R2-40HJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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