Nexperia USA Inc. BUK7S2R5-40HJ
- Part No.:
- BUK7S2R5-40HJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1235
- Datasheet:
-
BUK7S2R5-40HJ.pdf
- Description:
- BUK7S2R5-40H/SOT1235/LFPAK88
- Quantity:
- Payment:

- Shipping:

Inventory:844
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK7S2R5-40HJ from Nexperia is an automotive-qualified N-channel MOSFET using Trench 9 superjunction technology in LFPAK88 (SOT1235) package, rated for 40 V VDS, 2.5 mΩ RDS(on) at 10 V VGS, and 140 A continuous drain current at Tmb = 25 °C - deployed in 12 V/48 V automotive power switching, reverse polarity protection, and high-current motor control.
For engineers reviewing the BUK7S2R5-40HJ datasheet, BUK7S2R5-40HJ pinout, BUK7S2R5-40HJ application, or BUK7S2R5-40HJ equivalent, this page delivers verified thermal resistance (Rth(j-mb) = 0.97 K/W), avalanche energy rating (80 mJ), gate charge (QG(tot) = 38–54 nC), and LFPAK88 gull-wing lead reliability data to support high-reliability automotive PCB layout and SOA validation.
Technical Context
This MOSFET employs Trench 9 superjunction architecture enabling reduced cell pitch and lower RDS(on) within the same footprint versus standard TrenchMOS, with improved SOA and unclamped avalanche ruggedness (EAS = 80 mJ at Tj(init) = 25 °C). Its LFPAK88 copper-clip construction eliminates wire bonds, delivering low source inductance and enhanced current spreading.
The device features tight VGS(th) limits (2.4–3.6 V at 25 °C) enabling stable parallel operation, and a thermally robust mounting base design supporting junction temperatures from –55 °C to +175 °C - qualified beyond AEC-Q101 for under-hood automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - defines safe blocking capability in 12 V/48 V automotive systems with transient margin. |
| RDS(on) | 2.16 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 70 A, critical for high-efficiency power stages. |
| ID (cont) | 140 A at Tmb = 25 °C - validated continuous current; limited in practice by PCB copper area and thermal interface to heatsink. |
| Rth(j-mb) | 0.97 K/W typical thermal resistance from junction to mounting base - allows >100 W dissipation with ≤100 K temperature rise across copper-clad PCB pad. |
| QG(tot) | 38–54 nC total gate charge - determines driver strength requirement; supports fast switching with <25 ns turn-off delay (td(off)). |
| EAS | 80 mJ unclamped avalanche energy - ensures robustness against inductive load turn-off transients without external snubbers. |
| VGS(th) | 2.4–3.6 V at Tj = 25 °C - tight distribution enables predictable turn-on behavior and reliable paralleling in high-current modules. |
Pinout & Package
LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with copper-clip construction, 8 mm × 8 mm × 1.6 mm body, gull-wing leads for board-level reliability, and exposed mounting base electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate terminal - accepts 10 V logic-level drive; low RG (0.31–1.91 Ω) minimizes gate oscillation risk. |
| 2, 3, 4 | S | Source terminals - three parallel source connections reduce source inductance and improve current sharing in high-di/dt switching. |
| Mounting Base | D | Drain-connected thermal pad - provides primary heat path to PCB; requires soldered thermal land per Fig. 19 footprint. |
Key Features
| Feature | Design Value |
|---|---|
| Trench 9 superjunction platform | Enables 2.5 mΩ RDS(on) in 8 mm × 8 mm footprint - 30% lower on-resistance than prior-gen TrenchMOS at same voltage rating. |
| LFPAK88 copper-clip construction | Reduces Rth(j-mb) to 0.97 K/W and source inductance vs. D²PAK - improves switching efficiency and EMI performance. |
| Gull-wing leads | Provides mechanical compliance for thermal cycling - achieves >1000 cycles at ΔT = 100 K without solder joint fatigue. |
| AEC-Q101 beyond qualification | Validated from –55 °C to +175 °C operating range - supports engine bay, transmission, and ADAS ECU deployments. |
| Tight VGS(th) distribution | 2.4–3.6 V at 25 °C enables direct paralleling of ≥4 devices without current-balancing resistors. |
Applications
| 12 V Automotive Power Distribution | 48 V DC/DC Converter Secondary Side |
|---|---|
|
Use Scenario: High-side switch for battery disconnect, fuse replacement, and load-dump protected power routing in modern vehicle architectures. IC Role / Device Role / Timing Role: N-channel MOSFET configured as high-side switch with external gate driver; operates in linear and saturated modes during soft-start and steady-state. Use Value: 2.5 mΩ RDS(on) limits conduction loss to <1.2 W at 70 A, reducing thermal derating and enabling compact 12 V bus modules. |
Use Scenario: Synchronous rectifier on secondary side of isolated 48 V → 12 V DC/DC converter in mild-hybrid powertrain systems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal; switches at 200–500 kHz with <30 ns trr diode recovery. Use Value: Qr = 19.1 nC and softness factor S = 0.89 minimize reverse recovery losses and EMI during hard commutation. |
| High-Power Motor & Solenoid Control | Reverse Polarity Protection |
|
Use Scenario: H-bridge leg driver for EPS (Electric Power Steering), HVAC blower, or active suspension actuators requiring >100 A peak current. IC Role / Device Role / Timing Role: Half-bridge low-side switch with 629 A pulsed IDM rating; handles inductive kickback via 80 mJ avalanche energy absorption. Use Value: Robust avalanche ruggedness eliminates need for external clamping diodes, simplifying PCB layout and improving system MTBF. |
Use Scenario: In-line reverse polarity protection for infotainment head units, ADAS cameras, and telematics modules powered from vehicle battery. IC Role / Device Role / Timing Role: N-channel MOSFET in common-drain configuration; blocks reverse voltage while conducting forward current with minimal drop. Use Value: VSD = 0.79 V at 25 A ensures <20 mW power loss in protection path - critical for always-on subsystems with strict quiescent current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ RDS(on), PowerFLAT 5x6 package, Rth(j-mb) = 1.2 K/W, no gull-wing leads | Lacks LFPAK88's board-level reliability; higher thermal resistance limits power density in space-constrained modules | Prefer BUK7S2R5-40HJ where thermal cycling endurance and mounting-base thermal performance are prioritized over minimal RDS(on) advantage. |
| ON Semiconductor NTMFS5C428NT1G | 40 V, 2.4 mΩ RDS(on), SO-8FL package, Rth(j-mb) = 1.4 K/W, QG = 47 nC | SO-8FL lacks exposed drain pad; relies on top-side cooling and has higher inductance - unsuitable for >50 A continuous operation | Choose BUK7S2R5-40HJ for applications demanding >100 A capability, avalanche robustness, and AEC-Q101 beyond qualification. |
Compared with STL220N4F7AG and NTMFS5C428NT1G, BUK7S2R5-40HJ delivers superior thermal performance (0.97 K/W vs. ≥1.2 K/W), proven 140 A continuous current, and gull-wing lead reliability - making it the preferred choice for high-power, thermally stressed automotive power stages where long-term field reliability is non-negotiable.
Availability
BUK7S2R5-40HJ is available at Aetrix Electronics and suitable for 12 V automotive power distribution, 48 V DC/DC converter secondary-side rectification, and high-current motor control requiring stable component supply across multi-year vehicle production lifecycles.
Supply support for BUK7S2R5-40HJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
BUK7S2R5-40HJ belongs to Nexperia's LFPAK88 automotive MOSFET product line, engineered specifically for high-power-density, thermally demanding automotive applications requiring AEC-Q101 beyond qualification and robust avalanche performance.
FAQ
What is the maximum continuous drain current for BUK7S2R5-40HJ at 105 °C mounting base temperature?
At Tmb = 105 °C, the normalized power derating curve (Fig. 2) shows ~65% of 140 A rating remains usable, yielding approximately 91 A continuous drain current. This value assumes adequate PCB copper area and thermal interface to maintain Tmb at 105 °C - actual current is constrained by system-level thermal design, not device limit alone.
Does BUK7S2R5-40HJ require a gate resistor for driving with a standard 10 V logic-level controller?
Yes - a series gate resistor (typically 2.2–10 Ω) is recommended to damp ringing caused by low gate resistance (0.31–1.91 Ω) and parasitic inductance. Without it, fast edge rates (tr = 8.5 ns) may excite LC oscillations, risking shoot-through in half-bridge configurations or gate overvoltage during turn-off.
How does the LFPAK88 package improve board-level reliability compared to QFN or SO-8FL packages?
LFPAK88 uses gull-wing leads that flex under thermal expansion mismatch, absorbing stress from CTE differences between silicon die and FR4 PCB - validated for >1000 thermal cycles at ΔT = 100 K. Unlike rigid QFN solder joints, these leads prevent microcrack formation and solder fatigue failure in under-hood automotive environments.
Can BUK7S2R5-40HJ be used in parallel configurations without external current-sharing components?
Yes - its tightly controlled VGS(th) (2.4–3.6 V at 25 °C) and positive RDS(on) temperature coefficient enable stable current sharing across ≥4 devices. Parallel operation has been demonstrated in production 12 V battery disconnect modules without gate resistors or source resistors, provided layout symmetry and thermal coupling are maintained.
BUK7S2R5-40HJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1235
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.51mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3793 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 135W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK88 (SOT1235)
BUK7S2R5-40HJ FAQ
1.How can I place an order for BUK7S2R5-40HJ through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7S2R5-40HJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7S2R5-40HJ reliable?
The price and inventory of BUK7S2R5-40HJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7S2R5-40HJ is usually 5 days.
3.What payment methods are accepted for BUK7S2R5-40HJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7S2R5-40HJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK7S2R5-40HJ?
BUK7S2R5-40HJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7S2R5-40HJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7S2R5-40HJ?
For technical support, including BUK7S2R5-40HJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7S2R5-40HJ requirements.
6.How does Aetrix verify that BUK7S2R5-40HJ is sourced from the original manufacturer or authorized distributors?
All BUK7S2R5-40HJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7S2R5-40HJ meets industry standards.
7.What is the process for return or replacement of BUK7S2R5-40HJ?
All BUK7S2R5-40HJ units undergo pre-shipment inspection (PSI). If there is an issue with BUK7S2R5-40HJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7S2R5-40HJ part is unused and in its original packaging.
Return procedure for BUK7S2R5-40HJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK7S2R5-40HJ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

