Nexperia USA Inc. BUK7Y07-30B,115
- Part No.:
- BUK7Y07-30B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK7Y07-30B,115.pdf
- Description:
- MOSFET N-CH 30V 75A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:7,269
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Product details
Overview
BUK7Y07-30B from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature, designed for automotive-critical 12 V power switching applications including motors, lamps, and solenoids.
For engineers reviewing the BUK7Y07-30B datasheet, BUK7Y07-30B pinout, BUK7Y07-30B application, or BUK7Y07-30B equivalent, key selection criteria include RDS(on) = 5 mΩ @ 10 V/25 A/25 °C, avalanche energy rating of 198 mJ, thermal resistance Rth(j-mb) = 1.42 K/W, and AEC-Q101 qualification for automotive reliability.
Technical Context
This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low conduction losses and robust thermal performance. Its standard-level gate drive compatibility (VGS(th) = 2–4 V, max 10 V logic-level compatible) enables direct interfacing with microcontrollers and discrete drivers without level-shifting.
The LFPAK package integrates a thermally optimized mounting base connected to the drain, enabling high-power dissipation (Ptot = 105 W @ Tmb = 25 °C) and unclamped avalanche ruggedness up to 198 mJ - critical for inductive load switching in automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 12 V automotive systems with transient overvoltage margin. |
| ID (continuous) | 75 A @ Tmb = 25 °C - Package-limited current handling; derates to 63 A at Tmb = 100 °C for sustained thermal operation. |
| RDS(on) | 5 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.25 W conduction loss at 25 A, reducing heatsink requirements. |
| EAS | 198 mJ - Non-repetitive unclamped avalanche energy; supports reliable switching of inductive loads like fuel injectors and fan motors without external snubbers. |
| Rth(j-mb) | 1.42 K/W - Junction-to-mounting-base thermal resistance; allows efficient heat transfer to PCB copper or heatsink, enabling high-power density layouts. |
| QGD | 10.7 nC - Gate-drain charge; determines Miller plateau duration and influences switching speed and gate driver sizing for 100 kHz-class PWM. |
| VGS(th) | 2–4 V @ ID = 1 mA - Threshold voltage range ensures turn-on with standard 3.3 V/5 V logic while maintaining noise immunity at elevated temperatures. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base (drain-connected) for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond wire inductance and improve current sharing; directly connects to PCB ground plane. |
| 4 | Gate (G) | Single gate input with low capacitance (Ciss = 1330 pF typ); requires <10 Ω series gate resistor for controlled turn-on/turn-off. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; must be soldered to large copper area for thermal management and low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-critical applications per stress test requirements, including temperature cycling, HTRB, and ESD. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments (e.g., engine control modules) without thermal shutdown or parameter drift. |
| Low RDS(on) × QG figure-of-merit | 31 nC total gate charge with 5 mΩ on-resistance balances switching efficiency and conduction loss in high-frequency DC-DC or motor drives. |
| Integrated source-drain diode | VSD = 0.85 V @ IS = 25 A enables freewheeling in half-bridge configurations without external Schottky diodes. |
| Robust avalanche capability | 198 mJ unclamped avalanche energy allows safe operation during inductive flyback events common in solenoid and relay driving. |
Applications
| Automotive Engine Control | Body Electronics Switching |
|---|---|
|
Use Scenario: Driving fuel injectors and ignition coils in 12 V engine management systems. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed inductive loads with fast turn-off (<40 ns fall time) and avalanche energy absorption. Use Value: Eliminates need for external flyback diodes and reduces PCB area by integrating rugged switching capability with AEC-Q101 compliance. |
Use Scenario: Controlling headlights, HVAC blowers, and power window motors in vehicle body control modules. IC Role / Device Role / Timing Role: Low-loss power switch operating at 10–100 Hz duty cycles with thermal stability up to 175 °C ambient. Use Value: Reduces conduction loss to <1.25 W at 25 A, minimizing heatsink size and enabling compact, sealed module designs. |
| Industrial 12 V Motor Drives | Commercial Vehicle Lighting |
|
Use Scenario: PWM-controlled DC motors in off-road equipment and agricultural machinery. IC Role / Device Role / Timing Role: Half-bridge low-side switch with 356 A peak current capability and 28 ns fall time for precise torque regulation. Use Value: Supports high peak currents without thermal runaway due to 1.42 K/W Rth(j-mb) and 105 W power dissipation at board level. |
Use Scenario: Solid-state replacement for mechanical relays in trailer lighting and brake lamp circuits. IC Role / Device Role / Timing Role: Fail-safe power switch with integrated source-drain diode (VSD = 0.85 V) for reverse-polarity protection and load dump surge tolerance. Use Value: Achieves >99.5% efficiency at 25 A, extending battery life and eliminating contact wear and arcing failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 2.2 mΩ @ 10 V but requires 4.5 V min gate drive; higher QG = 45 nC; same SOT669 package. | Better conduction loss at high current, but slower switching and less suitable for 3.3 V MCU drive. | Select when lowest RDS(on) dominates and gate drive ≥4.5 V is available; verify SOA for 100 µs pulses. |
| IRL8721PBF | RDS(on) = 6.8 mΩ @ 10 V; TO-220AB package; no AEC-Q101 qualification; Rth(j-c) = 2.5 K/W. | Larger footprint, lower thermal performance, and non-automotive grade limits use to industrial/non-safety-critical systems. | Use only in cost-sensitive, non-automotive 12 V applications where AEC-Q101 and LFPAK thermal advantages are not required. |
Compared with STL220N3LLH6 and IRL8721PBF, BUK7Y07-30B offers optimal balance of AEC-Q101 compliance, 5 mΩ RDS(on), 1.42 K/W thermal resistance, and standard-level gate drive - making it uniquely suited for space-constrained, thermally demanding automotive power switches.
Availability
BUK7Y07-30B is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and industrial 12 V motor drives requiring stable component supply across extended product lifecycles.
Supply support for BUK7Y07-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, ESD protection, and logic devices.
BUK7Y07-30B belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for AEC-Q101-compliant 12 V power switching in harsh under-hood and chassis environments.
FAQ
Is BUK7Y07-30B suitable for high-frequency PWM motor control?
Yes - with 28 ns fall time, 40 ns turn-off delay, and 10.7 nC QGD, it supports PWM frequencies up to 200 kHz in brushed DC motor drives. Its low RDS(on) minimizes conduction loss, while thermal resistance of 1.42 K/W enables stable operation at 75 A with proper PCB copper design.
What is the maximum allowable mounting base temperature for continuous operation?
The mounting base temperature (Tmb) must not exceed 100 °C for continuous 63 A operation, per Figure 1. At Tmb = 25 °C, full 75 A is supported. Derating is linear between these points, and thermal design must ensure Tj ≤ 175 °C using Rth(j-mb) = 1.42 K/W and ambient conditions.
Does BUK7Y07-30B require a gate resistor, and what value is recommended?
Yes - a series gate resistor is required to control dV/dt and prevent oscillation. For 10 V gate drive and typical 100 kHz switching, a 4.7 Ω to 10 Ω resistor provides optimal trade-off between switching speed (QG = 31 nC) and EMI suppression, as confirmed by Nexperia's application note AN10273.
Can BUK7Y07-30B replace a mechanical relay in automotive lighting applications?
Yes - its 356 A peak drain current, 198 mJ avalanche energy, and integrated source-drain diode enable solid-state replacement of 40 A relays in headlight and brake lamp circuits. It eliminates contact bounce, extends service life, and supports PWM dimming without arcing or wear.
BUK7Y07-30B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1773 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 105W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK7Y07-30B,115 FAQ
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6.How does Aetrix verify that BUK7Y07-30B,115 is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of BUK7Y07-30B,115?
All BUK7Y07-30B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y07-30B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7Y07-30B,115 part is unused and in its original packaging.
Return procedure for BUK7Y07-30B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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