Nexperia USA Inc. BUK7Y08-40B,115
- Part No.:
- BUK7Y08-40B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK7Y08-40B,115.pdf
- Description:
- MOSFET N-CH 40V 75A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:3,360
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Product details
Overview
BUK7Y08-40B from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 6 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, and is AEC-Q101 qualified for automotive critical power switching in 12 V systems.
For engineers reviewing the BUK7Y08-40B datasheet, BUK7Y08-40B pinout, BUK7Y08-40B application, or BUK7Y08-40B equivalent, this device supports thermally demanding automotive load control where high-current capability, avalanche ruggedness (146 mJ), and gate-drive compatibility with standard 10 V logic are required.
Technical Context
This MOSFET uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low on-resistance and robust thermal performance. Its 1.42 K/W junction-to-mounting-base thermal resistance enables high-power dissipation (105 W at Tmb = 25 °C) without external heatsinking in constrained layouts.
The device features an integrated source-drain diode with 0.85 V forward voltage at 25 A and 42.5 ns reverse recovery time, supporting inductive load commutation. Gate charge parameters - QG(tot) = 36.3 nC, QGD = 14.7 nC - indicate fast, controllable switching suitable for PWM-driven motors and solenoids.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - defines safe blocking capability in 12 V automotive systems with load-dump transients. |
| RDS(on) | 6 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1.5 W conduction loss at 50 A, reducing thermal stress. |
| ID (continuous) | 75 A at Tmb = 25 °C - supports high-current 12 V loads such as starter relays or HVAC blowers without derating. |
| EAS | 146 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events without failure. |
| Tj(max) | 175 °C maximum junction temperature - allows operation in under-hood environments with minimal thermal margin loss. |
| Rth(j-mb) | 1.42 K/W junction-to-mounting-base thermal resistance - enables direct PCB copper pad cooling, eliminating need for bolted heatsinks. |
| QGD | 14.7 nC gate-drain charge - determines Miller plateau duration and influences switching speed and EMI behavior in hard-switched topologies. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain. Optimized for high-current PCB thermal conduction and mechanical robustness in automotive vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing; directly soldered to PCB ground plane. |
| 4 | Gate (G) | Single gate input with 20 V absolute max rating; compatible with standard 10 V microcontroller or driver IC outputs. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heat sink interface. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| 175 °C junction rating | Enables reliable operation in under-hood locations without active cooling or excessive derating. |
| Standard-level gate drive | Turns fully on with 10 V gate-source voltage - eliminates need for gate boosters or level shifters in 12 V systems. |
| LFPAK thermal performance | 1.42 K/W Rth(j-mb) provides >2× better thermal resistance than comparable SO-8 packages, improving power density. |
| Integrated source-drain diode | 42.5 ns trr and 69.2 nC Qr support efficient freewheeling in motor and solenoid drive circuits. |
Applications
| Automotive Body Control Module (BCM) | 12 V Starter Relay Replacement |
|---|---|
Use Scenario: Electronic control of headlights, window lifts, and door locks in modern BCMs. IC Role / Device Role / Timing Role: High-side or low-side power switch managing up to 75 A peak loads with PWM dimming or timed actuation. Use Value: Eliminates electromechanical relay wear-out and contact bounce while enabling diagnostic current sensing via RDS(on). |
Use Scenario: Solid-state replacement for starter solenoid relays in 12 V battery-fed cranking circuits. IC Role / Device Role / Timing Role: Low-side switch handling 300+ A pulsed cranking current (IDM = 332 A) with controlled turn-on to limit inrush. Use Value: Withstands repeated unclamped inductive energy (146 mJ EAS) during starter disengagement without snubber circuitry. |
| Engine Cooling Fan Driver | Electric Power Steering (EPS) Motor Phase Switch |
Use Scenario: PWM-controlled radiator fan in engine bay with ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, operating continuously at Tj ≥ 150 °C. Use Value: 175 °C Tj(max) and 1.42 K/W thermal resistance maintain safe junction temperature without forced airflow. |
Use Scenario: Phase-leg switching in 12 V EPS motor inverters requiring fast, low-loss commutation. IC Role / Device Role / Timing Role: N-channel FET in three-phase bridge, driven by gate driver with 36.3 nC total gate charge. Use Value: 14.7 nC QGD minimizes Miller-induced shoot-through risk and enables clean 20–44 ns switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, 1.7 mΩ RDS(on), PowerFLAT 5x6 package, higher current but larger footprint and 150 °C Tj(max). | Better for high-current, space-tolerant designs; less suitable for compact LFPAK-replacement upgrades. | Select when peak current >100 A is needed and thermal design accommodates lower Rth(j-mb) (1.0 K/W). |
| IRL1404ZPBF | 40 V, 165 A, 4.8 mΩ RDS(on), TO-220AB package, no AEC-Q101 qualification, 175 °C rating. | Acceptable for industrial 12 V switching but not certified for automotive safety-critical use. | Choose only for non-automotive applications where qualification is not mandated and through-hole assembly is preferred. |
Compared with STL220N4F7AG and IRL1404ZPBF, BUK7Y08-40B uniquely balances AEC-Q101 compliance, LFPAK thermal efficiency, and 75 A capability in a surface-mount footprint - making it optimal for space-constrained, thermally aggressive automotive modules requiring zero qualification risk.
Availability
BUK7Y08-40B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V starter circuits, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for BUK7Y08-40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
This device belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for robust, thermally efficient power switching in 12 V automotive subsystems where AEC-Q101 compliance and long-term reliability are mandatory.
FAQ
Is BUK7Y08-40B suitable for high-side switching configurations?
No - BUK7Y08-40B is an N-channel MOSFET with source terminals tied to ground reference in its standard LFPAK layout. High-side switching requires either a P-channel device or an N-channel with isolated gate drive capable of swinging above the drain rail. Its pinout and thermal design assume low-side placement with mounting base (drain) connected to the positive rail.
What is the maximum allowable gate-source voltage during transient conditions?
The absolute maximum VGS is ±20 V per the datasheet limiting values table. Sustained operation above ±15 V risks gate oxide degradation. For robustness, gate drive should be clamped to +12 V / –5 V using Zener diodes or dedicated gate drivers, especially in noisy automotive environments with load-dump or inductive kickback coupling.
Does BUK7Y08-40B require external gate resistors for stability?
Yes - although not strictly mandatory, a 10 Ω series gate resistor is recommended (per Figure 14 test conditions) to dampen ringing caused by parasitic inductance in high-di/dt switching. This value balances switching speed control and EMI suppression without significantly increasing td(on) or td(off) beyond datasheet specifications.
Can the mounting base be electrically isolated from the PCB ground plane?
No - the mounting base is internally connected to the drain terminal and must be soldered to a copper pour tied to the drain net. Isolating it would break the primary thermal and electrical path, violating the device's thermal design intent and risking overheating or voltage breakdown due to floating potential.
BUK7Y08-40B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 36.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2040 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 105W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK7Y08-40B,115 FAQ
1.How can I place an order for BUK7Y08-40B,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7Y08-40B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK7Y08-40B,115 is sourced from the original manufacturer or authorized distributors?
All BUK7Y08-40B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7Y08-40B,115 meets industry standards.
7.What is the process for return or replacement of BUK7Y08-40B,115?
All BUK7Y08-40B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y08-40B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7Y08-40B,115 part is unused and in its original packaging.
Return procedure for BUK7Y08-40B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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