Nexperia USA Inc. BUK7Y25-40B,115

Overview

BUK7Y25-40B from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 40 V V_DS, 35.3 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers 20 mΩ typical R_DS(on) at V_GS = 10 V and ID = 20 A, and is AEC-Q101 qualified for automotive critical power switching in 12 V systems.

For engineers reviewing the BUK7Y25-40B datasheet, BUK7Y25-40B pinout, BUK7Y25-40B application, or BUK7Y25-40B equivalent, key selection criteria include its thermally robust 2.53 K/W R_th(j-mb), unclamped avalanche energy rating of 37 mJ, gate-drive compatibility with standard 10 V logic, and LFPAK mounting base thermal interface for high-power density PCB layouts.

Technical Context

This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low R_DS(on) while maintaining robust avalanche capability and stable threshold voltage (V_GS(th) = 2–4 V) across -55 °C to 175 °C. Its source-drain diode supports freewheeling in inductive loads with 0.85–1.2 V forward drop at 20 A.

The LFPAK package integrates a metal mounting base directly connected to the drain, enabling efficient heat transfer from junction to heatsink. Dynamic parameters-including 12.1 nC total gate charge, 5.12 nC Q_GD, and 33 ns reverse recovery time-support fast, controlled switching in motor and solenoid drive circuits.

Key Specifications

Pinout & Package

BUK7Y25-40B uses the SOT669 (LFPAK) plastic surface-mount package with exposed metal mounting base for thermal and electrical connection to drain. The 4-terminal layout optimizes current flow and thermal dissipation in high-power automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IRF3205PBF, BUK7Y25-40B uniquely combines AEC-Q101 qualification, LFPAK thermal performance (2.53 K/W), and verified 37 mJ avalanche ruggedness-making it the only option qualified for direct replacement in production automotive power stages without redesign.

Availability

BUK7Y25-40B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC motor drives, and solenoid actuator interfaces requiring stable component supply across multi-year vehicle production cycles.

Supply support for BUK7Y25-40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

BUK7Y25-40B belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for thermally demanding, safety-critical 12 V automotive power switching applications.

FAQ

Is BUK7Y25-40B suitable for high-side switching configurations?

Yes, BUK7Y25-40B can be used in high-side configurations when paired with an appropriate gate driver capable of providing V_GS ≥10 V relative to the source node. Its 40 V V_DS rating and 175 °C junction limit support operation in 12 V systems with transient overvoltage conditions, though external level-shifting circuitry is required for MCU-controlled high-side use.

What is the maximum allowable PCB copper area for thermal performance without a heatsink?

At T_mb = 25 °C, the device delivers 35.3 A continuous current with a minimum recommended 100 mm² (10 mm × 10 mm) 2-oz copper pour connected to the mounting base. For 25 A operation at T_mb = 100 °C, a 200 mm² copper area with thermal vias to inner layers is required to maintain R_th(j-mb) near 2.53 K/W per datasheet Figure 2.

Does BUK7Y25-40B require external avalanche protection in solenoid drive circuits?

No-BUK7Y25-40B is rated for 37 mJ non-repetitive drain-source avalanche energy under defined test conditions (ID = 35.3 A, V_sup ≤40 V, R_GS = 50 Ω). This allows safe absorption of inductive energy from typical 12 V solenoids without external snubbers, provided layout minimizes stray inductance and gate drive remains stable during turn-off.

How does the triple-source-pin configuration improve performance?

The three parallel source terminals (pins 1–3) reduce package source inductance and distribute current evenly across internal bonding wires, lowering overall source impedance by ~30% versus dual-source alternatives. This improves switching consistency, reduces voltage overshoot during turn-off, and enhances current handling in high-di/dt applications like motor commutation.