Nexperia USA Inc. BUK7Y28-75B,115
- Part No.:
- BUK7Y28-75B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK7Y28-75B,115.pdf
- Description:
- MOSFET N-CH 75V 35.5A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:8,572
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Product details
Overview
BUK7Y28-75B from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 75 V VDS, 35.5 A continuous drain current at Tmb = 25 °C, and 23 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified for automotive critical systems including engine management, transmission control, and solenoid drivers.
For engineers reviewing the BUK7Y28-75B datasheet, BUK7Y28-75B pinout, BUK7Y28-75B application, or BUK7Y28-75B equivalent, this device supports thermally demanding 12 V/24 V/42 V power switching with 175 °C junction rating, unclamped avalanche energy of 75 mJ, and gate-drive compatibility with standard 10 V logic sources.
Technical Context
This MOSFET employs Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to deliver low RDS(on) and robust avalanche ruggedness. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with standard logic-level drivers while maintaining safe margin against spurious conduction at high temperature.
The LFPAK SOT669 package integrates a thermally optimized mounting base connected to the drain, enabling 1.76 K/W junction-to-mounting-base thermal resistance. Dynamic parameters-including 7.4 nC QGD, 21.2 nC QG(tot), and 1063 pF Ciss-support fast, controlled switching in DC-DC converters and PWM-driven loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; enables use in 42 V automotive systems with safety margin. |
| ID (continuous) | 35.5 A at Tmb = 25 °C - Sustained load current capability under natural convection on PCB copper area. |
| RDS(on) | 23 mΩ typ. at VGS = 10 V, ID = 15 A, Tj = 25 °C - Low conduction loss for high-efficiency power switching. |
| EAS | 75 mJ unclamped avalanche energy - Withstands single-pulse inductive kickback without failure in solenoid or motor drive circuits. |
| Rth(j-mb) | 1.76 K/W - Enables direct thermal coupling to heatsink via mounting base; critical for sustained 25.1 A operation at Tmb = 100 °C. |
| QGD | 7.4 nC - Gate-drain charge determines Miller plateau duration; key for optimizing switching speed and EMI in hard-switched topologies. |
| VGS(th) | 2–4 V - Threshold voltage range ensures predictable turn-on with 3.3 V/5 V microcontrollers while avoiding false triggering at 175 °C. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base (drain-connected) for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with 20 V absolute max rating; compatible with standard logic-level drivers and isolated gate drivers. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control units and transmission modules. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C. |
| Standard-level gate drive (VGS = 10 V) | Eliminates need for gate boosters or level shifters when driven by common MCU GPIO or dedicated gate drivers. |
| Unclamped avalanche ruggedness (75 mJ) | Provides intrinsic protection against inductive energy dissipation during switch-off in relay/solenoid drivers. |
| Low RDS(on) × QG figure-of-merit | Optimizes trade-off between conduction loss and switching loss in medium-frequency (<100 kHz) power stages. |
Applications
| Engine Management Systems | Transmission Control Modules |
|---|---|
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V/24 V inductive loads with precise µs-level timing. Use Value: 75 mJ avalanche energy absorbs coil flyback without external snubbers; 175 °C rating sustains operation near hot engine blocks. |
Use Scenario: Solenoid actuation for hydraulic pressure control in automatic transmissions. IC Role / Device Role / Timing Role: Low-side driver delivering 35.5 A peak current pulses to linear/switching solenoids. Use Value: 23 mΩ RDS(on) minimizes self-heating during duty-cycle-modulated operation; LFPAK thermal path maintains reliability over 15-year vehicle life. |
| 12 V/24 V DC-DC Converters | Automotive Body Control Modules |
Use Scenario: Synchronous rectification in buck converters powering ADAS sensors and infotainment systems. IC Role / Device Role / Timing Role: Secondary-side FET operating at 200–500 kHz with low QGD for reduced switching loss. Use Value: 7.4 nC QGD and 1063 pF Ciss enable clean, fast turn-off with minimal shoot-through risk in synchronous topology. |
Use Scenario: Centralized power distribution for lighting, window lifts, and seat motors in BCMs. IC Role / Device Role / Timing Role: High-current load switch with integrated diagnostics and short-circuit protection. Use Value: AEC-Q101 compliance ensures functional safety alignment; 35.5 A rating supports multiple 10 A+ loads per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, 0.75 mΩ RDS(on), 5x larger die; requires gate driver due to 4.5 V VGS(th). | Targeted at 12 V battery systems only; unsuitable for 24 V/42 V or high-voltage transients. | Select when ultra-low RDS(on) and higher current are required, and gate drive can support 4.5 V threshold. |
| IRF1404ZPBF | 40 V VDS, 202 A ID, 3.8 mΩ RDS(on), TO-220 package; no AEC-Q101 qualification. | Lacks automotive qualification and thermal performance (Rth(j-c) ≈ 1.2 K/W but no mounting base). | Acceptable for non-automotive industrial switching where qualification and compact thermal design are not mandatory. |
Compared with STL220N4F7AG and IRF1404ZPBF, the BUK7Y28-75B uniquely balances 75 V rating, AEC-Q101 compliance, LFPAK thermal efficiency, and standard-level gate drive-making it the only drop-in solution for thermally constrained 24 V/42 V automotive power nodes requiring long-term reliability.
Availability
BUK7Y28-75B is available at Aetrix Electronics and suitable for engine management systems, transmission control modules, and 12 V/24 V DC-DC converters requiring stable component supply across extended automotive product lifecycles.
Supply support for BUK7Y28-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, logic, and ESD protection.
This device belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS portfolio, engineered specifically for robust, thermally efficient power switching in harsh automotive environments-from under-hood ECUs to body electronics.
FAQ
Is BUK7Y28-75B suitable for 42 V automotive systems?
Yes. Its 75 V VDS rating provides 33 % headroom above nominal 42 V system voltage, accommodating load-dump transients up to ±65 V per ISO 7637-2. The device is explicitly qualified for 42 V applications per its datasheet Section 1.3 and AEC-Q101 stress testing.
What is the recommended PCB layout for thermal performance?
Use ≥200 mm² of 2 oz copper connected directly to the mounting base (pin mb), with ≥4 thermal vias (0.3 mm diameter, filled or plated) beneath the pad. Avoid isolation gaps between the mounting base and ground plane, as the base is drain-connected and must remain at drain potential.
Does BUK7Y28-75B require a gate resistor for stability?
A series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by parasitic inductance in high-di/dt switching. The datasheet Figure 14 shows gate charge behavior with RGS = 50 Ω during avalanche testing, confirming stability with moderate gate impedance.
Can BUK7Y28-75B replace older BUZ72A or STP36NF20 in automotive designs?
No direct replacement: BUZ72A (200 V, TO-220) and STP36NF20 (200 V, TO-220) have higher voltage ratings but lack AEC-Q101 qualification and LFPAK thermal performance. BUK7Y28-75B is optimized for 75 V automotive use-not for 200 V industrial applications-and requires layout redesign due to SOT669 footprint.
BUK7Y28-75B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 35.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1417 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 85W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK7Y28-75B,115 FAQ
1.How can I place an order for BUK7Y28-75B,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7Y28-75B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK7Y28-75B,115 is sourced from the original manufacturer or authorized distributors?
All BUK7Y28-75B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7Y28-75B,115 meets industry standards.
7.What is the process for return or replacement of BUK7Y28-75B,115?
All BUK7Y28-75B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y28-75B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7Y28-75B,115 part is unused and in its original packaging.
Return procedure for BUK7Y28-75B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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