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Nexperia USA Inc. BUK7Y28-75B,115

Part No.:
BUK7Y28-75B,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixBUK7Y28-75B,115.pdf
Description:
MOSFET N-CH 75V 35.5A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,572

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Product details

Overview

BUK7Y28-75B from Nexperia is a standard-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 75 V VDS, 35.5 A continuous drain current at Tmb = 25 °C, and 23 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified for automotive critical systems including engine management, transmission control, and solenoid drivers.

For engineers reviewing the BUK7Y28-75B datasheet, BUK7Y28-75B pinout, BUK7Y28-75B application, or BUK7Y28-75B equivalent, this device supports thermally demanding 12 V/24 V/42 V power switching with 175 °C junction rating, unclamped avalanche energy of 75 mJ, and gate-drive compatibility with standard 10 V logic sources.

Technical Context

This MOSFET employs Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to deliver low RDS(on) and robust avalanche ruggedness. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with standard logic-level drivers while maintaining safe margin against spurious conduction at high temperature.

The LFPAK SOT669 package integrates a thermally optimized mounting base connected to the drain, enabling 1.76 K/W junction-to-mounting-base thermal resistance. Dynamic parameters-including 7.4 nC QGD, 21.2 nC QG(tot), and 1063 pF Ciss-support fast, controlled switching in DC-DC converters and PWM-driven loads.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 75 V - Maximum drain-source blocking voltage; enables use in 42 V automotive systems with safety margin.
ID (continuous) 35.5 A at Tmb = 25 °C - Sustained load current capability under natural convection on PCB copper area.
RDS(on) 23 mΩ typ. at VGS = 10 V, ID = 15 A, Tj = 25 °C - Low conduction loss for high-efficiency power switching.
EAS 75 mJ unclamped avalanche energy - Withstands single-pulse inductive kickback without failure in solenoid or motor drive circuits.
Rth(j-mb) 1.76 K/W - Enables direct thermal coupling to heatsink via mounting base; critical for sustained 25.1 A operation at Tmb = 100 °C.
QGD 7.4 nC - Gate-drain charge determines Miller plateau duration; key for optimizing switching speed and EMI in hard-switched topologies.
VGS(th) 2–4 V - Threshold voltage range ensures predictable turn-on with 3.3 V/5 V microcontrollers while avoiding false triggering at 175 °C.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base (drain-connected) for enhanced thermal performance.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
4 Gate (G) Single gate input with 20 V absolute max rating; compatible with standard logic-level drivers and isolated gate drivers.
Mounting Base (mb) Drain (D) Exposed copper pad electrically and thermally connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive safety-critical applications including engine control units and transmission modules.
175 °C maximum junction temperature Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C.
Standard-level gate drive (VGS = 10 V) Eliminates need for gate boosters or level shifters when driven by common MCU GPIO or dedicated gate drivers.
Unclamped avalanche ruggedness (75 mJ) Provides intrinsic protection against inductive energy dissipation during switch-off in relay/solenoid drivers.
Low RDS(on) × QG figure-of-merit Optimizes trade-off between conduction loss and switching loss in medium-frequency (<100 kHz) power stages.

Applications

Engine Management Systems Transmission Control Modules

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V/24 V inductive loads with precise µs-level timing.

Use Value: 75 mJ avalanche energy absorbs coil flyback without external snubbers; 175 °C rating sustains operation near hot engine blocks.

Use Scenario: Solenoid actuation for hydraulic pressure control in automatic transmissions.

IC Role / Device Role / Timing Role: Low-side driver delivering 35.5 A peak current pulses to linear/switching solenoids.

Use Value: 23 mΩ RDS(on) minimizes self-heating during duty-cycle-modulated operation; LFPAK thermal path maintains reliability over 15-year vehicle life.

12 V/24 V DC-DC Converters Automotive Body Control Modules

Use Scenario: Synchronous rectification in buck converters powering ADAS sensors and infotainment systems.

IC Role / Device Role / Timing Role: Secondary-side FET operating at 200–500 kHz with low QGD for reduced switching loss.

Use Value: 7.4 nC QGD and 1063 pF Ciss enable clean, fast turn-off with minimal shoot-through risk in synchronous topology.

Use Scenario: Centralized power distribution for lighting, window lifts, and seat motors in BCMs.

IC Role / Device Role / Timing Role: High-current load switch with integrated diagnostics and short-circuit protection.

Use Value: AEC-Q101 compliance ensures functional safety alignment; 35.5 A rating supports multiple 10 A+ loads per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDS, 220 A ID, 0.75 mΩ RDS(on), 5x larger die; requires gate driver due to 4.5 V VGS(th). Targeted at 12 V battery systems only; unsuitable for 24 V/42 V or high-voltage transients. Select when ultra-low RDS(on) and higher current are required, and gate drive can support 4.5 V threshold.
IRF1404ZPBF 40 V VDS, 202 A ID, 3.8 mΩ RDS(on), TO-220 package; no AEC-Q101 qualification. Lacks automotive qualification and thermal performance (Rth(j-c) ≈ 1.2 K/W but no mounting base). Acceptable for non-automotive industrial switching where qualification and compact thermal design are not mandatory.

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK7Y28-75B uniquely balances 75 V rating, AEC-Q101 compliance, LFPAK thermal efficiency, and standard-level gate drive-making it the only drop-in solution for thermally constrained 24 V/42 V automotive power nodes requiring long-term reliability.

Availability

BUK7Y28-75B is available at Aetrix Electronics and suitable for engine management systems, transmission control modules, and 12 V/24 V DC-DC converters requiring stable component supply across extended automotive product lifecycles.

Supply support for BUK7Y28-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, logic, and ESD protection.

This device belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS portfolio, engineered specifically for robust, thermally efficient power switching in harsh automotive environments-from under-hood ECUs to body electronics.

FAQ

Is BUK7Y28-75B suitable for 42 V automotive systems?

Yes. Its 75 V VDS rating provides 33 % headroom above nominal 42 V system voltage, accommodating load-dump transients up to ±65 V per ISO 7637-2. The device is explicitly qualified for 42 V applications per its datasheet Section 1.3 and AEC-Q101 stress testing.

What is the recommended PCB layout for thermal performance?

Use ≥200 mm² of 2 oz copper connected directly to the mounting base (pin mb), with ≥4 thermal vias (0.3 mm diameter, filled or plated) beneath the pad. Avoid isolation gaps between the mounting base and ground plane, as the base is drain-connected and must remain at drain potential.

Does BUK7Y28-75B require a gate resistor for stability?

A series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by parasitic inductance in high-di/dt switching. The datasheet Figure 14 shows gate charge behavior with RGS = 50 Ω during avalanche testing, confirming stability with moderate gate impedance.

Can BUK7Y28-75B replace older BUZ72A or STP36NF20 in automotive designs?

No direct replacement: BUZ72A (200 V, TO-220) and STP36NF20 (200 V, TO-220) have higher voltage ratings but lack AEC-Q101 qualification and LFPAK thermal performance. BUK7Y28-75B is optimized for 75 V automotive use-not for 200 V industrial applications-and requires layout redesign due to SOT669 footprint.

BUK7Y28-75B,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
35.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
21.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1417 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
85W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

BUK7Y28-75B,115 FAQ

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Please submit a Request for Quotation (RFQ) for BUK7Y28-75B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK7Y28-75B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7Y28-75B,115 is usually 5 days.

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For technical support, including BUK7Y28-75B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7Y28-75B,115 requirements.

6.How does Aetrix verify that BUK7Y28-75B,115 is sourced from the original manufacturer or authorized distributors?

All BUK7Y28-75B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7Y28-75B,115 meets industry standards.

7.What is the process for return or replacement of BUK7Y28-75B,115?

All BUK7Y28-75B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y28-75B,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7Y28-75B,115 part is unused and in its original packaging.

Return procedure for BUK7Y28-75B,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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