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NXP Semiconductors BUK7Y35-55B,115

Part No.:
BUK7Y35-55B,115
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixBUK7Y35-55B,115.pdf
Description:
MOSFET N-CH 55V 28.43A LFPAK56
Quantity:
Payment:
Payment
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Inventory:7,566

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Product details

Overview

BUK7Y35-55B from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in LFPAK (SOT669) package, rated for 55 V VDS, 28.4 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It serves as a high-reliability load switch in automotive engine management, ABS, and 12 V/24 V power distribution systems.

For engineers reviewing the BUK7Y35-55B datasheet, BUK7Y35-55B pinout, BUK7Y35-55B application, or BUK7Y35-55B equivalent, key selection criteria include RDS(on) stability over temperature (28–73.5 mΩ), avalanche energy rating (33 mJ), gate drive compatibility with 10 V logic, and thermal resistance (2.53 K/W junction-to-mounting-base).

Technical Context

This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to deliver low on-resistance with robust thermal performance. Its standard-level gate threshold (2–4 V) enables direct drive from 5 V/10 V microcontrollers without level-shifting, while the integrated source-drain diode supports freewheeling in inductive loads like solenoids and motors.

The LFPAK package features a thermally enhanced mounting base connected to the drain, enabling efficient heat transfer to PCB copper. Its 4-pin configuration (3× source, 1× gate, drain via mounting base) supports high-current switching with minimized parasitic inductance and stable SOA up to 100 ms at 30 V.

Key Specifications

Parameter Value and Actual Design Meaning
VDS55 V - Maximum drain-source blocking voltage; suitable for 24 V automotive systems with transient margin.
ID (continuous)28.4 A at Tmb = 25 °C - Sustains full-load current in engine control modules without forced cooling.
RDS(on)28–35 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss (<0.8 W at 15 A) improves system efficiency.
EAS33 mJ - Non-repetitive avalanche energy rating ensures ruggedness during inductive load turn-off.
Rth(j-mb)2.53 K/W - Enables direct thermal coupling to PCB heatsink; supports >40 W dissipation with 100 °C ΔT.
QG(tot)13.1 nC - Moderate gate charge allows fast switching (td(on)/td(off) ≤18 ns) with low-drive-strength controllers.
VGS(th)2–4 V - Standard-level threshold ensures reliable turn-on with 5 V logic and immunity to noise-induced false triggering.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed drain mounting base for thermal and electrical connection.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 (S)SourceThree parallel source terminals reduce bond-wire inductance and improve current sharing in high-dI/dt switching.
4 (G)GateSingle gate input optimized for 10 V drive; QGD = 5.34 nC minimizes Miller effect during switching transitions.
Mounting base (D)DrainExposed copper pad electrically and thermally connected to drain; requires soldered PCB thermal pad for rated power handling.

Key Features

Feature Design Value
AEC-Q101 qualifiedValidated for automotive safety-critical applications including ABS and engine control under extended temperature and vibration stress.
175 °C maximum junction temperatureEnables operation in under-hood environments without derating in ambient temperatures up to 125 °C.
Standard-level gate drive (VGS(th) = 2–4 V)Direct interface with 5 V microcontrollers and ASICs; eliminates need for external gate drivers in most 12 V systems.
Low RDS(on) temperature coefficientRDS(on) increases only to 73.5 mΩ at Tj = 175 °C - maintains predictable conduction loss across full operating range.
Integrated source-drain diodeVSD = 0.85–1.2 V at 15 A enables efficient freewheeling in motor and solenoid drives without external diodes.

Applications

Engine Management Systems Advanced Braking (ABS)

Use Scenario: Switching fuel injectors, ignition coils, and throttle actuators in gasoline and diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed 12 V loads with precise timing and current limiting.

Use Value: 28.4 A rating and 33 mJ avalanche capability prevent failure during coil flyback transients; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Driving ABS solenoid valves requiring rapid, repeatable actuation cycles under high-vibration conditions.

IC Role / Device Role / Timing Role: Low-side switching element delivering controlled current pulses to electromagnetic solenoids.

Use Value: Low RDS(on) (28 mΩ) minimizes self-heating during duty-cycled operation; Q101 qualification guarantees long-term functional safety compliance.

12 V/24 V Power Distribution Motor & Lamp Control

Use Scenario: Centralized body control module (BCM) managing door locks, window lifts, and lighting loads.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in centralized power rail switching.

Use Value: 55 V VDS withstands load-dump transients up to 40 V; LFPAK thermal performance supports sustained 20 A loads without heatsinks.

Use Scenario: Controlling radiator fans, HVAC blowers, and headlamp circuits in passenger vehicles.

IC Role / Device Role / Timing Role: High-current, thermally robust switch interfacing between MCU outputs and inductive/resistive loads.

Use Value: Integrated source-drain diode handles back-EMF from DC motors; 100 µs SOA supports PWM dimming of lamps without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
BUK7K35-55ESame die, but in smaller LFPAK56 (SOT1205) package; RDS(on) = 35 mΩ (typ), Ptot = 42 W, Rth(j-mb) = 3.5 K/W.Limited to lower-power 12 V loads due to reduced thermal capability; not recommended for sustained >15 A operation.Select BUK7K35-55E only when board space is constrained and peak current remains below 18 A.
IPB034N04LG40 V OptiMOS™ device; RDS(on) = 3.4 mΩ (typ); higher gate charge (QG = 32 nC); different pinout (TO-263).Not suitable for 24 V or load-dump scenarios; requires gate driver for fast switching; incompatible PCB layout.Choose IPB034N04LG only for 12 V non-automotive applications where ultra-low RDS(on) outweighs voltage margin and qualification requirements.

Compared with BUK7Y35-55B, BUK7K35-55E trades thermal performance for compactness, while IPB034N04LG offers lower on-resistance at the cost of voltage rating, qualification, and package compatibility-making BUK7Y35-55B the optimal choice for AEC-Q101-compliant 24 V automotive switching.

Availability

BUK7Y35-55B is available at Aetrix Electronics and suitable for automotive engine control units, ABS modules, and 12 V/24 V power distribution systems requiring stable component supply across multi-year production cycles.

Supply support for BUK7Y35-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BUK7Y35-55B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for thermally demanding, safety-critical vehicle subsystems requiring AEC-Q101 compliance and 175 °C operation.

FAQ

What is the maximum continuous drain current rating for BUK7Y35-55B?

The BUK7Y35-55B supports 28.4 A continuous drain current at mounting base temperature (Tmb) = 25 °C, derating to 20.1 A at Tmb = 100 °C. This rating assumes proper PCB thermal design with the mounting base fully soldered to a ≥100 mm² copper area. The value is measured under standardized test conditions per IEC 60134 and reflects real-world capability in automotive under-hood environments.

Is BUK7Y35-55B suitable for 24 V automotive systems with load-dump transients?

Yes, BUK7Y35-55B is rated for 55 V drain-source voltage and qualified to AEC-Q101, making it suitable for 24 V systems subject to ISO 7637-2 load-dump transients (up to 40 V). Its V(BR)DSS minimum of 55 V provides margin against overshoot, and its 33 mJ non-repetitive avalanche energy rating protects against inductive kickback during switching events in such applications.

Does BUK7Y35-55B require a gate driver IC for MCU-level control?

No, BUK7Y35-55B is a standard-level MOSFET with VGS(th) of 2–4 V and total gate charge of 13.1 nC, enabling direct drive from 5 V or 10 V microcontroller GPIOs. Its low QGD (5.34 nC) and moderate QG(tot) allow clean switching without external drivers in typical 12 V/24 V automotive load-switching applications.

What is the thermal resistance from junction to mounting base for BUK7Y35-55B?

The BUK7Y35-55B has a maximum thermal resistance Rth(j-mb) of 2.53 K/W from junction to mounting base, measured under JEDEC JESD51-14 conditions. This value assumes full-solder attachment of the exposed drain pad to a thermally optimized PCB land pattern, enabling efficient heat extraction critical for sustained high-current operation in automotive modules.

Can BUK7Y35-55B replace mechanical relays in body control modules?

Yes, BUK7Y35-55B is widely used as a solid-state relay replacement in BCMs due to its 28.4 A current capacity, 55 V blocking voltage, integrated source-drain diode, and AEC-Q101 qualification. Its LFPAK package delivers superior thermal performance and reliability versus electromechanical relays, especially in high-cycle applications like power windows and door locks where contact wear and bounce are concerns.

BUK7Y35-55B,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
28.43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
13.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
781 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

BUK7Y35-55B,115 FAQ

1.How can I place an order for BUK7Y35-55B,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7Y35-55B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7Y35-55B,115 reliable?

The price and inventory of BUK7Y35-55B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7Y35-55B,115 is usually 5 days.

3.What payment methods are accepted for BUK7Y35-55B,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7Y35-55B,115 transactions.

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4.How is shipping managed for BUK7Y35-55B,115?

BUK7Y35-55B,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7Y35-55B,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7Y35-55B,115?

For technical support, including BUK7Y35-55B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7Y35-55B,115 requirements.

6.How does Aetrix verify that BUK7Y35-55B,115 is sourced from the original manufacturer or authorized distributors?

All BUK7Y35-55B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7Y35-55B,115 meets industry standards.

7.What is the process for return or replacement of BUK7Y35-55B,115?

All BUK7Y35-55B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y35-55B,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7Y35-55B,115 part is unused and in its original packaging.

Return procedure for BUK7Y35-55B,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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