NXP Semiconductors BUK7Y35-55B,115
- Part No.:
- BUK7Y35-55B,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK7Y35-55B,115.pdf
- Description:
- MOSFET N-CH 55V 28.43A LFPAK56
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK7Y35-55B from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in LFPAK (SOT669) package, rated for 55 V VDS, 28.4 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It serves as a high-reliability load switch in automotive engine management, ABS, and 12 V/24 V power distribution systems.
For engineers reviewing the BUK7Y35-55B datasheet, BUK7Y35-55B pinout, BUK7Y35-55B application, or BUK7Y35-55B equivalent, key selection criteria include RDS(on) stability over temperature (28–73.5 mΩ), avalanche energy rating (33 mJ), gate drive compatibility with 10 V logic, and thermal resistance (2.53 K/W junction-to-mounting-base).
Technical Context
This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to deliver low on-resistance with robust thermal performance. Its standard-level gate threshold (2–4 V) enables direct drive from 5 V/10 V microcontrollers without level-shifting, while the integrated source-drain diode supports freewheeling in inductive loads like solenoids and motors.
The LFPAK package features a thermally enhanced mounting base connected to the drain, enabling efficient heat transfer to PCB copper. Its 4-pin configuration (3× source, 1× gate, drain via mounting base) supports high-current switching with minimized parasitic inductance and stable SOA up to 100 ms at 30 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; suitable for 24 V automotive systems with transient margin. |
| ID (continuous) | 28.4 A at Tmb = 25 °C - Sustains full-load current in engine control modules without forced cooling. |
| RDS(on) | 28–35 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss (<0.8 W at 15 A) improves system efficiency. |
| EAS | 33 mJ - Non-repetitive avalanche energy rating ensures ruggedness during inductive load turn-off. |
| Rth(j-mb) | 2.53 K/W - Enables direct thermal coupling to PCB heatsink; supports >40 W dissipation with 100 °C ΔT. |
| QG(tot) | 13.1 nC - Moderate gate charge allows fast switching (td(on)/td(off) ≤18 ns) with low-drive-strength controllers. |
| VGS(th) | 2–4 V - Standard-level threshold ensures reliable turn-on with 5 V logic and immunity to noise-induced false triggering. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed drain mounting base for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-dI/dt switching. |
| 4 (G) | Gate | Single gate input optimized for 10 V drive; QGD = 5.34 nC minimizes Miller effect during switching transitions. |
| Mounting base (D) | Drain | Exposed copper pad electrically and thermally connected to drain; requires soldered PCB thermal pad for rated power handling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including ABS and engine control under extended temperature and vibration stress. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C. |
| Standard-level gate drive (VGS(th) = 2–4 V) | Direct interface with 5 V microcontrollers and ASICs; eliminates need for external gate drivers in most 12 V systems. |
| Low RDS(on) temperature coefficient | RDS(on) increases only to 73.5 mΩ at Tj = 175 °C - maintains predictable conduction loss across full operating range. |
| Integrated source-drain diode | VSD = 0.85–1.2 V at 15 A enables efficient freewheeling in motor and solenoid drives without external diodes. |
Applications
| Engine Management Systems | Advanced Braking (ABS) |
|---|---|
Use Scenario: Switching fuel injectors, ignition coils, and throttle actuators in gasoline and diesel ECUs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed 12 V loads with precise timing and current limiting. Use Value: 28.4 A rating and 33 mJ avalanche capability prevent failure during coil flyback transients; 175 °C rating ensures reliability near hot engine blocks. |
Use Scenario: Driving ABS solenoid valves requiring rapid, repeatable actuation cycles under high-vibration conditions. IC Role / Device Role / Timing Role: Low-side switching element delivering controlled current pulses to electromagnetic solenoids. Use Value: Low RDS(on) (28 mΩ) minimizes self-heating during duty-cycled operation; Q101 qualification guarantees long-term functional safety compliance. |
| 12 V/24 V Power Distribution | Motor & Lamp Control |
Use Scenario: Centralized body control module (BCM) managing door locks, window lifts, and lighting loads. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in centralized power rail switching. Use Value: 55 V VDS withstands load-dump transients up to 40 V; LFPAK thermal performance supports sustained 20 A loads without heatsinks. |
Use Scenario: Controlling radiator fans, HVAC blowers, and headlamp circuits in passenger vehicles. IC Role / Device Role / Timing Role: High-current, thermally robust switch interfacing between MCU outputs and inductive/resistive loads. Use Value: Integrated source-drain diode handles back-EMF from DC motors; 100 µs SOA supports PWM dimming of lamps without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BUK7K35-55E | Same die, but in smaller LFPAK56 (SOT1205) package; RDS(on) = 35 mΩ (typ), Ptot = 42 W, Rth(j-mb) = 3.5 K/W. | Limited to lower-power 12 V loads due to reduced thermal capability; not recommended for sustained >15 A operation. | Select BUK7K35-55E only when board space is constrained and peak current remains below 18 A. |
| IPB034N04LG | 40 V OptiMOS™ device; RDS(on) = 3.4 mΩ (typ); higher gate charge (QG = 32 nC); different pinout (TO-263). | Not suitable for 24 V or load-dump scenarios; requires gate driver for fast switching; incompatible PCB layout. | Choose IPB034N04LG only for 12 V non-automotive applications where ultra-low RDS(on) outweighs voltage margin and qualification requirements. |
Compared with BUK7Y35-55B, BUK7K35-55E trades thermal performance for compactness, while IPB034N04LG offers lower on-resistance at the cost of voltage rating, qualification, and package compatibility-making BUK7Y35-55B the optimal choice for AEC-Q101-compliant 24 V automotive switching.
Availability
BUK7Y35-55B is available at Aetrix Electronics and suitable for automotive engine control units, ABS modules, and 12 V/24 V power distribution systems requiring stable component supply across multi-year production cycles.
Supply support for BUK7Y35-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The BUK7Y35-55B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for thermally demanding, safety-critical vehicle subsystems requiring AEC-Q101 compliance and 175 °C operation.
FAQ
What is the maximum continuous drain current rating for BUK7Y35-55B?
The BUK7Y35-55B supports 28.4 A continuous drain current at mounting base temperature (Tmb) = 25 °C, derating to 20.1 A at Tmb = 100 °C. This rating assumes proper PCB thermal design with the mounting base fully soldered to a ≥100 mm² copper area. The value is measured under standardized test conditions per IEC 60134 and reflects real-world capability in automotive under-hood environments.
Is BUK7Y35-55B suitable for 24 V automotive systems with load-dump transients?
Yes, BUK7Y35-55B is rated for 55 V drain-source voltage and qualified to AEC-Q101, making it suitable for 24 V systems subject to ISO 7637-2 load-dump transients (up to 40 V). Its V(BR)DSS minimum of 55 V provides margin against overshoot, and its 33 mJ non-repetitive avalanche energy rating protects against inductive kickback during switching events in such applications.
Does BUK7Y35-55B require a gate driver IC for MCU-level control?
No, BUK7Y35-55B is a standard-level MOSFET with VGS(th) of 2–4 V and total gate charge of 13.1 nC, enabling direct drive from 5 V or 10 V microcontroller GPIOs. Its low QGD (5.34 nC) and moderate QG(tot) allow clean switching without external drivers in typical 12 V/24 V automotive load-switching applications.
What is the thermal resistance from junction to mounting base for BUK7Y35-55B?
The BUK7Y35-55B has a maximum thermal resistance Rth(j-mb) of 2.53 K/W from junction to mounting base, measured under JEDEC JESD51-14 conditions. This value assumes full-solder attachment of the exposed drain pad to a thermally optimized PCB land pattern, enabling efficient heat extraction critical for sustained high-current operation in automotive modules.
Can BUK7Y35-55B replace mechanical relays in body control modules?
Yes, BUK7Y35-55B is widely used as a solid-state relay replacement in BCMs due to its 28.4 A current capacity, 55 V blocking voltage, integrated source-drain diode, and AEC-Q101 qualification. Its LFPAK package delivers superior thermal performance and reliability versus electromechanical relays, especially in high-cycle applications like power windows and door locks where contact wear and bounce are concerns.
BUK7Y35-55B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 28.43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 781 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK7Y35-55B,115 FAQ
1.How can I place an order for BUK7Y35-55B,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7Y35-55B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7Y35-55B,115 reliable?
The price and inventory of BUK7Y35-55B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7Y35-55B,115 is usually 5 days.
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Once your BUK7Y35-55B,115 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for BUK7Y35-55B,115?
For technical support, including BUK7Y35-55B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7Y35-55B,115 requirements.
6.How does Aetrix verify that BUK7Y35-55B,115 is sourced from the original manufacturer or authorized distributors?
All BUK7Y35-55B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7Y35-55B,115 meets industry standards.
7.What is the process for return or replacement of BUK7Y35-55B,115?
All BUK7Y35-55B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7Y35-55B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7Y35-55B,115 part is unused and in its original packaging.
Return procedure for BUK7Y35-55B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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