NXP Semiconductors BUK7Y54-75B,115

Overview

BUK7Y54-75B from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in LFPAK (SOT669) package, rated for 75 V V_DS, 21.4 A continuous drain current at T_mb = 25 °C, and 59 W total power dissipation. It features 45–54 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and is AEC-Q101 qualified for automotive load switching.

For engineers reviewing the BUK7Y54-75B datasheet, BUK7Y54-75B pinout, BUK7Y54-75B application, or BUK7Y54-75B equivalent, this page delivers verified electrical specs, thermal performance data, gate charge values (Q_G(tot) = 12 nC), avalanche energy rating (33 mJ), and real-world use context for 12 V/24 V solenoid and DC-DC converter designs.

Technical Context

This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low on-resistance with robust thermal performance up to 175 °C junction temperature. Its standard-level gate drive compatibility (V_GS(th) = 2–4 V, max 4.4 V at −55 °C) enables direct interfacing with 5 V and 3.3 V microcontrollers without level-shifting.

The LFPAK package provides low R_th(j-mb) = 2.53 K/W and integrates the mounting base as the drain terminal, enabling high-current conduction and efficient heat transfer to PCB copper. Its unclamped inductive switching capability supports 33 mJ non-repetitive avalanche energy under defined test conditions.

Key Specifications

Pinout & Package

BUK7Y54-75B is housed in the LFPAK (SOT669) plastic single-ended surface-mounted package with exposed mounting base acting as the drain terminal. The package features three source terminals (Pins 1–3), one gate terminal (Pin 4), and an integrated drain-connected mounting base for low-inductance, high-current routing and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BUK7Y54-75B, the BUK7K54-75B offers identical silicon performance in a legacy DPAK format but sacrifices thermal and inductive advantages; the PSMN5R5-75YL delivers far lower R_DS(on) and higher current, yet lacks automotive qualification and increases board area and BOM cost significantly.

Availability

BUK7Y54-75B is available at Aetrix Electronics and suitable for automotive load switching, DC-DC converter design, and solenoid driver applications requiring stable component supply, AEC-Q101 compliance, and extended temperature operation.

Supply support for BUK7Y54-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, formed in 2017 from the former NXP Standard Products business. It focuses on high-volume, high-reliability components for automotive, industrial, computing, and consumer markets.

The BUK7Y54-75B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for robust, thermally efficient switching in 12 V–42 V automotive subsystems and industrial power controls.

FAQ

What is the maximum gate-source voltage rating for BUK7Y54-75B?

The BUK7Y54-75B has a maximum gate-source voltage (V_GS) rating of ±20 V, as specified in its limiting values table. Exceeding this voltage risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS within −20 V to +20 V, with typical use at 10 V for full enhancement. This rating applies across the full junction temperature range from −55 °C to 175 °C.

Is BUK7Y54-75B suitable for 42 V automotive systems?

Yes, BUK7Y54-75B is explicitly designed for 42 V automotive systems. Its 75 V V_DS rating provides ≥30 % overvoltage margin above nominal 42 V rail, accommodating load-dump transients and system spikes per ISO 7637-2. Combined with AEC-Q101 qualification and 175 °C junction rating, BUK7Y54-75B meets functional safety requirements for critical 42 V power distribution modules.

Does BUK7Y54-75B have an integrated body diode, and what are its characteristics?

Yes, BUK7Y54-75B includes an intrinsic body diode with forward voltage V_SD = 0.85–1.2 V at I_S = 10 A and T_j = 25 °C, and reverse recovery time t_rr = 47 ns at I_S = 20 A. Its recovered charge Q_r is 98 nC. These parameters enable use in freewheeling and synchronous rectification roles, though external Schottky diodes may be preferred for ultra-low-loss or high-frequency applications.

How does the LFPAK package of BUK7Y54-75B improve thermal performance compared to SO8?

The LFPAK (SOT669) package of BUK7Y54-75B achieves R_th(j-mb) = 2.53 K/W - approximately 3× better than typical SO8 packages (~7–8 K/W). This is accomplished via a large copper mounting base directly bonded to the die drain, enabling efficient heat transfer to the PCB. Unlike SO8, LFPAK eliminates internal leadframe thermal bottlenecks and supports higher current density without thermal derating penalties.

Can BUK7Y54-75B replace older NXP BUK7 series MOSFETs like BUK7524-75B?

BUK7Y54-75B is not a direct replacement for BUK7524-75B due to differences in R_DS(on) (45–54 mΩ vs. 24 mΩ), package (LFPAK vs. TO-220AB), and thermal resistance. While both share 75 V rating and AEC-Q101 qualification, BUK7Y54-75B targets space-constrained, high-thermal-demand applications where LFPAK's superior R_th and low inductance outweigh the higher on-resistance. PCB redesign is required.