Nexperia USA Inc. BUK7Y65-100EX

Overview

BUK7Y65-100EX from Nexperia is a standard-level N-channel MOSFET designed for high-reliability automotive power switching, featuring 100 V V_DS, 65 mΩ R_DS(on) at 25 °C, AEC-Q101 qualification, and LFPAK56 (SOT669) package with integrated mounting base. It serves as a robust load switch in 12 V/24 V/48 V vehicle subsystems requiring repetitive avalanche capability and operation up to 175 °C junction temperature.

For engineers reviewing the BUK7Y65-100EX datasheet, BUK7Y65-100EX pinout, BUK7Y65-100EX application, or BUK7Y65-100EX equivalent, this device is selected for thermally demanding automotive control circuits where gate drive simplicity (V_GS(th) > 1 V at 175 °C), low conduction loss, and rugged unclamped avalanche performance (25.3 mJ) are critical.

Technical Context

This MOSFET uses TrenchMOS technology to achieve stable R_DS(on) across temperature - 65 mΩ at 25 °C rising to 180 mΩ at 175 °C - while maintaining true standard-level gate drive compatibility. Its LFPAK56 package integrates the drain directly to the exposed mounting base, enabling low 2.31 K/W junction-to-mounting-base thermal resistance for efficient heat transfer to PCB copper or heatsinks.

The device supports pulsed peak drain current of 76 A (t_p ≤ 10 µs), operates with 7 nC Q_GD and 17.8 nC Q_G(tot), and features a source-drain diode with 31.5 ns reverse recovery time and 40.6 nC recovered charge - key parameters for synchronous rectification and inductive load switching.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with an exposed copper mounting base electrically connected to the drain terminal. It provides superior thermal and power cycling performance over conventional SO-8, with 4 solderable terminals and optimized layout for high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N10F7 and NTMFS5C675NL, the BUK7Y65-100EX offers balanced trade-offs: moderate R_DS(on) (65 mΩ), low Q_GD (7 nC), and industry-leading thermal resistance (2.31 K/W), making it optimal for space-constrained, thermally aggressive automotive switches where gate drive simplicity and avalanche ruggedness are prioritized.

Availability

BUK7Y65-100EX is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and 48 V mild hybrid battery management systems requiring stable component supply, long lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for BUK7Y65-100EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic solutions.

The BUK7Y65-100EX belongs to Nexperia's LFPAK automotive MOSFET product line, engineered specifically for high-power, high-temperature automotive switching applications where robustness, thermal efficiency, and AEC-Q101 compliance are mandatory.

FAQ

Is BUK7Y65-100EX suitable for high-side switching in 48 V automotive systems?

Yes - its 100 V V_DS rating provides sufficient margin for 48 V bus transients (including ISO 16750-2 load dump), and its AEC-Q101 qualification ensures reliability in harsh automotive environments. When used in high-side configuration, it requires a gate driver capable of delivering >10 V above the source potential, such as a bootstrap or isolated gate driver circuit.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is 13.4 A at T_mb = 100 °C and V_GS = 10 V. This reflects thermal derating due to reduced heat dissipation capability at elevated mounting base temperatures - design must ensure adequate PCB copper area and thermal vias to maintain T_mb ≤ 100 °C under full load.

Does the source-drain body diode support synchronous rectification?

The integrated body diode has a forward voltage of 0.82–1.2 V at 5 A and 25 °C, with 31.5 ns reverse recovery time and 40.6 nC recovered charge. While usable for freewheeling, its Q_r and t_rr values indicate it is not optimized for high-frequency synchronous rectification - external Schottky diodes are recommended for >100 kHz operation.

How does the LFPAK56 package compare thermally to standard SO-8?

The LFPAK56 package achieves 2.31 K/W R_th(j-mb), roughly 3× better than typical SO-8 (≈7 K/W), due to its exposed copper mounting base directly bonded to the drain. This allows significantly higher power dissipation - up to 64 W at T_mb = 25 °C - and improved long-term reliability under thermal cycling stress common in automotive applications.