Nexperia USA Inc. BUK9107-40ATC,118

Overview

BUK9107-40ATC from NXP Semiconductors is an AEC-Q101-qualified N-channel TrenchPLUS logic-level MOSFET in D2PAK (SOT426) package, designed for automotive power switching. It features 40 V V_DS, 5.8 mΩ R_DS(on) @ V_GS = 5 V / I_D = 50 A / T_j = 25 °C, integrated temperature-sense diode (SF_TSD = −1.54 mV/K), and built-in clamping diodes and ESD protection. Used in EPAS and 12/24 V motor drives.

For engineers reviewing the BUK9107-40ATC datasheet, BUK9107-40ATC pinout, BUK9107-40ATC application, or BUK9107-40ATC equivalent, this page delivers verified thermal resistance (R_th(j-mb) = 0.55 K/W), clamping energy rating (1.4 J), gate threshold range (0.5–2.3 V), and mounting-base-referenced current derating curves - all critical for high-reliability automotive thermal and SOA design.

Technical Context

This MOSFET uses NXP's TrenchPLUS process with integrated temperature-sense diode (TSD) and bidirectional clamping diodes across drain-gate and gate-source terminals. Its logic-level gate drive (V_GS(th) max 2.3 V at −55 °C) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.

Thermal management relies on the exposed mounting base (mb), electrically connected to drain, delivering R_th(j-mb) = 0.55 K/W. The device supports pulsed peak drain current up to 560 A (t_p ≤ 10 µs) and non-repetitive drain-source clamping energy of 1.4 J under defined unclamped conditions.

Key Specifications

Pinout & Package

Package: D2PAK (SOT426), plastic single-ended surface-mounted package with 5 leads (one cropped), featuring an exposed copper mounting base electrically tied to drain for low-inductance, high-current, and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Compared with STL220N4F7AG and BSC014N04LS6, BUK9107-40ATC trades ~1–2 mΩ higher R_DS(on) for integrated TSD, dual clamping diodes, and AEC-Q101 compliance - delivering system-level cost reduction and functional safety assurance in automotive power stages.

Availability

BUK9107-40ATC is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), 12 V/24 V motor drives, and protected lamp driving requiring stable component supply across automotive production lifecycles.

Supply support for BUK9107-40ATC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

BUK9107-40ATC belongs to NXP's TrenchPLUS automotive MOSFET product line, engineered specifically for high-current, thermally demanding power switching in safety-critical vehicle subsystems such as steering, braking, and body electronics.

FAQ

What is the maximum continuous drain current for BUK9107-40ATC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is limited to 75 A per Table 4 - this is package-limited, not silicon-limited. The device maintains full 40 V V_DS rating and 5.8 mΩ R_DS(on) up to T_j = 175 °C, but thermal derating follows the curve in Figure 2, where current drops linearly from 75 A at 25 °C to 0 A near 175 °C.

How is the temperature sense diode biased and read in a typical application?

The TSD is biased with a constant 250 µA current source (per Table 1 and Figure 17). Its forward voltage (658 mV typ at 25 °C) changes linearly with junction temperature at −1.54 mV/K. A precision ADC measures VF(TSD), then calculates T_j = 25 °C + (V_F − 658 mV) / (−1.54 mV/K). Hysteresis is 32 mV max to prevent oscillation near trip points.

Does BUK9107-40ATC require external gate resistors for automotive motor drive applications?

Yes - while the device supports fast switching (t_f = 11 µs), a gate resistor (typically 10–47 Ω) is required to dampen ringing caused by L_S = 7.5 nH and parasitic PCB inductance. Without it, V_GS overshoot can exceed ±15 V absolute maximum, risking gate oxide damage during high-dI/dt commutation in H-bridges.

Can BUK9107-40ATC be used in parallel configurations for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (Figure 8) ensures inherent current sharing. However, layout symmetry is critical: matched gate trace lengths, Kelvin source routing, and identical thermal paths to mounting base are mandatory. Parallel operation beyond 150 A requires derating per Figure 2 and validation of TSD signal integrity across devices.