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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9107-55ATE,118

Name: BUK9107-55ATE,118
Brand: Nexperia USA Inc.
SKU: BUK9107-55ATE,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9107-55ATE,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

Datasheet:: BUK9107-55ATE,118.pdf

Description:: MOSFET N-CH 55V 75A SOT426

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Product details

Overview

BUK9107-55ATE,118 from NXP Semiconductors is an AEC-Q101 qualified N-channel TrenchPLUS logic-level MOSFET in D2PAK (SOT426) package, featuring integrated temperature-sensing diode and ESD protection diodes. It delivers 55 V V_DS, 7 mΩ R_DS(on) at V_GS = 5 V / I_D = 50 A / T_j = 25 °C, and 272 W P_tot at T_mb = 25 °C, designed for automotive power switching including EPAS and high-power motor drives.

For engineers reviewing the BUK9107-55ATE,118 datasheet, BUK9107-55ATE,118 pinout, BUK9107-55ATE,118 application, or BUK9107-55ATE,118 equivalent, key selection criteria include its integrated temperature sensing (−1.54 mV/K coefficient), low gate threshold (1.5 V typ), robust 6 kV HBM ESD rating, and dual-function cathode/anode terminals enabling protected lamp drive and thermal feedback in compact 5-lead surface-mount form.

Technical Context

This device implements a trench-based MOSFET structure with monolithically integrated temperature sense diode (TSD) and bidirectional ESD protection diodes across gate-source and drain-source paths. Its logic-level gate drive (V_GS(th) = 1.5 V typ) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.

The D2PAK package features a thermally optimized mounting base electrically connected to drain, with R_th(j-mb) = 0.55 K/W and internal inductances LD = 2.5 nH and LS = 7.5 nH. The source-drain body diode exhibits V_SD = 0.85 V at I_S = 25 A and t_rr = 85 ns under specified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum continuous drain-source blocking voltage, suitable for 12 V/24 V automotive systems with transient margin.
R_DS(on)	5.8 mΩ (typ) at V_GS = 5 V, I_D = 50 A, T_j = 25 °C - Enables <1 W conduction loss at 100 A, critical for high-efficiency motor control.
I_D	140 A (continuous, T_mb = 25 °C) - High-current capability limited by package thermal design, not die area alone.
TSD Coefficient	−1.54 mV/K - Linear forward-voltage drift of integrated temperature diode, enabling ±1.5 °C thermal monitoring accuracy over −55 to +175 °C.
V_GS(th)	1.5 V (typ) at I_D = 1 mA - Ensures full enhancement with standard logic-level MCU outputs, eliminating external gate drivers.
ESD Rating	6 kV HBM - Integrated protection diodes eliminate need for external TVS in gate path for typical automotive board-level ESD events.
P_tot	272 W at T_mb = 25 °C - High power dissipation enabled by low R_th(j-mb) = 0.55 K/W and metal-mounting base.

Pinout & Package

Package: D2PAK (SOT426), plastic single-ended surface-mounted package with 5 leads (one lead cropped); mounting base electrically tied to drain terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control input for MOSFET channel; logic-level compatible (V_GS(th) = 1.5 V typ); requires no external level shifter.
2	A (Anode)	Anode of integrated ESD protection diode between gate and source; connects to source when clamping negative transients.
3	D (Drain)	Main high-side power terminal; internally bonded to mounting base for thermal and electrical connection to PCB copper pour.
4	K (Cathode)	Cathode of integrated ESD protection diode between gate and source; also used as cathode for temperature sense diode.
5	S (Source)	Power return path and reference node for gate drive; forms cathode-anode pair with Pin 4 for TSD measurement.

Key Features

Feature	Design Value
Integrated temperature sensing diode	Monolithic TSD with −1.54 mV/K coefficient and 25–50 mV hysteresis enables real-time junction temperature monitoring without external sensors.
AEC-Q101 qualification	Qualified per automotive reliability standard for mission-critical applications including EPAS and brake-by-wire subsystems.
TrenchPLUS technology	Optimized trench gate structure achieves 5.8 mΩ R_DS(on) at 5 V drive while maintaining rugged short-circuit withstand capability.
Bidirectional ESD protection	On-chip gate-source diodes rated for 6 kV HBM provide system-level ESD immunity without adding discrete TVS components.
Logic-level gate drive	V_GS(th) = 1.5 V typ allows direct interfacing with 3.3 V/5 V MCUs, reducing bill-of-materials and layout complexity.

Applications

Electrical Power Assisted Steering (EPAS)

Protected Lamp Drive

Use Scenario: High-current motor phase switching in 12 V/24 V EPAS modules requiring precise torque control and thermal derating.

IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration, handling up to 140 A continuous current with integrated thermal feedback.

Use Value: On-die temperature sensing enables dynamic current limiting before junction overheating, improving system safety and longevity.

Use Scenario: Driving high-wattage incandescent or halogen lamps in automotive lighting with inrush current and load-dump protection.

IC Role / Device Role / Timing Role: High-side load switch with integrated ESD diodes protecting against cable-disconnect transients and hot-plug events.

Use Value: Eliminates need for external flyback diodes and TVS devices, reducing footprint and failure points in lamp driver PCBs.

12 V/24 V High-Power Motor Drives

Automotive General-Purpose Power Switching

Use Scenario: PWM-controlled DC motors in HVAC blowers, radiator fans, and window lift systems operating at ambient temperatures up to 105 °C.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch delivering >95 % efficiency at 50–100 A loads with minimal heatsinking.

Use Value: 7 mΩ R_DS(on) at 5 V drive reduces conduction losses by >30 % versus comparable 10 V gate-threshold FETs, lowering thermal design burden.

Use Scenario: Centralized power distribution units (PDUs) managing multiple 12 V loads such as infotainment, ADAS cameras, and telematics modules.

IC Role / Device Role / Timing Role: AEC-Q101-compliant load switch providing controlled turn-on/turn-off, overtemperature shutdown, and fault reporting via TSD voltage.

Use Value: Dual functionality (power switching + thermal monitoring) consolidates two functions into one component, simplifying BOM and diagnostic architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 2.2 mΩ R_DS(on) @ 10 V, no integrated TSD or ESD diodes; requires external protection and thermal sensor.	Higher efficiency at 10 V gate drive but lacks automotive-grade thermal monitoring and built-in ESD robustness.	Select when maximum R_DS(on) performance is prioritized and external protection/sensing circuitry is acceptable.
Infineon IPP040N04L	40 V V_DS, 3.4 mΩ R_DS(on) @ 4.5 V, no TSD, 2 kV HBM ESD rating; smaller TO-252 package.	Lower voltage rating limits use to 12 V systems only; insufficient for 24 V EPAS or load-dump tolerant lamp drives.	Choose for cost-sensitive 12 V non-critical applications where thermal monitoring and 6 kV ESD are not required.

Compared with STL220N6F7 and IPP040N04L, BUK9107-55ATE,118 uniquely combines 55 V rating, logic-level drive, integrated TSD, and 6 kV ESD in a single D2PAK package-enabling simplified, AEC-Q101-compliant designs for safety-critical automotive power stages without external protection or sensing components.

Availability

BUK9107-55ATE,118 is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), protected lamp drive, and 12 V/24 V high-power motor drives requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK9107-55ATE,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

BUK9107-55ATE,118 belongs to NXP's TrenchPLUS automotive power MOSFET product line, engineered specifically for high-reliability, thermally aware power switching in safety-critical vehicle subsystems.

FAQ

What is the function of pins 2 (A) and 4 (K) on the BUK9107-55ATE,118?

Pins 2 (A) and 4 (K) form the anode and cathode of an integrated bidirectional ESD protection diode between gate and source. During negative transients, current flows from source (pin 5) to anode (pin 2); during positive transients, current flows from cathode (pin 4) to gate (pin 1). They also serve as the cathode-anode pair for the integrated temperature sense diode, enabling junction temperature measurement using external biasing.

Can the BUK9107-55ATE,118 be used without a heatsink in a 100 A continuous application?

No. At 100 A continuous with R_DS(on) ≈ 7 mΩ, conduction loss is ~70 W. With R_th(j-mb) = 0.55 K/W and ambient at 85 °C, junction temperature would exceed 175 °C even with ideal mounting. A heatsink or large copper pour is mandatory; derating to ≤75 A is recommended for T_mb ≤ 100 °C per datasheet Figure 2.

How is the temperature sense diode calibrated and what accuracy can be expected?

The TSD is calibrated at 25 °C with VF = 658 mV (typ) and SF = −1.54 mV/K (typ). Accuracy depends on external current source stability (IF = 250 µA) and ADC resolution; typical system-level accuracy is ±1.5 °C over −40 to +150 °C when using 12-bit sampling and linear compensation for hysteresis (25–50 mV).

Does the BUK9107-55ATE,118 support paralleling for higher current capacity?

Yes, but with strict layout requirements: matched gate drive impedance, symmetrical thermal coupling to mounting base, and individual source inductance minimization. The device's positive R_DS(on) temperature coefficient (see Figure 8) ensures inherent current sharing, but gate charge mismatch (Q_G(tot) = 108 nC typ) requires careful gate driver sizing to avoid oscillation during turn-on.

BUK9107-55ATE,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 108 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 5836 pF @ 25 V

FET Feature:: Temperature Sensing Diode

Power Dissipation (Max):: 272W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK9107-55ATE,118 FAQ

1.How can I place an order for BUK9107-55ATE,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9107-55ATE,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9107-55ATE,118 reliable?

The price and inventory of BUK9107-55ATE,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9107-55ATE,118 is usually 5 days.

3.What payment methods are accepted for BUK9107-55ATE,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9107-55ATE,118 transactions.

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4.How is shipping managed for BUK9107-55ATE,118?

BUK9107-55ATE,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9107-55ATE,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9107-55ATE,118?

For technical support, including BUK9107-55ATE,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9107-55ATE,118 requirements.

6.How does Aetrix verify that BUK9107-55ATE,118 is sourced from the original manufacturer or authorized distributors?

All BUK9107-55ATE,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9107-55ATE,118 meets industry standards.

7.What is the process for return or replacement of BUK9107-55ATE,118?

All BUK9107-55ATE,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9107-55ATE,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9107-55ATE,118 part is unused and in its original packaging.

Return procedure for BUK9107-55ATE,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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