NXP Semiconductors BUK9213-30A,118
- Part No.:
- BUK9213-30A,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
BUK9213-30A,118.pdf
- Description:
- MOSFET N-CH 30V 55A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,621
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK9213-30A from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 30 V drain-source voltage, 75 A continuous drain current at 25 °C mounting base temperature, and 150 W total power dissipation. It delivers 9–11 mΩ RDS(on) at VGS = 10 V and 25 A, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for automotive critical power switching.
For engineers reviewing the BUK9213-30A datasheet, BUK9213-30A pinout, BUK9213-30A application, or BUK9213-30A equivalent, this page provides verified technical context, thermal design guidance, gate-drive compatibility with 4.5–5 V logic controllers, and validated alternatives for 12 V automotive load switching in motors, lamps, and solenoids.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and robust avalanche ruggedness (467 mJ), enabling reliable operation under inductive load switching transients. Its gate threshold voltage ranges from 0.5 V (at 175 °C) to 2.3 V (at –55 °C), ensuring stable turn-on across automotive temperature extremes.
The integrated source-drain diode supports freewheeling in H-bridge and relay drive topologies, with 0.85–1.2 V forward voltage at 15 A and 55 ns reverse recovery time. Thermal resistance from junction to mounting base is 0.56 K/W typical, supporting high-power dissipation when mounted on thermally optimized PCB copper areas.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 12 V automotive systems with margin for load-dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - enables high-current motor and lamp loads without external heatsinking at ambient conditions. |
| RDS(on) | 11 mΩ max at VGS = 5 V, ID = 25 A, Tj = 25 °C - ensures low conduction loss with standard 5 V microcontroller GPIO drive. |
| Tj max | 175 °C - allows operation in engine bay and under-hood environments without derating below specification limits. |
| Rth(j-mb) | 0.56 K/W typical - enables efficient heat transfer to PCB copper or heatsink via mounting base, critical for sustained 54 A operation at Tmb = 100 °C. |
| EAS | 467 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events in solenoid and relay drivers. |
| QG(tot) | 37 nC typical - determines gate drive power and switching speed; compatible with standard MOSFET drivers like NXP's PCA9406. |
Pinout & Package
DPAK (SOT428) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal for low-inductance, high-current path and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; accepts 4.5–5 V drive directly from MCU GPIO; threshold voltage shifts predictably with temperature (0.5–2.3 V range). |
| 2 (D) | Drain | Main high-side or low-side power path; internally bonded to mounting base for thermal and electrical connection to heatsink or PCB copper pour. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configuration; forms common node with internal body diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, lighting, and chassis systems per stress test requirements. |
| Logic-level gate drive | Guaranteed turn-on with 4.5 V VGS; eliminates need for gate driver ICs in 5 V MCU-based designs, reducing BOM count and layout complexity. |
| 175 °C junction rating | Enables uninterrupted operation in under-hood environments where ambient temperatures exceed 105 °C and thermal cycling is severe. |
| Low RDS(on) at 5 V | 13 mΩ max at VGS = 5 V, ID = 25 A, Tj = 25 °C - minimizes I²R losses in battery-powered and efficiency-sensitive 12 V systems. |
| High avalanche energy | 467 mJ EAS - protects against destructive voltage spikes during inductive load turn-off without external snubbers in motor and solenoid circuits. |
Applications
| Automotive Lighting Control | Engine Bay Solenoid Driver |
|---|---|
|
Use Scenario: Switching 12 V halogen or LED headlamps with PWM dimming and overcurrent protection. IC Role / Device Role / Timing Role: Low-side power switch controlling lamp current path; handles repetitive 75 A inrush during cold filament startup. Use Value: 11 mΩ RDS(on) at 5 V gate drive reduces thermal rise during PWM duty cycles >90 %, eliminating need for active cooling in compact headlamp modules. |
Use Scenario: Driving fuel injector or transmission solenoid coils requiring fast, robust 12 V switching with flyback energy handling. IC Role / Device Role / Timing Role: High-energy clamping switch; absorbs unclamped inductive kickback during coil de-energization. Use Value: 467 mJ avalanche energy rating ensures single-pulse survivability without external TVS, simplifying PCB layout and improving long-term reliability in harsh vibration environments. |
| 12 V DC Motor Starter | Body Control Module Load Switch |
|
Use Scenario: Controlling starter motor auxiliary circuits or small blower motors in HVAC systems. IC Role / Device Role / Timing Role: High-current, thermally resilient power switch operating continuously at 54 A with Tmb = 100 °C. Use Value: 0.56 K/W Rth(j-mb) enables direct mounting to thick copper planes, sustaining full-rated current without thermal shutdown in space-constrained modules. |
Use Scenario: Managing power distribution to door locks, window lifters, and mirror actuators in centralized body control units. IC Role / Device Role / Timing Role: Protected load switch with built-in thermal and overcurrent robustness; interfaces directly with 5 V CAN/LIN microcontrollers. Use Value: AEC-Q101 qualification and 175 °C operation guarantee functional safety compliance and zero field failures across vehicle lifetime under repeated thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A rated, DFN5x6 package; lower RDS(on) (1.2 mΩ @ 10 V) but requires 10 V gate drive for full performance; no AEC-Q101 certification. | Higher current capacity suits larger motors but lacks automotive qualification; unsuitable for safety-critical modules without additional validation. | Select only for non-automotive industrial 12 V systems where AEC-Q101 is not mandated and PCB space allows DFN5x6 footprint. |
| ON Semiconductor NTMFS4C09NT1G | 30 V, 75 A, SO-8FL package; RDS(on) = 10.5 mΩ @ 4.5 V; AEC-Q101 qualified; thermal resistance Rth(j-a) = 40 K/W (vs. 71.4 K/W for BUK9213-30A) but lower mounting-base thermal path due to lack of exposed drain pad. | Better ambient-air cooling but inferior board-level heat extraction; limited to lower-duty-cycle loads unless actively cooled. | Prefer for space-constrained PCBs with forced airflow; avoid in thermally isolated under-hood locations where mounting-base conduction is primary cooling path. |
Compared with STL220N3LLH6 and NTMFS4C09NT1G, the BUK9213-30A uniquely combines AEC-Q101 qualification, DPAK mounting-base thermal conduction, and guaranteed 5 V logic-level operation-making it the only option among the three suitable for uncooled, safety-critical 12 V automotive load switching where thermal mass and reliability are prioritized over peak current density.
Availability
BUK9213-30A is available at Aetrix Electronics and suitable for automotive lighting control, engine bay solenoid actuation, and 12 V DC motor starter applications requiring stable component supply across extended production lifecycles.
Supply support for BUK9213-30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK9213-30A belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for automotive-grade 12 V power switching where reliability under thermal stress, gate-drive simplicity, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current for BUK9213-30A at 100 °C mounting base temperature?
The BUK9213-30A supports 54 A continuous drain current at Tmb = 100 °C with VGS = 5 V, as specified in Table 4 (Limiting Values). This rating is constrained by bondwire current limits-not thermal dissipation-and remains valid up to the 175 °C junction temperature limit. The BUK9213-30A maintains safe operation under sustained high-current conditions in engine compartment environments when properly mounted.
Is BUK9213-30A suitable for use with 3.3 V microcontroller GPIOs?
No, the BUK9213-30A is not guaranteed to fully enhance with 3.3 V gate drive. Its RDS(on) is characterized at VGS = 4.5 V and 5 V, with 14.4 mΩ max at 4.5 V. At 3.3 V, the device operates in the sub-threshold region (see Figure 7), resulting in significantly higher on-resistance and unpredictable switching behavior. The BUK9213-30A requires ≥4.5 V gate drive for reliable logic-level operation in production systems.
Does BUK9213-30A include an integrated body diode, and what are its key parameters?
Yes, the BUK9213-30A integrates a source-drain body diode with VSD = 0.85–1.2 V at IS = 15 A and Tj = 25 °C (Table 6), and reverse recovery time trr = 55 ns under specified test conditions. This diode supports freewheeling in low-side switch configurations and is rated for 75 A continuous source current at Tmb = 25 °C. The BUK9213-30A body diode enables simplified H-bridge and relay driver designs without external diodes.
What is the thermal resistance from junction to mounting base for BUK9213-30A, and how does it impact PCB layout?
The BUK9213-30A has a typical Rth(j-mb) of 0.56 K/W (Table 5), measured from silicon junction to the exposed mounting base (drain-connected tab). This low value mandates direct thermal coupling to large copper pours or heatsinks via the mounting base. PCB layout must allocate ≥200 mm² of 2-oz copper connected to pin 2 (drain) and the mounting base area; insufficient copper increases junction temperature and risks exceeding the 175 °C limit. The BUK9213-30A's thermal performance is critically dependent on this interface.
How does the avalanche ruggedness of BUK9213-30A compare to standard industrial MOSFETs?
The BUK9213-30A specifies 467 mJ non-repetitive drain-source avalanche energy (EAS) under defined test conditions (ID = 55 A, Vsup ≤30 V, unclamped), which exceeds typical industrial MOSFETs by 2–3×. This ruggedness is achieved through TrenchMOS process optimization and is validated per AEC-Q101 stress testing. In practice, the BUK9213-30A reliably survives inductive turn-off transients in automotive solenoid and motor circuits without external clamping components-unlike most non-automotive MOSFETs that require TVS diodes or RC snubbers. The BUK9213-30A's avalanche rating is a design-critical parameter for under-hood reliability.
BUK9213-30A,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2852 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
BUK9213-30A,118 FAQ
1.How can I place an order for BUK9213-30A,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9213-30A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9213-30A,118 reliable?
The price and inventory of BUK9213-30A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9213-30A,118 is usually 5 days.
3.What payment methods are accepted for BUK9213-30A,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9213-30A,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9213-30A,118?
BUK9213-30A,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9213-30A,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9213-30A,118?
For technical support, including BUK9213-30A,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9213-30A,118 requirements.
6.How does Aetrix verify that BUK9213-30A,118 is sourced from the original manufacturer or authorized distributors?
All BUK9213-30A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9213-30A,118 meets industry standards.
7.What is the process for return or replacement of BUK9213-30A,118?
All BUK9213-30A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9213-30A,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9213-30A,118 part is unused and in its original packaging.
Return procedure for BUK9213-30A,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK9213-30A,118 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

