Nexperia USA Inc. BUK9230-100B,118
- Part No.:
- BUK9230-100B,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
BUK9230-100B,118.pdf
- Description:
- MOSFET N-CH 100V 47A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,822
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Product details
Overview
BUK9230-100B,118 from Nexperia is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 100 V VDS, 47 A continuous drain current at Tmb = 25 °C, and 185 °C junction temperature. It features 25 mΩ RDS(on) at VGS = 5 V and ID = 25 A (Tj = 25 °C), AEC-Q101 qualified for automotive critical systems including 12 V/24 V load switching and solenoid control.
For engineers reviewing the BUK9230-100B,118 datasheet, BUK9230-100B,118 pinout, BUK9230-100B,118 application, or BUK9230-100B,118 equivalent, this device supports thermally demanding automotive power switching where low gate drive voltage compatibility (≤5 V), avalanche ruggedness (150 mJ), and mounting-base thermal resistance (0.95 K/W) are decisive selection criteria.
Technical Context
This FET employs TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility-VGS(th) as low as 0.4 V at Tj = 185 °C and 1.1–2.0 V typical at 25 °C. Its unclamped avalanche rating of 150 mJ enables robust operation under inductive switching stress without external snubbers.
The device integrates a source-drain diode with 0.85–1.2 V forward voltage at 25 A and 114 ns reverse recovery time, supporting synchronous rectification and freewheeling in motor drives. Thermal design centers on the mounting base (pin 2/D and mb), which is electrically connected to drain and provides direct thermal path to heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/24 V automotive bus protection and load isolation. |
| ID (continuous) | 47 A at Tmb = 25 °C - Enables high-current DC loads (e.g., headlamps, fuel pumps) without forced air cooling. |
| RDS(on) | 25 mΩ @ VGS = 5 V, ID = 25 A, Tj = 25 °C - Minimizes conduction loss (≤3.1 W at 25 A), reducing thermal footprint. |
| EAS | 150 mJ unclamped avalanche energy - Sustains inductive kickback from solenoids/motors without failure during PWM switching. |
| Rth(j-mb) | 0.95 K/W - Enables efficient heat transfer from die to PCB/heatsink via mounting base, critical for compact automotive modules. |
| VGS(th) | 1.1–2.0 V typical @ Tj = 25 °C - Ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIOs. |
| QGD | 13 nC - Limits Miller-induced turn-off delay, supporting >100 kHz PWM in motor control applications. |
Pinout & Package
Package: DPAK (SOT428), plastic surface-mount with 3 leads (lead 2 cropped); mounting base (mb) is integral to the drain terminal and serves as primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; accepts 3.3 V/5 V drive; low QG (33 nC) enables fast switching with minimal driver loss. |
| 2 (D) / mb | Drain & Mounting Base | High-side power node and thermal conduction path; electrically tied to drain; requires soldered thermal pad to PCB copper pour or heatsink. |
| 3 (S) | Source | Power return path; referenced to ground in low-side switch configuration; internal source inductance 7.5 nH affects high-di/dt ringing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical functions including engine control, body electronics, and ADAS power stages. |
| 185 °C maximum junction temperature | Supports operation in under-hood environments (e.g., near exhaust manifolds or ECUs) without derating at ambient up to 125 °C. |
| Low RDS(on) at 5 V VGS | 25 mΩ enables <1.6 W conduction loss at 25 A, reducing heatsink size and system cost in space-constrained modules. |
| Unclamped avalanche capability | 150 mJ rating allows reliable operation in inductive load switching without external clamping components. |
| TrenchMOS architecture | Delivers superior cell density and lower gate charge vs planar MOSFETs, improving efficiency in high-frequency PWM applications. |
Applications
| Automotive Lighting Control | Engine Management Solenoids |
|---|---|
|
Use Scenario: High-brightness LED headlamp dimming and HID ballast switching in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU PWM; handles 30–45 A peak currents during startup surges. Use Value: 25 mΩ RDS(on) limits thermal rise to <40 °C above ambient at 35 A, eliminating need for active cooling in headlamp ECU. |
Use Scenario: Fuel injector and EGR valve actuation in gasoline/diesel powertrains. IC Role / Device Role / Timing Role: High-speed, high-reliability switching element driven by dedicated solenoid driver ICs. Use Value: 150 mJ avalanche energy absorbs inductive flyback without snubber, enabling compact, high-density engine control modules. |
| Body Control Module Loads | Commercial Vehicle 24 V Systems |
|
Use Scenario: Power distribution for window lift motors, seat adjusters, and HVAC blowers in BCMs. IC Role / Device Role / Timing Role: Logic-level controlled power switch interfacing directly with 3.3 V/5 V microcontrollers. Use Value: VGS(th) ≤2.0 V ensures full enhancement across temperature (-40 to +185 °C), guaranteeing consistent turn-on in cold cranking. |
Use Scenario: Starter motor pre-engagement, air suspension compressors, and auxiliary power in trucks/buses. IC Role / Device Role / Timing Role: High-current, high-temperature power switch operating from 24 V nominal bus with ±30 % transients. Use Value: 100 V VDS rating withstands load-dump spikes up to 35 V, meeting ISO 7637-2 Pulse 5a requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, RDS(on) = 3.2 mΩ @ 10 V; requires 10 V gate drive for optimal performance; no AEC-Q101 certification. | Better suited for high-efficiency 48 V mild-hybrid inverters; not qualified for ASIL-B systems. | Select when higher current and lower RDS(on) justify gate driver complexity and non-automotive qualification. |
| IRF3205PBF | 55 V, 110 A, RDS(on) = 8 mΩ @ 10 V; VGS(th) = 2–4 V; not AEC-Q101; TO-220 package. | Limited to 12 V systems; lacks thermal performance (Rth(j-c) ≈ 1.5 K/W) and automotive reliability validation. | Choose only for cost-sensitive industrial prototypes where qualification and thermal constraints are relaxed. |
Compared with STL220N10F7 and IRF3205PBF, BUK9230-100B,118 uniquely balances AEC-Q101 compliance, 5 V logic-level drive, 100 V rating, and DPAK thermal performance-making it the only drop-in solution for production automotive 12 V/24 V load switches requiring zero qualification overhead.
Availability
BUK9230-100B,118 is available at Aetrix Electronics and suitable for automotive lighting control, engine management solenoids, and body control module loads requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BUK9230-100B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK9230-100B,118 belongs to Nexperia's Automotive Logic-Level Power MOSFET family, engineered specifically for robust, thermally efficient switching in 12 V/24 V/42 V automotive subsystems under harsh environmental conditions.
FAQ
Is BUK9230-100B,118 suitable for high-frequency PWM motor control?
Yes. With QGD = 13 nC, QG(tot) = 33 nC, and tf = 46 ns, it supports clean switching up to 200 kHz in brushed DC motor drivers. Its low Crss (81–110 pF) minimizes Miller effect, and the 185 °C rating maintains RDS(on) stability across wide thermal swings during sustained PWM operation.
What is the role of the mounting base (mb) in thermal management?
Mounting base (mb) is electrically connected to drain (pin 2) and forms the primary thermal interface between the silicon die and PCB/heatsink. With Rth(j-mb) = 0.95 K/W, it delivers 3× better thermal performance than standard SO-8 packages-requiring ≥100 mm² exposed copper area and ≥2 oz copper thickness for optimal heat dissipation in automotive modules.
Does BUK9230-100B,118 require a gate resistor for automotive EMI compliance?
Yes. A 10 Ω series gate resistor is recommended per datasheet test conditions (td(on)/td(off) characterization). This value damps ringing caused by LS = 7.5 nH and LD = 2.5 nH, ensuring CISPR 25 Class 5 radiated emissions compliance in 12 V battery systems without compromising switching speed.
How does its avalanche ruggedness compare to standard industrial MOSFETs?
At 150 mJ unclamped avalanche energy, BUK9230-100B,118 exceeds typical industrial MOSFETs (often <50 mJ) by 3×. This is validated per AEC-Q101 stress testing and enables safe operation during worst-case inductive turn-off events-such as sudden solenoid de-energization-without external TVS or clamp diodes.
BUK9230-100B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3805 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 167W (Tc)
- Operating Temperature:
- -55°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
BUK9230-100B,118 FAQ
1.How can I place an order for BUK9230-100B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9230-100B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BUK9230-100B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9230-100B,118 is usually 5 days.
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6.How does Aetrix verify that BUK9230-100B,118 is sourced from the original manufacturer or authorized distributors?
All BUK9230-100B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9230-100B,118 meets industry standards.
7.What is the process for return or replacement of BUK9230-100B,118?
All BUK9230-100B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9230-100B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9230-100B,118 part is unused and in its original packaging.
Return procedure for BUK9230-100B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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