NXP Semiconductors BUK9240-100A/C1,11

Overview

BUK9240-100A/C1,11 from Nexperia is a logic-level N-channel TrenchMOS FET designed for automotive power switching, featuring 100 V drain-source voltage rating, 33 A continuous drain current at 5 V gate drive, 34–40 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, 175 °C maximum junction temperature, and AEC-Q101 qualification. It serves as a robust high-side or low-side switch in 12 V/24 V vehicle subsystems.

For engineers reviewing the BUK9240-100A/C1,11 datasheet, BUK9240-100A/C1,11 pinout, BUK9240-100A/C1,11 application, or BUK9240-100A/C1,11 equivalent, this page delivers verified package mapping (SOT428/DPAK), validated thermal resistance (R_th(j-mb) = 1.3 K/W), avalanche energy rating (31 mJ), gate threshold behavior across temperature, and real-world switching timing (t_d(on) = 20 ns, t_r = 135 ns).

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility-enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting. Its internal mounting base is electrically connected to the drain, supporting efficient heatsinking in high-power automotive modules.

The BUK9240-100A/C1,11 integrates an intrinsic body diode with 0.85–1.2 V forward voltage at 25 A and exhibits unclamped avalanche ruggedness up to 31 mJ, enabling reliable operation under inductive load switching transients. Dynamic parameters-including C_iss = 2304–3072 pF and Q_G ≈ 60 nC-are specified at 25 °C and support predictable gate driver sizing.

Key Specifications

Pinout & Package

Package: SOT428 (DPAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically tied to drain terminal for low-inductance thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power switching applications.

Compared with STL220N10F7 and IRF3205PBF, the BUK9240-100A/C1,11 uniquely combines AEC-Q101 compliance, true logic-level operation down to 4.5 V, 100 V rating, and DPAK thermal performance-making it the only drop-in solution for automotive 12 V/24 V MCU-driven power switches requiring zero gate boost and under-hood reliability.

Availability

BUK9240-100A/C1,11 is available at Aetrix Electronics and suitable for automotive lighting control, engine management solenoid drive, and body control module loads requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BUK9240-100A/C1,11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The BUK9240-100A/C1,11 belongs to Nexperia's TrenchMOS logic-level automotive power FET family, engineered specifically for robust, low-loss switching in harsh-temperature vehicle subsystems without gate voltage translation.

FAQ

What is the maximum gate-source voltage rating for BUK9240-100A/C1,11?

The BUK9240-100A/C1,11 has a continuous gate-source voltage rating of ±10 V and a pulsed peak rating of ±15 V (tp ≤ 50 µs). Exceeding ±10 V continuously risks gate oxide degradation, while transient spikes up to ±15 V are tolerated within strict pulse-width limits. This specification ensures compatibility with standard 5 V logic drivers while allowing margin for minor noise coupling.

Is BUK9240-100A/C1,11 suitable for high-side switching configurations?

Yes, BUK9240-100A/C1,11 supports high-side switching due to its 100 V V_DS rating and logic-level gate threshold (1.0–2.0 V at 25 °C). However, because its mounting base is internally connected to the drain, proper isolation of the heatsink from system ground is required. Gate drive must provide sufficient voltage relative to the source-typically via a charge pump or isolated driver for 12 V/24 V rails.

How does the R_DS(on) of BUK9240-100A/C1,11 vary with temperature and gate voltage?

At V_GS = 5 V and I_D = 25 A, R_DS(on) is 34–40 mΩ at T_j = 25 °C but rises to ≤100 mΩ at T_j = 175 °C. At V_GS = 4.5 V, R_DS(on) increases to 44.6 mΩ (typ) at 25 °C-confirming stable enhancement down to 4.5 V, critical for marginal supply conditions in automotive systems.

Does BUK9240-100A/C1,11 include integrated ESD protection?

No, the BUK9240-100A/C1,11 does not integrate dedicated ESD protection circuitry. It meets HBM ESD classification per JESD22-A114 (≥2 kV), but external TVS diodes or RC filters are recommended on gate and drain lines in automotive environments subject to ISO 10605 discharge events or load dump transients.

What is the safe operating area (SOA) limitation for BUK9240-100A/C1,11 at 100 V drain-source voltage?

At V_DS = 100 V, the BUK9240-100A/C1,11 supports ≤1.5 A continuous drain current (derated from 33 A at low V_DS) due to thermal and secondary breakdown constraints. The SOA curve (Figure 3) confirms 10 ms pulse capability up to ~15 A and 100 µs pulses up to ~60 A-validating suitability for short-duration inductive switching events.