NXP Semiconductors BUK9506-55A,127

Overview

BUK9506-55A from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ logic-level power MOSFET in SOT78 (TO-220AB) package, rated for 55 V drain-source voltage, 154 A DC drain current at T_mb = 25 °C and V_GS = 5 V, with typical R_DS(on) of 5.3 mΩ at 25 °C and 5 V gate drive. It serves as a high-current, low-loss switching element in 12 V/24 V automotive power distribution systems.

For engineers reviewing the BUK9506-55A datasheet, BUK9506-55A pinout, BUK9506-55A application, or BUK9506-55A equivalent, this page delivers verified electrical specs, thermal behavior, mounting-base–referenced SOA, Q101 compliance status, and validated alternatives for automotive-grade power switching design.

Technical Context

The BUK9506-55A employs TrenchMOS™ technology to achieve ultra-low on-resistance while maintaining robust avalanche ruggedness (1.1 J unclamped inductive energy). Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V at 25 °C, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

Thermal performance is defined relative to the mounting base (R_th(j-mb) = 0.5 K/W), not ambient - critical for heatsink-integrated designs. The device supports pulsed peak currents up to 616 A (t_p ≤ 10 µs) and operates continuously up to 175 °C junction temperature, meeting AEC-Q101 stress test requirements.

Key Specifications

Pinout & Package

SOT78 (TO-220AB) plastic single-ended package with isolated mounting base electrically connected to drain; requires mechanical mounting via screw through base for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP160N55F7 and IRF1404ZLPbF, the BUK9506-55A uniquely combines AEC-Q101 qualification, true logic-level compatibility (≤2 V V_GS(th)), and 55 V rating in a standard TO-220AB - making it the only drop-in solution for safety-critical 24 V automotive switching where gate drive headroom is constrained.

Availability

BUK9506-55A is available at Aetrix Electronics and suitable for automotive body control modules, commercial vehicle power distribution units, and industrial solenoid drivers requiring stable component supply across multi-year production cycles.

Supply support for BUK9506-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on automotive, industrial & IoT, mobile, and communication infrastructure applications, with deep heritage in power management and automotive-grade components.

The BUK9506-55A belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-reliability 12 V/24 V automotive power switching where low R_DS(on), AEC-Q101 compliance, and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for BUK9506-55A at 100 °C mounting base temperature?

The BUK9506-55A supports 75 A continuous drain current at T_mb = 100 °C and V_GS = 5 V, as specified in Table 3 (Limiting Values). This limit is package-constrained, not chip-limited - the die itself can handle higher current, but thermal resistance from junction to mounting base (0.5 K/W) and package construction cap sustained current at elevated base temperatures. Always consult Figure 2 for derating curves.

Is BUK9506-55A qualified to AEC-Q101, and what does that mean for automotive use?

Yes, the BUK9506-55A is explicitly stated as Q101 compliant in its Features section. AEC-Q101 qualification means the device has passed accelerated stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and human-body-model ESD - confirming suitability for automotive power electronics where reliability under thermal, mechanical, and electrical stress is non-negotiable.

Can BUK9506-55A be driven directly by a 3.3 V microcontroller GPIO pin?

Yes - the BUK9506-55A has a gate threshold voltage (V_GS(th)) of 1.0–2.0 V at 25 °C, and achieves full enhancement at V_GS = 4.5 V. While 3.3 V is below the 4.5 V recommended for lowest R_DS(on), the device will still conduct with R_DS(on) ≈ 6.7 mΩ (per Table 5), delivering ~100 A at T_mb = 25 °C. For optimal efficiency, pair with a 3.3 V–compatible gate driver like NXP's NX3008PB.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for BUK9506-55A, and why is it important?

The BUK9506-55A has R_th(j-mb) = 0.5 K/W, per Table 4. This parameter defines how effectively heat flows from the silicon die to the heatsink-mounted base - it is far more relevant than junction-to-ambient for TO-220AB devices because the mounting base is the primary thermal interface. Accurate thermal design requires using R_th(j-mb) + R_{th(mb-heatsink)} + R_{th(heatsink-ambient)} to calculate total thermal resistance.

Does BUK9506-55A include an integrated body diode, and what are its key characteristics?

Yes, the BUK9506-55A integrates a source-drain body diode. Key specs include forward voltage V_SD = 0.85–1.2 V at I_S = 30 A and reverse recovery time t_rr = 80 ns (typical), with recovered charge Q_r = 200 nC. These values indicate a moderately fast, low-loss diode suitable for freewheeling in inductive loads like solenoids and motors - though external Schottky diodes may be preferred for ultra-high-frequency PWM.