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NXP Semiconductors BUK9506-55B,127
- Part No.:
- BUK9506-55B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9506-55B,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,526
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Product details
Overview
BUK9506-55B from NXP Semiconductors is an AEC-Q101 qualified N-channel TrenchMOS FET in TO-220AB (SOT78) package, rated for 55 V drain-source voltage, 75 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation. It delivers low on-state resistance (4.8 mΩ typ. at VGS = 10 V), supports logic-level gate drive (VGS(th) = 1.5 V typ.), and is engineered for automotive power switching of 12 V/24 V loads including motors and solenoids.
For engineers reviewing the BUK9506-55B datasheet, BUK9506-55B pinout, BUK9506-55B application, or BUK9506-55B equivalent, key selection criteria include its 0.58 K/W junction-to-mounting-base thermal resistance, non-repetitive avalanche energy rating of 679 mJ, suitability for thermally demanding environments up to 175 °C, and compliance with automotive reliability standards.
Technical Context
This discrete MOSFET uses NXP's TrenchMOS technology to achieve low RDS(on) while maintaining robust avalanche ruggedness. Its gate threshold voltage (1.1–2.0 V at 25 °C) enables direct compatibility with 3.3 V and 5 V logic controllers, and its internal drain/source inductances (LD = 3.5–4.5 nH, LS = 7.5 nH) are specified for accurate switching loss modeling.
The device features a mounting base electrically connected to the drain terminal, enabling efficient heatsinking. Its safe operating area (SOA) is defined up to 10 µs pulse width with peak drain current of 587 A, and it includes an integrated body diode with 0.85–1.2 V forward voltage at 25 A and 64 ns reverse recovery time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - defines maximum blocking voltage in 12 V/24 V automotive systems without derating. |
| RDS(on) | 4.8 mΩ typical at VGS = 10 V, 25 °C - enables <1.2 W conduction loss at 75 A DC, reducing heatsink requirements. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capability, not silicon. |
| Tj max | 175 °C - allows operation in under-hood environments without thermal shutdown. |
| EAS | 679 mJ non-repetitive avalanche energy - provides robustness against inductive load switching transients. |
| Rth(j-mb) | 0.58 K/W - enables high-power dissipation when mounted to external heatsink via mounting base. |
| QG(tot) | 60 nC typical - determines gate driver current requirement for <100 ns switching transitions. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (electrically connected to drain), 1 mounting hole, and 3 leads. Mounting base serves as primary thermal path and drain terminal connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≤15 V drive; threshold centered at 1.5 V for logic-level compatibility. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current drain return path. |
| 3 (S) | Source | Power return node; referenced for gate drive; internal source inductance (7.5 nH) impacts switching waveform fidelity. |
| Mounting base (mb) | Drain (common) | Electrically tied to drain pin 2; provides mechanical attachment and primary thermal interface to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control and chassis systems. |
| Logic-level gate drive | VGS(th) = 1.5 V typ. enables direct interfacing with microcontrollers and low-voltage drivers without level-shifting. |
| 175 °C junction rating | Supports sustained operation in high-ambient under-hood locations without thermal throttling or derating. |
| Low RDS(on) | 4.8 mΩ typ. minimizes I²R losses in high-current 12 V/24 V load switching, improving system efficiency. |
| Avalanche ruggedness | 679 mJ EAS ensures reliable turn-off into inductive loads (e.g., solenoids, motors) without external snubbers. |
Applications
| Automotive Engine Control | Commercial Vehicle Lighting |
|---|---|
Use Scenario: Switching fuel injectors and ignition coils in gasoline/diesel ECUs under high ambient temperature and vibration. IC Role / Device Role / Timing Role: High-side power switch handling pulsed 5–10 A loads at 12 V with fast turn-on/off timing. Use Value: 175 °C rating and AEC-Q101 qualification ensure long-term reliability; 679 mJ avalanche energy absorbs coil flyback energy. |
Use Scenario: PWM dimming and on/off control of LED headlamps and brake lights in trucks and buses. IC Role / Device Role / Timing Role: Low-loss power switch driving 10–30 A LED arrays with minimal thermal rise during duty cycling. Use Value: 4.8 mΩ RDS(on) reduces conduction loss and heat generation; TO-220AB mounting base enables direct heatsink integration. |
| Industrial Solenoid Actuation | Off-Highway Equipment Motor Control |
Use Scenario: Driving 24 V hydraulic solenoids in agricultural and construction machinery with frequent duty cycles. IC Role / Device Role / Timing Role: Robust power switch managing 15–25 A inductive loads with high dv/dt immunity. Use Value: Low gate charge (60 nC) enables fast switching; avalanche ruggedness prevents failure during solenoid de-energization. |
Use Scenario: Controlling 12 V/24 V DC motors in excavators, loaders, and material handlers exposed to dust, moisture, and shock. IC Role / Device Role / Timing Role: Main power switch in H-bridge or high-side configuration delivering up to 75 A peak current. Use Value: 0.58 K/W Rth(j-mb) allows effective thermal management on chassis-mounted heatsinks; 55 V rating covers battery surge conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF55-08 | 55 V, 75 A, RDS(on) = 8.5 mΩ @ 10 V; TO-220FP package; no AEC-Q101 qualification. | Not automotive-qualified; higher RDS(on) increases conduction loss by ~75% at 25 A. | Acceptable for industrial 24 V motor control where qualification and thermal performance are less critical. |
| IRF1404ZPBF | 40 V, 204 A, RDS(on) = 3.8 mΩ @ 10 V; TO-220AB; no AEC-Q101; lower voltage rating. | Unsuitable for 55 V surge conditions in automotive 12 V systems; higher current rating unused in most BUK9506-55B applications. | Only viable if system voltage is strictly ≤40 V and AEC-Q101 is not required; otherwise risk of overvoltage failure. |
Compared with STP75NF55-08 and IRF1404ZPBF, the BUK9506-55B uniquely combines AEC-Q101 qualification, 55 V rating, and 4.8 mΩ RDS(on) in TO-220AB - making it the only drop-in solution for thermally constrained automotive power switching where reliability and voltage margin are mandatory.
Availability
BUK9506-55B is available at Aetrix Electronics and suitable for automotive engine control, commercial vehicle lighting, and industrial solenoid actuation requiring stable component supply across extended production lifecycles.
Supply support for BUK9506-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BUK9506-55B belongs to NXP's TrenchMOS automotive power portfolio, designed specifically for high-reliability, high-current switching in harsh-temperature automotive subsystems such as body electronics and powertrain interfaces.
FAQ
What is the maximum continuous drain current rating for the BUK9506-55B?
The BUK9506-55B has a maximum continuous drain current of 75 A at Tmb = 25 °C, limited by the TO-220AB package thermal capability-not the silicon die. At higher mounting base temperatures, current must be derated per Figure 1 in the datasheet, with zero current allowed above 150 °C mounting temperature.
Is the BUK9506-55B suitable for logic-level gate drive?
Yes, the BUK9506-55B is explicitly designed for logic-level gate drive: its gate threshold voltage is 1.1–2.0 V at 25 °C, and it delivers full 75 A conduction with only 5 V gate drive. This allows direct interface with 3.3 V and 5 V microcontrollers without external level shifters or gate drivers.
Does the BUK9506-55B have AEC-Q101 qualification?
Yes, the BUK9506-55B is fully AEC-Q101 qualified, as confirmed in Section 1.2 of its official NXP datasheet. This qualification validates its reliability for automotive safety-critical applications including engine management, transmission control, and chassis systems.
What is the thermal resistance from junction to mounting base for the BUK9506-55B?
The BUK9506-55B has a maximum thermal resistance of 0.58 K/W from junction to mounting base (Rth(j-mb)). This low value reflects the direct thermal path from die to the electrically connected mounting base, enabling efficient heatsinking in space-constrained automotive modules.
Can the BUK9506-55B withstand avalanche energy events?
Yes, the BUK9506-55B is rated for 679 mJ of non-repetitive drain-source avalanche energy (EDS(AL)S) under specified test conditions (ID = 75 A, Vsup ≤ 55 V, RGS = 50 Ω). This ruggedness protects the device during inductive load turn-off transients common in motor and solenoid applications.
BUK9506-55B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7565 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 258W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9506-55B,127 FAQ
1.How can I place an order for BUK9506-55B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9506-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9506-55B,127 reliable?
The price and inventory of BUK9506-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9506-55B,127 is usually 5 days.
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BUK9506-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9506-55B,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9506-55B,127?
For technical support, including BUK9506-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9506-55B,127 requirements.
6.How does Aetrix verify that BUK9506-55B,127 is sourced from the original manufacturer or authorized distributors?
All BUK9506-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9506-55B,127 meets industry standards.
7.What is the process for return or replacement of BUK9506-55B,127?
All BUK9506-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9506-55B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9506-55B,127 part is unused and in its original packaging.
Return procedure for BUK9506-55B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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