Nexperia USA Inc. BUK9506-75B,127
- Part No.:
- BUK9506-75B,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9506-75B,127.pdf
- Description:
- MOSFET N-CH 75V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,704
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Product details
Overview
BUK9506-75B,127 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB package, rated for 75 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 300 W total power dissipation. It features 4.7 mΩ RDS(on) at VGS = 10 V and 25 °C, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for automotive load switching applications including motors, lamps, and solenoids in 12 V/24 V systems.
For engineers reviewing the BUK9506-75B,127 datasheet, BUK9506-75B,127 pinout, BUK9506-75B,127 application, or BUK9506-75B,127 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.1–2.0 V), low on-resistance under thermal stress, avalanche ruggedness (852 mJ), and mounting-base thermal resistance of 0.5 K/W - all critical for high-reliability automotive power switching designs.
Technical Context
This device employs TrenchMOS technology to achieve low RDS(on) while maintaining robust avalanche capability and stable threshold voltage across -55 °C to +175 °C. Its gate-source threshold voltage ranges from 0.5 V at 175 °C to 2.3 V at -55 °C, enabling reliable turn-on with standard 5 V microcontroller outputs even under extreme thermal conditions.
The internal drain and source inductances are tightly controlled (LD = 3.5–4.5 nH, LS = 7.5 nH), minimizing switching oscillation in high-di/dt automotive loads. Dynamic parameters include QG(tot) = 95 nC and QGD = 37 nC at VGS = 5 V, supporting efficient PWM control in motor drivers and DC-DC secondary-side switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V maximum - supports 42 V automotive systems with 75 % derating margin against transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capacity, not silicon. |
| RDS(on) | 4.7 mΩ typ at VGS = 10 V, 25 °C - enables <1.2 W conduction loss at 50 A, reducing heatsink size. |
| RDS(on) @ 175 °C | 12.8 mΩ max at VGS = 5 V - ensures functional gate drive margin under worst-case thermal stress. |
| EAS | 852 mJ non-repetitive avalanche energy - withstands inductive kickback from solenoid or motor turn-off without failure. |
| Rth(j-mb) | 0.5 K/W - allows direct mounting to chassis heatsink for high-power dissipation with minimal thermal interface resistance. |
| VGS(th) | 1.1–2.0 V at 25 °C - guarantees full enhancement with 3.3 V or 5 V logic-level drivers without level-shifting circuitry. |
Pinout & Package
Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Requires mechanical fastening via single mounting hole; leads are tinned except terminal zone per JEDEC SC-46 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input controlling channel conduction; requires ≤100 nA leakage drive at 15 V. |
| 2 (D) | Drain | Main high-side power path; electrically tied to mounting base for low-inductance heatsinking. |
| 3 (S) | Source | Power return node; referenced to system ground in low-side switch configurations. |
| Mounting Base (mb) | Drain extension | Provides primary thermal path to heatsink and contributes to low RDS(on) stability under thermal cycling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical functions including engine control, body electronics, and ADAS power stages. |
| Logic-level gate drive | Operates fully enhanced with 5 V MCU GPIO output, eliminating need for external gate drivers in cost-sensitive modules. |
| 175 °C junction rating | Enables operation in under-hood environments (e.g., near exhaust manifolds) without thermal shutdown or parameter drift. |
| Low RDS(on) at elevated Tj | 12.8 mΩ max at 175 °C and VGS = 5 V - maintains <2.5 W loss at 50 A, preserving efficiency in thermally constrained enclosures. |
| Avalanche ruggedness | 852 mJ unclamped EAS - absorbs inductive energy from 40 A solenoid de-energization without external snubbers. |
Applications
| Automotive Body Control Module (BCM) | 12 V/24 V DC Motor Driver |
|---|---|
Use Scenario: Switching headlamp, fog lamp, and interior lighting loads in modern BCMs with CAN/LIN communication. IC Role / Device Role / Timing Role: High-side load switch controlling 12 V incandescent/LED loads up to 75 A peak. Use Value: AEC-Q101 compliance ensures long-term reliability in vibration-prone vehicle environments; 5 V gate drive simplifies integration with 32-bit ARM-based BCM MCUs. |
Use Scenario: Driving brushed DC fans, radiator cooling pumps, and HVAC blower motors in passenger vehicles. IC Role / Device Role / Timing Role: Low-side PWM switch operating at 20 kHz with fast turn-on (68 ns td(on)) and low switching losses. Use Value: 0.5 K/W Rth(j-mb) enables direct bolt-down to aluminum chassis, eliminating discrete heatsinks and reducing BOM count by 2 components. |
| 42 V Mild Hybrid Starter-Generator Interface | Industrial Solenoid Actuator Driver |
Use Scenario: Controlling pre-charge and main contactor circuits in 42 V mild hybrid battery management systems. IC Role / Device Role / Timing Role: High-voltage, high-current power switch handling transient surges during battery connection/disconnection. Use Value: 75 V VDS rating provides 15 V margin above nominal 42 V bus, accommodating ISO 7637-2 pulse 5a (120 V) without clamping diodes. |
Use Scenario: Driving industrial pneumatic/hydraulic solenoid valves in factory automation controllers. IC Role / Device Role / Timing Role: Robust power switch managing 75 A inductive loads with fast recovery diode (68 ns trr) and 176 nC Qr. Use Value: Integrated source-drain diode eliminates need for external flyback diode; 852 mJ EAS prevents failure during rapid valve de-energization cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V/75 A, RDS(on) = 10.5 mΩ @ 10 V, no AEC-Q101 qualification, TO-220FP package (isolated tab). | Not suitable for automotive production; acceptable for industrial prototypes where qualification is not mandated. | Select only if AEC-Q101 is not required and higher RDS(on) is tolerable in thermal budget. |
| IRFB4115PBF | 150 V/110 A, RDS(on) = 5.5 mΩ @ 10 V, AEC-Q101 qualified, TO-220AB package, but VGS(th) = 2.0–4.0 V (not logic-level). | Requires 10 V gate drive; unsuitable for direct 5 V MCU interface without level-shifting. | Choose when higher voltage rating (150 V) is needed and gate driver circuitry is already present. |
Compared with STP75NF75 and IRFB4115PBF, BUK9506-75B,127 uniquely combines AEC-Q101 qualification, true logic-level gate drive (≤2.0 V VGS(th)), and 0.5 K/W thermal resistance - making it the only option among the three that satisfies automotive-grade reliability, MCU-direct control, and high-power thermal management simultaneously.
Availability
BUK9506-75B,127 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drives, and industrial solenoid actuation requiring stable component supply across multi-year production lifecycles.
Supply support for BUK9506-75B,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
BUK9506-75B,127 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-reliability automotive power switching where AEC-Q101 compliance, thermal resilience, and direct microcontroller interfacing are mandatory.
FAQ
Is BUK9506-75B,127 suitable for high-frequency PWM applications?
Yes - with 68 ns turn-on delay, 144 ns rise time, and 95 nC total gate charge, it supports PWM frequencies up to 100 kHz in motor control and DC-DC applications. Its low QGD/QG ratio (37/95 ≈ 0.39) ensures clean switching transitions and reduced Miller-induced shoot-through risk when paired with standard gate drivers.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the continuous drain current is derated to 75 A at Tmb = 100 °C - matching the package-limited ceiling. This reflects thermal saturation of the TO-220AB package, not silicon limitation, and remains constant from 100 °C to 175 °C mounting base temperature.
Does the mounting base require electrical isolation from the heatsink?
No - the mounting base is internally connected to the drain terminal (Pin 2). When mounted to a conductive heatsink, the heatsink becomes part of the drain circuit. Electrical isolation is only required if the heatsink is grounded or at a different potential; otherwise, direct metal-to-metal contact maximizes thermal performance.
Can BUK9506-75B,127 replace older BUK9506-75B versions without design changes?
Yes - the ",127" suffix denotes tape-and-reel packaging per ordering code BUK9506-75B,127 (SOT78A, 1000 pcs/reel). Electrical, thermal, and mechanical specifications are identical to the base BUK9506-75B part; only packaging format differs, requiring no PCB or schematic modifications.
BUK9506-75B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11693 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9506-75B,127 FAQ
1.How can I place an order for BUK9506-75B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9506-75B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9506-75B,127?
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6.How does Aetrix verify that BUK9506-75B,127 is sourced from the original manufacturer or authorized distributors?
All BUK9506-75B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9506-75B,127 meets industry standards.
7.What is the process for return or replacement of BUK9506-75B,127?
All BUK9506-75B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9506-75B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9506-75B,127 part is unused and in its original packaging.
Return procedure for BUK9506-75B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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