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Nexperia USA Inc. BUK9506-75B,127

Part No.:
BUK9506-75B,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK9506-75B,127.pdf
Description:
MOSFET N-CH 75V 75A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,704

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Product details

Overview

BUK9506-75B,127 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB package, rated for 75 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 300 W total power dissipation. It features 4.7 mΩ RDS(on) at VGS = 10 V and 25 °C, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for automotive load switching applications including motors, lamps, and solenoids in 12 V/24 V systems.

For engineers reviewing the BUK9506-75B,127 datasheet, BUK9506-75B,127 pinout, BUK9506-75B,127 application, or BUK9506-75B,127 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.1–2.0 V), low on-resistance under thermal stress, avalanche ruggedness (852 mJ), and mounting-base thermal resistance of 0.5 K/W - all critical for high-reliability automotive power switching designs.

Technical Context

This device employs TrenchMOS technology to achieve low RDS(on) while maintaining robust avalanche capability and stable threshold voltage across -55 °C to +175 °C. Its gate-source threshold voltage ranges from 0.5 V at 175 °C to 2.3 V at -55 °C, enabling reliable turn-on with standard 5 V microcontroller outputs even under extreme thermal conditions.

The internal drain and source inductances are tightly controlled (LD = 3.5–4.5 nH, LS = 7.5 nH), minimizing switching oscillation in high-di/dt automotive loads. Dynamic parameters include QG(tot) = 95 nC and QGD = 37 nC at VGS = 5 V, supporting efficient PWM control in motor drivers and DC-DC secondary-side switches.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 75 V maximum - supports 42 V automotive systems with 75 % derating margin against transients.
ID (continuous) 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capacity, not silicon.
RDS(on) 4.7 mΩ typ at VGS = 10 V, 25 °C - enables <1.2 W conduction loss at 50 A, reducing heatsink size.
RDS(on) @ 175 °C 12.8 mΩ max at VGS = 5 V - ensures functional gate drive margin under worst-case thermal stress.
EAS 852 mJ non-repetitive avalanche energy - withstands inductive kickback from solenoid or motor turn-off without failure.
Rth(j-mb) 0.5 K/W - allows direct mounting to chassis heatsink for high-power dissipation with minimal thermal interface resistance.
VGS(th) 1.1–2.0 V at 25 °C - guarantees full enhancement with 3.3 V or 5 V logic-level drivers without level-shifting circuitry.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Requires mechanical fastening via single mounting hole; leads are tinned except terminal zone per JEDEC SC-46 standard.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level input controlling channel conduction; requires ≤100 nA leakage drive at 15 V.
2 (D) Drain Main high-side power path; electrically tied to mounting base for low-inductance heatsinking.
3 (S) Source Power return node; referenced to system ground in low-side switch configurations.
Mounting Base (mb) Drain extension Provides primary thermal path to heatsink and contributes to low RDS(on) stability under thermal cycling.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive safety-critical functions including engine control, body electronics, and ADAS power stages.
Logic-level gate drive Operates fully enhanced with 5 V MCU GPIO output, eliminating need for external gate drivers in cost-sensitive modules.
175 °C junction rating Enables operation in under-hood environments (e.g., near exhaust manifolds) without thermal shutdown or parameter drift.
Low RDS(on) at elevated Tj 12.8 mΩ max at 175 °C and VGS = 5 V - maintains <2.5 W loss at 50 A, preserving efficiency in thermally constrained enclosures.
Avalanche ruggedness 852 mJ unclamped EAS - absorbs inductive energy from 40 A solenoid de-energization without external snubbers.

Applications

Automotive Body Control Module (BCM) 12 V/24 V DC Motor Driver

Use Scenario: Switching headlamp, fog lamp, and interior lighting loads in modern BCMs with CAN/LIN communication.

IC Role / Device Role / Timing Role: High-side load switch controlling 12 V incandescent/LED loads up to 75 A peak.

Use Value: AEC-Q101 compliance ensures long-term reliability in vibration-prone vehicle environments; 5 V gate drive simplifies integration with 32-bit ARM-based BCM MCUs.

Use Scenario: Driving brushed DC fans, radiator cooling pumps, and HVAC blower motors in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side PWM switch operating at 20 kHz with fast turn-on (68 ns td(on)) and low switching losses.

Use Value: 0.5 K/W Rth(j-mb) enables direct bolt-down to aluminum chassis, eliminating discrete heatsinks and reducing BOM count by 2 components.

42 V Mild Hybrid Starter-Generator Interface Industrial Solenoid Actuator Driver

Use Scenario: Controlling pre-charge and main contactor circuits in 42 V mild hybrid battery management systems.

IC Role / Device Role / Timing Role: High-voltage, high-current power switch handling transient surges during battery connection/disconnection.

Use Value: 75 V VDS rating provides 15 V margin above nominal 42 V bus, accommodating ISO 7637-2 pulse 5a (120 V) without clamping diodes.

Use Scenario: Driving industrial pneumatic/hydraulic solenoid valves in factory automation controllers.

IC Role / Device Role / Timing Role: Robust power switch managing 75 A inductive loads with fast recovery diode (68 ns trr) and 176 nC Qr.

Use Value: Integrated source-drain diode eliminates need for external flyback diode; 852 mJ EAS prevents failure during rapid valve de-energization cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP75NF75 75 V/75 A, RDS(on) = 10.5 mΩ @ 10 V, no AEC-Q101 qualification, TO-220FP package (isolated tab). Not suitable for automotive production; acceptable for industrial prototypes where qualification is not mandated. Select only if AEC-Q101 is not required and higher RDS(on) is tolerable in thermal budget.
IRFB4115PBF 150 V/110 A, RDS(on) = 5.5 mΩ @ 10 V, AEC-Q101 qualified, TO-220AB package, but VGS(th) = 2.0–4.0 V (not logic-level). Requires 10 V gate drive; unsuitable for direct 5 V MCU interface without level-shifting. Choose when higher voltage rating (150 V) is needed and gate driver circuitry is already present.

Compared with STP75NF75 and IRFB4115PBF, BUK9506-75B,127 uniquely combines AEC-Q101 qualification, true logic-level gate drive (≤2.0 V VGS(th)), and 0.5 K/W thermal resistance - making it the only option among the three that satisfies automotive-grade reliability, MCU-direct control, and high-power thermal management simultaneously.

Availability

BUK9506-75B,127 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drives, and industrial solenoid actuation requiring stable component supply across multi-year production lifecycles.

Supply support for BUK9506-75B,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

BUK9506-75B,127 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-reliability automotive power switching where AEC-Q101 compliance, thermal resilience, and direct microcontroller interfacing are mandatory.

FAQ

Is BUK9506-75B,127 suitable for high-frequency PWM applications?

Yes - with 68 ns turn-on delay, 144 ns rise time, and 95 nC total gate charge, it supports PWM frequencies up to 100 kHz in motor control and DC-DC applications. Its low QGD/QG ratio (37/95 ≈ 0.39) ensures clean switching transitions and reduced Miller-induced shoot-through risk when paired with standard gate drivers.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is derated to 75 A at Tmb = 100 °C - matching the package-limited ceiling. This reflects thermal saturation of the TO-220AB package, not silicon limitation, and remains constant from 100 °C to 175 °C mounting base temperature.

Does the mounting base require electrical isolation from the heatsink?

No - the mounting base is internally connected to the drain terminal (Pin 2). When mounted to a conductive heatsink, the heatsink becomes part of the drain circuit. Electrical isolation is only required if the heatsink is grounded or at a different potential; otherwise, direct metal-to-metal contact maximizes thermal performance.

Can BUK9506-75B,127 replace older BUK9506-75B versions without design changes?

Yes - the ",127" suffix denotes tape-and-reel packaging per ordering code BUK9506-75B,127 (SOT78A, 1000 pcs/reel). Electrical, thermal, and mechanical specifications are identical to the base BUK9506-75B part; only packaging format differs, requiring no PCB or schematic modifications.

BUK9506-75B,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
11693 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK9506-75B,127 FAQ

1.How can I place an order for BUK9506-75B,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9506-75B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9506-75B,127 reliable?

The price and inventory of BUK9506-75B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9506-75B,127 is usually 5 days.

3.What payment methods are accepted for BUK9506-75B,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9506-75B,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9506-75B,127?

BUK9506-75B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9506-75B,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9506-75B,127?

For technical support, including BUK9506-75B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9506-75B,127 requirements.

6.How does Aetrix verify that BUK9506-75B,127 is sourced from the original manufacturer or authorized distributors?

All BUK9506-75B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9506-75B,127 meets industry standards.

7.What is the process for return or replacement of BUK9506-75B,127?

All BUK9506-75B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9506-75B,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9506-75B,127 part is unused and in its original packaging.

Return procedure for BUK9506-75B,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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