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NXP Semiconductors BUK9508-55A,127

Part No.:
BUK9508-55A,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK9508-55A,127.pdf
Description:
MOSFET N-CH 55V 75A TO220AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:9,994

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Product details

Overview

BUK9508-55A from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ logic-level power MOSFET in SOT78 (TO-220AB) package, designed for high-current 12 V/24 V automotive and industrial switching. It delivers 125 A DC drain current at VGS = 5 V, 55 V VDS, 6.8 mΩ RDS(on) at 25 °C, 175 °C junction rating, and Qg(tot) = 92 nC - enabling robust, low-loss control of motors, lamps, and solenoids.

For engineers reviewing the BUK9508-55A datasheet, BUK9508-55A pinout, BUK9508-55A application, or BUK9508-55A equivalent, this page provides verified thermal resistance (Rth(j-mb) = 0.59 K/W), avalanche energy (670 mJ), gate threshold (1.5 V typ), diode forward voltage (0.85 V), and SOA curves - all critical for automotive load-switch reliability and thermal design validation.

Technical Context

This discrete MOSFET uses trench-gate silicon technology to achieve ultra-low on-resistance while maintaining logic-level gate drive compatibility (VGS(th) = 1–2 V, operational down to 4.5 V). Its mounting base is internally connected to the drain, enabling direct heatsink coupling and efficient thermal management in high-power linear or switching modes.

The device features integrated source-drain diode with 70 ns reverse recovery time and 170 nC recovered charge, supporting inductive load commutation. Avalanche ruggedness is specified at 670 mJ under unclamped inductive conditions (ID = 75 A, VDS ≤ 55 V), confirming suitability for automotive transient-tolerant designs without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum continuous drain-source blocking voltage; defines safe operation in 12 V/24 V automotive systems with load-dump transients.
ID (DC) 125 A at Tmb = 25 °C, VGS = 5 V - High-current capability enables single-device replacement of paralleled lower-RDS(on) FETs in starter relays or HVAC actuators.
RDS(on) 6.8 mΩ typ at VGS = 5 V, ID = 25 A, Tj = 25 °C - Low conduction loss reduces thermal stress and improves efficiency in battery-powered loads.
Qg(tot) 92 nC - Total gate charge determines driver strength requirement; compatible with standard 5 V microcontroller GPIO or dedicated gate drivers like UCC27531.
Rth(j-mb) 0.59 K/W max - Junction-to-mounting-base thermal resistance enables >200 W dissipation with modest heatsinking (e.g., 10 K/W heatsink yields ~120 W usable power).
EAS 670 mJ - Non-repetitive avalanche energy rating supports reliable operation during inductive turn-off spikes in motor control without clamping circuits.
VGS(th) 1.5 V typ - Logic-level threshold ensures full enhancement with 3.3 V or 5 V controllers, eliminating need for level-shifting or gate boosters.

Pinout & Package

SOT78 (TO-220AB) plastic package with isolated mounting base electrically connected to drain terminal; requires insulating washer when mounted to grounded heatsink. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; mounting base (MB) is internal drain connection.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control input; accepts logic-level voltage (≥4.5 V) to fully enhance channel; 100 nA leakage ensures low static power draw.
2 Drain (D) Main power output node; electrically tied to mounting base; must be isolated from PCB ground unless system common-drain architecture is used.
3 Source (S) Power return path; referenced to controller ground; low-inductance layout (<7.5 nH internal Ls) minimizes switching oscillation.

Key Features

Feature Design Value
TrenchMOS™ technology Enables 6.8 mΩ RDS(on) in TO-220 footprint - 40% lower than planar equivalents, reducing board area and thermal mass requirements.
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD - suitable for under-hood applications per ISO 16750.
175 °C junction rating Supports operation in engine bay environments up to 150 °C ambient with derated power; extends lifetime versus 150 °C-rated alternatives.
Logic-level gate drive Operates fully enhanced at VGS ≥ 4.5 V - eliminates external gate driver in MCU-based modules (e.g., body control units) using 5 V or 3.3 V I/O.
Integrated source-drain diode 0.85 V forward drop and 70 ns trr enable efficient freewheeling in brushed DC motor drives without external Schottky.

Applications

Automotive Starter Relay Control Industrial HVAC Actuator Drive

Use Scenario: Replaces electromechanical relay in 12 V starter circuit to eliminate contact wear, bounce, and arcing.

IC Role / Device Role / Timing Role: High-side power switch controlling solenoid coil; handles 125 A inrush with <40 ns turn-on delay.

Use Value: Enables silent, maintenance-free starting with 670 mJ avalanche tolerance absorbing coil energy during abrupt disconnection.

Use Scenario: Drives 24 V DC gearmotor in HVAC damper positioning system requiring bidirectional PWM control.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration; leverages 7.5 nH source inductance for clean current transitions.

Use Value: 6.8 mΩ RDS(on) limits I²R loss to <2 W at 25 A, allowing sealed enclosure operation without forced air cooling.

Commercial Vehicle Lighting System Truck Battery Disconnect Switch

Use Scenario: Controls high-intensity LED headlamp arrays (up to 100 W) with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: Low-side current sink; uses fast 167 ns fall time to support 2 kHz+ dimming frequencies without audible noise.

Use Value: 92 nC Qg allows direct drive from STM32 GPIO with <1 µs rise/fall, minimizing switching losses during duty-cycle modulation.

Use Scenario: Implements smart battery isolation in dual-battery truck systems, disconnecting auxiliary battery during cranking.

IC Role / Device Role / Timing Role: High-current, high-voltage switch rated for 55 V continuous blocking and 503 A pulsed surge.

Use Value: 0.59 K/W Rth(j-mb) enables >150 W continuous switching with compact heatsink, meeting SAE J1113-11 surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP120N55F6 Higher RDS(on) (7.5 mΩ min), higher Qg (105 nC), same 55 V/120 A rating, D2PAK package only. Requires larger PCB footprint and stronger gate driver; not available in TO-220 for retrofit designs. Select if D2PAK mounting is preferred and 15% higher conduction loss is acceptable.
IRF1405ZLPBF Lower VDS (55 V vs. 55 V same), higher RDS(on) (7.5 mΩ typ), 175 °C rating, TO-220 package, but Qg = 131 nC. Slower switching due to higher gate charge; less suitable for high-frequency PWM above 10 kHz. Choose only if legacy IR part compatibility is required and thermal margin exceeds 20 K/W.

Compared with STP120N55F6 and IRF1405ZLPBF, the BUK9508-55A offers superior combination of low RDS(on), low Qg, and TO-220 packaging - delivering higher efficiency, faster switching, and direct drop-in replacement in space-constrained automotive modules.

Availability

BUK9508-55A is available at Aetrix Electronics and suitable for automotive starter systems, industrial HVAC actuation, and commercial vehicle lighting requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUK9508-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on automotive, industrial, and IoT applications, with heritage in Philips Semiconductors' high-reliability power devices.

The BUK95xx series was developed specifically for automotive power distribution and load switching, emphasizing AEC-Q101 compliance, avalanche ruggedness, and logic-level drivability in harsh environments.

FAQ

What is the maximum continuous drain current for BUK9508-55A at 100 °C mounting base temperature?

The BUK9508-55A supports 75 A continuous drain current at Tmb = 100 °C and VGS = 5 V, as limited by package thermal constraints (not silicon). This value is confirmed in Table 3 "Limiting values" and Figure 2 of the official datasheet, where the curve caps at 75 A above 75 °C mounting temperature due to SOT78 package limitations.

Is BUK9508-55A pin-compatible with BUK9608-55A?

No, BUK9508-55A (SOT78/TO-220AB) and BUK9608-55A (SOT404/D2-PAK) have different pinouts and mechanical footprints. While both share identical electrical specifications, the SOT404 package omits pin 2 connectivity per datasheet note [1], and their mounting base geometries differ significantly - requiring separate PCB layouts and thermal interface designs.

Does BUK9508-55A include an integrated body diode, and what are its key parameters?

Yes, BUK9508-55A integrates a source-drain diode with VSD = 0.85 V typical at IS = 25 A and Tj = 25 °C, trr = 70 ns, and Qr = 170 nC. These values are measured under specified conditions (VGS = −10 V, VDS = 25 V, dIS/dt = −100 A/µs) and enable reliable freewheeling in inductive motor and solenoid loads without external diodes.

What is the gate-source voltage limit for BUK9508-55A, and why does it matter for MCU interfacing?

The BUK9508-55A has a ±15 V absolute maximum VGS, exceeding standard ±10 V ratings. This allows safe operation with 5 V microcontrollers even under transient overvoltage conditions (e.g., ESD events), and supports robust gate drive design without clamping diodes - critical for automotive ECUs where supply rail instability is common.

How does the 0.59 K/W Rth(j-mb) of BUK9508-55A impact heatsink selection?

With Rth(j-mb) = 0.59 K/W max, total thermal resistance from junction to ambient depends primarily on heatsink performance. For example, pairing BUK9508-55A with a 5 K/W heatsink yields ~5.6 K/W total, enabling ~45 W continuous dissipation at ΔT = 250 K (175 °C − 25 °C). This simplifies thermal design versus higher-Rth alternatives requiring active cooling.

BUK9508-55A,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
92 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
6021 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
253W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK9508-55A,127 FAQ

1.How can I place an order for BUK9508-55A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9508-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9508-55A,127 reliable?

The price and inventory of BUK9508-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9508-55A,127 is usually 5 days.

3.What payment methods are accepted for BUK9508-55A,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9508-55A,127 transactions.

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4.How is shipping managed for BUK9508-55A,127?

BUK9508-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9508-55A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9508-55A,127?

For technical support, including BUK9508-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9508-55A,127 requirements.

6.How does Aetrix verify that BUK9508-55A,127 is sourced from the original manufacturer or authorized distributors?

All BUK9508-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9508-55A,127 meets industry standards.

7.What is the process for return or replacement of BUK9508-55A,127?

All BUK9508-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9508-55A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9508-55A,127 part is unused and in its original packaging.

Return procedure for BUK9508-55A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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