Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9508-55B,127

Part No.:
BUK9508-55B,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK9508-55B,127.pdf
Description:
MOSFET N-CH 55V 75A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,697

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9508-55B from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 6.2 mΩ RDS(on) at VGS = 10 V and ID = 25 A, and is AEC-Q101 qualified for automotive power switching in 12 V/24 V systems.

For engineers reviewing the BUK9508-55B datasheet, BUK9508-55B pinout, BUK9508-55B application, or BUK9508-55B equivalent, this page provides verified technical context, thermal design values, gate-drive compatibility with 5 V logic sources, and validated alternatives for automotive load control.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness (352 mJ unclamped), enabling robust operation under inductive load switching. Its gate threshold voltage (1.1–2.0 V at Tj = 25 °C) ensures reliable turn-on with standard 5 V microcontroller outputs.

The mounting base is electrically connected to the drain, requiring isolation when heatsink-mounted. Thermal resistance from junction to mounting base is 0.74 K/W, supporting high-power dissipation up to 203 W at Tmb = 25 °C - critical for thermally constrained automotive engine bay environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V maximum drain-source voltage - supports 24 V automotive systems with margin against load dump transients.
RDS(on) 7.1 mΩ typical at VGS = 5 V, ID = 25 A, Tj = 25 °C - enables efficient 12 V/24 V load switching with <1.8 W conduction loss at 50 A.
ID (cont.) 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capacity, not silicon capability.
Tj max 175 °C - allows operation in under-hood environments without derating below ambient extremes.
QGD 16 nC typical - determines Miller plateau duration during switching; supports <150 ns turn-off delay with 10 Ω gate resistor.
EAS 352 mJ non-repetitive avalanche energy - sustains unclamped inductive kickback from solenoids or motors without failure.
Rth(j-mb) 0.74 K/W - defines minimum heatsink requirement: ~0.5 K/W heatsink needed for 100 W steady-state dissipation at ΔT = 74 K.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base electrically tied to drain terminal. Requires insulated mounting hardware when drain is not at chassis ground.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input; accepts 5 V logic-level drive; threshold 1.1–2.0 V ensures TTL/CMOS compatibility.
2 (D) Drain Main power output; internally bonded to mounting base - must be electrically isolated from heatsink unless drain referenced to chassis.
3 (S) Source Power return path; common reference for gate drive and load current sensing; low-inductance bond wire (7.5 nH).
Mounting Base (mb) Drain extension Electrically connected to Pin 2 (D); primary thermal path to heatsink; requires insulating washer if isolation needed.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
Logic-level gate drive Turns fully on with 5 V gate-source voltage - eliminates need for gate driver ICs in MCU-based designs.
175 °C junction rating Enables uninterrupted operation in high-ambient environments (e.g., near exhaust manifolds or battery compartments).
Low RDS(on) @ 5 V 7.1 mΩ typical at VGS = 5 V - reduces conduction loss by >30% vs. standard MOSFETs requiring 10 V drive.
High avalanche energy 352 mJ unclamped EAS - withstands worst-case inductive flyback without external snubbers in motor/solenoid drivers.

Applications

Automotive Engine Control Commercial Vehicle Lighting

Use Scenario: Switching fuel injector solenoids and ignition coils in 12 V gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling repetitive 5–20 A pulsed loads with <100 µs switching windows.

Use Value: 175 °C rating prevents thermal shutdown during sustained high-load duty cycles; 352 mJ avalanche ruggedness absorbs coil flyback without clamping diodes.

Use Scenario: Controlling LED headlamps, fog lamps, and brake lights in 24 V heavy-duty trucks.

IC Role / Device Role / Timing Role: Low-side load switch managing 10–40 A steady-state currents with PWM dimming support.

Use Value: 7.1 mΩ RDS(on) at 5 V drive minimizes heat generation in sealed lamp housings; TO-220AB mountability simplifies mechanical integration.

Industrial Motor Starters Off-Road Equipment Power Distribution

Use Scenario: Driving 12 V DC brush motors in agricultural machinery and HVAC actuators.

IC Role / Device Role / Timing Role: Bidirectional or unidirectional power switch with reverse recovery handling for inductive back-EMF.

Use Value: Source-drain diode VSD = 0.85 V at 25 A enables efficient freewheeling; 69 ns trr limits switching losses during commutation.

Use Scenario: Solid-state replacement of mechanical relays in construction equipment battery management modules.

IC Role / Device Role / Timing Role: High-reliability load disconnect switch for 12/24 V auxiliary circuits (winches, hydraulics, PTO).

Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal cycling, and load dump stress per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF5 60 V VDS, 220 A peak, 1.8 mΩ RDS(on) @ 10 V but 3.2 mΩ @ 5 V; DFN8 5×6 mm package. Higher current density but surface-mount only; lacks mounting base for bolted heatsinking. Select when PCB space is constrained and thermal interface uses thermal pads; avoid where mechanical mounting or high pulse current is required.
IRF1405ZLPbF 55 V VDS, 164 A peak, 5.3 mΩ RDS(on) @ 10 V but 7.8 mΩ @ 5 V; TO-220AB package, no AEC-Q101 qualification. Same footprint but not automotive-qualified; lower avalanche energy (220 mJ vs. 352 mJ). Select for cost-sensitive industrial use where AEC-Q101 is not mandated; verify system-level transient immunity separately.

Compared with STL220N5LF5 and IRF1405ZLPbF, the BUK9508-55B uniquely combines AEC-Q101 compliance, 5 V logic-level drive with sub-8 mΩ on-resistance, and integrated drain-to-heatsink thermal path - making it the only choice for production automotive power switches requiring both reliability and simplified thermal design.

Availability

BUK9508-55B is available at Aetrix Electronics and suitable for automotive engine control units, commercial vehicle lighting systems, and industrial motor starters requiring stable component supply across multi-year production cycles.

Supply support for BUK9508-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a Dutch semiconductor company specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.

The BUK9508-55B belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for AEC-Q101-compliant automotive power distribution and load switching where 5 V MCU drive, high-temperature operation, and avalanche robustness are mandatory.

FAQ

Is BUK9508-55B suitable for high-frequency PWM motor control?

Yes - with 131 ns td(off) and 86 ns tf at VGS = 5 V, it supports PWM frequencies up to 20 kHz in brushed DC motor drives. However, its 3960 pF Ciss increases gate drive power above 50 kHz; for >50 kHz operation, consider gate driver buffering or lower-capacitance alternatives.

Can BUK9508-55B be used in high-side configuration?

No - the mounting base is internally connected to the drain (Pin 2), making isolated high-side switching impractical without complex floating gate drive circuitry. It is optimized for low-side switching or source-grounded configurations where the drain connects directly to the load supply rail.

What is the maximum safe operating area (SOA) at 100 °C mounting base temperature?

At Tmb = 100 °C, continuous drain current is derated to 75 A (per Figure 1), and the SOA curve (Figure 3) shows 1 ms pulse capability up to 439 A at VDS = 10 V. For 100 ms pulses, limit VDS to ≤25 V and ID to ≤120 A to stay within thermal limits.

Does BUK9508-55B require a gate resistor for protection?

Yes - a 10 Ω series gate resistor is recommended (per Figure 13 test conditions) to damp ringing, limit peak gate current, and control dV/dt during switching. Lower values (<5 Ω) risk oscillation; higher values (>47 Ω) increase switching losses and thermal stress during transitions.

BUK9508-55B,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
5280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
203W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK9508-55B,127 FAQ

1.How can I place an order for BUK9508-55B,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9508-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9508-55B,127 reliable?

The price and inventory of BUK9508-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9508-55B,127 is usually 5 days.

3.What payment methods are accepted for BUK9508-55B,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9508-55B,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9508-55B,127?

BUK9508-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9508-55B,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9508-55B,127?

For technical support, including BUK9508-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9508-55B,127 requirements.

6.How does Aetrix verify that BUK9508-55B,127 is sourced from the original manufacturer or authorized distributors?

All BUK9508-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9508-55B,127 meets industry standards.

7.What is the process for return or replacement of BUK9508-55B,127?

All BUK9508-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9508-55B,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9508-55B,127 part is unused and in its original packaging.

Return procedure for BUK9508-55B,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9508-55B,127 Tags

  • BUK9508-55B,127
  • BUK9508-55B,127 PDF
  • BUK9508-55B,127 Datasheet
  • BUK9508-55B,127 Specifications
  • BUK9508-55B,127 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9508-55B,127
  • Buy BUK9508-55B,127
  • BUK9508-55B,127 Price
  • BUK9508-55B,127 Distributor
  • BUK9508-55B,127 Supplier
  • BUK9508-55B,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER