NXP Semiconductors BUK9509-55A,127
- Part No.:
- BUK9509-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9509-55A,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,911
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Product details
Overview
BUK9509-55A from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ logic-level power MOSFET in SOT78 (TO-220AB) package, rated for 55 V drain-source voltage, 108 A DC drain current at Tmb = 25 °C and VGS = 5 V, with typical RDS(on) of 7.6 mΩ at VGS = 5 V and 25 A. It serves as a high-current, low-RDS(on) switching device in automotive 12 V/24 V load control circuits.
For engineers reviewing the BUK9509-55A datasheet, BUK9509-55A pinout, BUK9509-55A application, or BUK9509-55A equivalent, this page delivers verified electrical specs, thermal behavior, gate drive compatibility, mounting-base thermal resistance, and real-world automotive switching use cases - all confirmed from the official 2002 product data sheet.
Technical Context
This MOSFET uses TrenchMOS™ technology to achieve low on-resistance while maintaining robust avalanche ruggedness (400 mJ unclamped inductive energy). Its logic-level gate threshold (VGS(th) = 1–2 V typ.) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
Thermal design centers on junction-to-mounting-base resistance (Rth(j-mb) ≤ 0.71 K/W), requiring heatsink attachment to the metal mounting base (pin 2, internally connected to drain). The device is Q101-qualified and rated for continuous operation up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - supports 12 V and 24 V automotive battery systems with margin against load-dump transients. |
| ID (DC) | 108 A at Tmb = 25 °C, VGS = 5 V - enables high-power solenoid or motor driver stages without paralleling devices. |
| RDS(on) | 7.6 mΩ typ. at VGS = 5 V, ID = 25 A, Tj = 25 °C - minimizes conduction loss and self-heating in continuous switching applications. |
| Tj max | 175 °C - allows operation in under-hood environments with minimal derating when properly heatsinked. |
| Qg(tot) | 60 nC typ. - determines gate drive power requirement and switching speed in PWM-controlled loads. |
| EAS | 400 mJ non-repetitive avalanche energy - provides inherent robustness against inductive kickback in relay/motor switching. |
| Rth(j-mb) | ≤ 0.71 K/W - defines thermal path efficiency when mounted to a heatsink; critical for calculating steady-state junction temperature. |
Pinout & Package
SOT78 (TO-220AB) plastic single-ended package with metal mounting base acting as both mechanical heatsink interface and electrical connection to drain. Mounting base is electrically tied to pin 2 (drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; logic-level compatible (VGS(th) = 1.5 V typ.), accepts 4.5 V–15 V drive. |
| 2 | Drain (D) | High-side power output node; internally connected to mounting base - must be isolated from PCB ground unless circuit topology requires it. |
| 3 | Source (S) | Power return path; referenced to gate drive common; used for current sensing and feedback in high-side configurations. |
| Mounting Base | Drain (D) | Electrically identical to pin 2; primary thermal interface - requires insulating washer if mounted to grounded heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 7.6 mΩ RDS(on) at 55 V rating - improves power density and reduces conduction losses vs. planar MOSFETs. |
| Q101 qualification | Meets AEC-Q101 stress test requirements for automotive discrete semiconductors - validated for reliability in harsh vehicle environments. |
| Logic-level gate drive | VGS(th) = 1–2 V and full enhancement at VGS = 4.5 V - eliminates need for external gate drivers in MCU-based control modules. |
| 175 °C junction rating | Supports sustained operation in engine compartment locations where ambient exceeds 105 °C - reduces thermal derating overhead. |
| Avalanche energy rating | 400 mJ unclamped inductive energy - tolerates worst-case turn-off events in motor or solenoid loads without failure. |
Applications
| Automotive Body Control Module | Industrial 24 V DC Motor Driver |
|---|---|
|
Use Scenario: Switching headlamps, fog lamps, and HVAC blower motors in modern BCMs. IC Role / Device Role / Timing Role: High-side power switch controlling 12 V/24 V resistive and inductive loads. Use Value: Low RDS(on) minimizes heat generation during long-duration lamp operation; logic-level gate simplifies integration with 5 V microcontrollers. |
Use Scenario: Driving brushed DC motors in factory automation actuators and conveyor systems. IC Role / Device Role / Timing Role: Main power switch in H-bridge half-bridge stage or single-direction motor controller. Use Value: 108 A DC rating handles motor stall currents; avalanche ruggedness prevents failure during sudden motor stop or direction reversal. |
| Truck Trailer Lighting Controller | Off-Highway Equipment Solenoid Driver |
|
Use Scenario: Managing trailer brake lights, turn signals, and ABS power distribution in commercial vehicle towing systems. IC Role / Device Role / Timing Role: Load-switching FET interfacing between CAN/LIN-controlled MCU and high-current lighting circuits. Use Value: Q101 qualification ensures compliance with heavy-duty vehicle environmental standards; 55 V rating accommodates 24 V nominal + 100 V load-dump transients. |
Use Scenario: Energizing hydraulic or pneumatic solenoids in construction and agricultural machinery. IC Role / Device Role / Timing Role: High-reliability power switch delivering pulsed or latched current to 12 V/24 V solenoid coils. Use Value: 175 °C junction rating sustains operation near hot engine blocks; mounting-base thermal path enables compact heatsinking in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N55F7 | 55 V, 110 A, RDS(on) = 6.5 mΩ @ 10 V; TO-220FP package (isolated tab); gate threshold ~2.5 V. | Higher gate threshold requires 5 V drive assurance; lower RDS(on) but no Q101 qualification. | Prefer when lower conduction loss is prioritized over automotive qualification and logic-level margin. |
| IRF1404ZLPbF | 40 V, 204 A, RDS(on) = 3.8 mΩ @ 10 V; TO-220AB; VGS(th) = 2–4 V; not Q101-qualified. | Lower voltage rating limits use to 12 V systems only; higher current capability but reduced transient margin. | Choose for cost-sensitive 12 V industrial motor drives where 55 V surge immunity is not required. |
Compared with STP110N55F7 and IRF1404ZLPbF, the BUK9509-55A uniquely combines Q101 qualification, true logic-level gate (1.5 V typ. threshold), and 55 V rating in a standard TO-220AB - making it the only option validated for automotive body electronics with minimal gate drive overhead.
Availability
BUK9509-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V motor drives, and off-highway solenoid control systems requiring stable component supply across extended production lifecycles.
Supply support for BUK9509-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications. Formerly part of Philips, its power MOSFET portfolio emphasizes reliability and system-level robustness.
The BUK95xx series was designed specifically for automotive power switching - delivering logic-level drivability, AEC-Q101 qualification, and high-current capability in thermally optimized TO-220AB packages for under-hood and chassis-mounted control units.
FAQ
What is the maximum continuous drain current for BUK9509-55A at 100 °C mounting base temperature?
The BUK9509-55A supports 75 A continuous drain current at Tmb = 100 °C and VGS = 5 V, as specified in Table 3 (Limiting Values). This derating reflects package thermal limits rather than silicon capability - the die itself remains functional up to 175 °C junction temperature, but power dissipation is constrained by the TO-220AB package's ability to transfer heat at elevated base temperatures.
Is BUK9509-55A pin-compatible with BUK9609-55A?
No, BUK9509-55A and BUK9609-55A are not pin-compatible. BUK9509-55A uses SOT78 (TO-220AB) with three leads and a mounting base tied to drain, while BUK9609-55A uses SOT404 (D2-PAK) - a surface-mount package with different footprint, lead configuration, and thermal interface geometry. Their pin numbering differs, and mechanical mounting requirements are incompatible.
Does BUK9509-55A have integrated gate protection diodes?
No, the BUK9509-55A does not include integrated gate protection diodes. The datasheet specifies gate-source leakage current (IGSS) of up to 100 nA at ±10 V, and absolute maximum VGS is ±15 V - indicating external gate protection (e.g., Zener clamp or RC snubber) is required in noisy automotive environments to prevent ESD or transient-induced gate oxide damage.
Can BUK9509-55A be used in high-frequency PWM applications above 100 kHz?
BUK9509-55A is not optimized for high-frequency PWM above 100 kHz. Its total gate charge (Qg(tot)) is 60 nC and rise/fall times are 149 ns/131 ns - resulting in significant switching losses at high frequencies. It is best suited for <50 kHz switching (e.g., lamp dimming, solenoid timing) or DC-on/off control where low RDS(on) and avalanche ruggedness outweigh switching speed.
What is the thermal resistance from junction to ambient for BUK9509-55A in free-air conditions?
The BUK9509-55A has a junction-to-ambient thermal resistance (Rth(j-a)) of 60 K/W in vertical mounting position with still air, per Table 4. This value assumes no heatsink - practical use requires mounting the device's metal base to a heatsink to achieve the much lower Rth(j-mb) ≤ 0.71 K/W, which dominates thermal performance in real applications.
BUK9509-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4633 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 211W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9509-55A,127 FAQ
1.How can I place an order for BUK9509-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9509-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9509-55A,127 reliable?
The price and inventory of BUK9509-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9509-55A,127 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK9509-55A,127?
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6.How does Aetrix verify that BUK9509-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK9509-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9509-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK9509-55A,127?
All BUK9509-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9509-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9509-55A,127 part is unused and in its original packaging.
Return procedure for BUK9509-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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