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NXP Semiconductors BUK9509-75A,127

Part No.:
BUK9509-75A,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK9509-75A,127.pdf
Description:
MOSFET N-CH 75V 75A TO220AB
Quantity:
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Payment
Shipping:
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Inventory:3,678

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Product details

Overview

BUK9509-75A from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 75 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature - designed for automotive power switching in 12 V/24 V systems including motor, lamp, and solenoid control.

For engineers reviewing the BUK9509-75A datasheet, BUK9509-75A pinout, BUK9509-75A application, or BUK9509-75A equivalent, key selection criteria include RDS(on) ≤ 9 mΩ @ VGS = 5 V, Q101 compliance, avalanche energy rating of 562 mJ, thermal resistance Rth(j-mb) = 0.65 K/W, and suitability for thermally demanding mounting-base environments.

Technical Context

This device uses TrenchMOS technology to achieve low conduction losses and stable threshold voltage across temperature. Its gate-source threshold voltage ranges from 0.5 V (Tj = 175 °C) to 2.3 V (Tj = −55 °C), enabling reliable logic-level drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The integrated source-drain diode supports freewheeling in inductive loads, with VSD = 0.85–1.2 V @ IS = 25 A and trr = 70.3 ns. Avalanche ruggedness is specified at 562 mJ under unclamped conditions (ID = 75 A, Vsup ≤ 75 V), confirming robustness against inductive switching transients.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 75 V maximum - supports 42 V automotive systems with margin for load-dump transients.
RDS(on) 7.6–9.0 mΩ @ VGS = 5 V, ID = 25 A, Tj = 25 °C - enables high-efficiency switching with <1.5 W conduction loss at 50 A.
ID (continuous) 75 A @ Tmb = 25 °C - limited by D2PAK package thermal capability; derates to ~45 A at Tmb = 100 °C.
EAS 562 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events without failure.
Tj max 175 °C - qualified for under-hood automotive applications with extended thermal headroom.
Rth(j-mb) 0.65 K/W - enables high-power dissipation when mounted on heatsink via metal mounting base.
VGS(th) 1.0–2.0 V @ Tj = 25 °C - ensures full enhancement with standard logic-level gate drivers.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with isolated mounting base electrically connected to drain. Dimensions per Figure 16: 15.8 × 10.3 × 4.5 mm (L × W × H), with 3 leads (one cropped).

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts logic-level input (VGS = 0–10 V); low input capacitance (Ciss = 6631 pF typ) reduces driver burden.
2 (D) Drain Main power output; electrically tied to mounting base - requires insulated heatsink or direct thermal interface to chassis ground.
3 (S) Source Power return path; referenced to system ground; internal source inductance 7.5 nH affects high-speed switching behavior.

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = 4.5–5 V - eliminates need for external gate drivers in MCU-based automotive modules.
AEC-Q101 qualified Validated for automotive critical applications including engine control, body electronics, and ADAS power stages.
Low RDS(on) at 5 V 7.6 mΩ typical @ VGS = 5 V - reduces conduction loss by >30% vs. standard MOSFETs requiring 10 V gate drive.
175 °C junction rating Enables operation in high-ambient under-hood locations without derating penalties seen in 150 °C-rated devices.
High avalanche energy 562 mJ unclamped EAS - provides intrinsic protection against inductive kickback in motor/solenoid switching without external snubbers.

Applications

Automotive Body Control Module 12 V DC Motor Driver

Use Scenario: Switching high-current loads such as window lifters, seat adjusters, and HVAC actuators in BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V battery-fed inductive loads.

Use Value: Low RDS(on) minimizes heat generation in space-constrained modules; Q101 qualification ensures long-term reliability in vibration-prone environments.

Use Scenario: Driving brushed DC motors in power seats, wipers, or cooling fans.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-FET PWM circuits.

Use Value: Fast switching (td(off) = 424 ns) and low gate charge support efficient 20 kHz PWM; avalanche ruggedness handles back-EMF during abrupt stop/start.

LED Headlamp Power Stage 42 V Mild Hybrid Starter Generator Control

Use Scenario: Constant-current regulation and on/off control of high-brightness LED arrays in adaptive front lighting systems.

IC Role / Device Role / Timing Role: Precision current-sense FET in feedback loop or main power switch in buck/boost LED drivers.

Use Value: Tight RDS(on) tolerance (±10%) enables accurate current mirroring; 75 V rating accommodates transient surges up to ISO 7637-2 Pulse 5a.

Use Scenario: Main power switch in 42 V starter-generator inverters and DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-temperature switching element in three-phase inverter legs.

Use Value: 175 °C rating and 0.65 K/W Rth(j-mb) allow sustained 75 A operation with minimal heatsink mass; D2PAK mechanical robustness withstands engine bay shock/vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDS, 220 A ID, TO-220FP package, RDS(on) = 1.4 mΩ @ 10 V - not logic-level; requires 10 V gate drive. Not suitable for 42 V systems or logic-level MCU interfaces; better for high-current 12 V industrial loads. Select only if higher current and lower RDS(on) are prioritized over automotive qualification and logic-level compatibility.
IRF1405PBF 55 V VDS, 169 A ID, TO-220 package, RDS(on) = 5.3 mΩ @ 10 V - not AEC-Q101 qualified; VGS(th) = 2–4 V. Lacks automotive qualification and 75 V rating; unsuitable for 42 V load-dump environments. Consider only for cost-sensitive non-automotive 12/24 V power switching where qualification and transient margin are not required.

Compared with STL220N4F7AG and IRF1405PBF, the BUK9509-75A uniquely combines 75 V rating, Q101 qualification, true logic-level operation (≤2 V VGS(th)), and 175 °C capability - making it the only drop-in solution for AEC-compliant 42 V automotive power stages requiring minimal gate drive overhead.

Availability

BUK9509-75A is available at Aetrix Electronics and suitable for automotive body control, 12 V/24 V motor drives, and 42 V mild hybrid power conversion requiring stable component supply and long-lifecycle support.

Supply support for BUK9509-75A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK9509-75A belongs to Nexperia's TrenchMOS logic-level automotive FET product line, engineered specifically for robust, thermally efficient power switching in harsh automotive environments - emphasizing AEC-Q101 compliance, avalanche ruggedness, and simplified gate drive.

FAQ

What is the maximum drain-source voltage rating for BUK9509-75A?

The BUK9509-75A has a maximum drain-source voltage (VDS) rating of 75 V, verified per IEC 60134 limiting values. This rating applies across the full operating junction temperature range (−55 °C to +175 °C) and supports use in 42 V automotive systems with margin for ISO 7637-2 load-dump transients. The BUK9509-75A maintains this rating without derating up to its maximum junction temperature.

Is BUK9509-75A qualified for automotive applications?

Yes, the BUK9509-75A is AEC-Q101 qualified and explicitly designed for automotive critical applications, as stated in its general description and features. It meets the stress test requirements for temperature cycling, humidity, and mechanical shock defined in AEC-Q101 Rev G. The BUK9509-75A is used in body control modules, motor drivers, and lighting systems where automotive-grade reliability is mandatory.

What is the typical RDS(on) of BUK9509-75A at 5 V gate drive?

The BUK9509-75A exhibits a typical RDS(on) of 7.6 mΩ at VGS = 5 V, ID = 25 A, and Tj = 25 °C, with a maximum of 9.0 mΩ under those same conditions. At elevated temperature (Tj = 175 °C), RDS(on) rises to 18.9 mΩ max. This performance confirms true logic-level operation - the BUK9509-75A delivers low on-resistance without requiring 10 V gate drive.

Does BUK9509-75A have an integrated body diode, and what are its characteristics?

Yes, the BUK9509-75A includes an integrated source-drain diode with forward voltage VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C. Its reverse recovery time (trr) is 70.3 ns, and recovered charge (Qr) is 213 nC under specified test conditions (IS = 20 A, dIS/dt = −100 A/µs). These parameters make the BUK9509-75A suitable for freewheeling in inductive switching applications like motor control.

What package type does BUK9509-75A use, and how is thermal management implemented?

The BUK9509-75A uses the D2PAK (SOT404) package, featuring a metal mounting base electrically connected to the drain terminal. Thermal resistance from junction to mounting base (Rth(j-mb)) is 0.65 K/W max, enabling efficient heat transfer to an external heatsink. The mounting base must be electrically isolated unless drain is at system ground potential - proper thermal interface material and mechanical clamping are essential for achieving rated power dissipation.

BUK9509-75A,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
8840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK9509-75A,127 FAQ

1.How can I place an order for BUK9509-75A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9509-75A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9509-75A,127 reliable?

The price and inventory of BUK9509-75A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9509-75A,127 is usually 5 days.

3.What payment methods are accepted for BUK9509-75A,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9509-75A,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9509-75A,127?

BUK9509-75A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9509-75A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9509-75A,127?

For technical support, including BUK9509-75A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9509-75A,127 requirements.

6.How does Aetrix verify that BUK9509-75A,127 is sourced from the original manufacturer or authorized distributors?

All BUK9509-75A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9509-75A,127 meets industry standards.

7.What is the process for return or replacement of BUK9509-75A,127?

All BUK9509-75A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9509-75A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9509-75A,127 part is unused and in its original packaging.

Return procedure for BUK9509-75A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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