NXP Semiconductors BUK9510-55A,127

Overview

BUK9510-55A from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 55 V drain-source voltage, 75 A continuous drain current at 25 °C, and 175 °C junction temperature - designed for automotive-grade power switching in 12 V/24 V systems including motor, lamp, and solenoid control.

For engineers reviewing the BUK9510-55A datasheet, BUK9510-55A pinout, BUK9510-55A application, or BUK9510-55A equivalent, key selection criteria include R_DS(on) ≤10 mΩ at V_GS = 5 V, AEC-Q101 qualification, avalanche energy rating of 333 mJ, thermal resistance R_th(j-mb) = 0.75 K/W, and gate threshold voltage range of 0.5–2.3 V across temperature.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) max 2.3 V at -55 °C, min 0.5 V at 175 °C). Its internal structure supports unclamped inductive switching with E_DS(AL)S = 333 mJ and features integrated source-drain diode with V_SD = 0.85–1.2 V at 25 A and t_rr = 77 ns.

Thermal design is enabled by direct mounting-base thermal path (R_th(j-mb) = 0.75 K/W), while dynamic performance includes Q_G(tot) = 68 nC, Q_GD = 28 nC, and C_iss = 3200–4307 pF - optimized for fast switching in thermally demanding automotive environments.

Key Specifications

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base connected internally to drain; 3-lead configuration with standardized mechanical dimensions per IEC/JEDEC SC-46.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N5LF5 and IRF1404ZLPBF, the BUK9510-55A uniquely combines AEC-Q101 qualification, 55 V rating, and true logic-level operation (≤2.3 V V_GS(th)) - making it the only drop-in solution for automotive 12 V/24 V switching where gate drive voltage and reliability are constrained.

Availability

BUK9510-55A is available at Aetrix Electronics and suitable for automotive motor control, 12 V/24 V load switching, and thermally demanding solenoid applications requiring stable component supply and long-term lifecycle support.

Supply support for BUK9510-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK9510-55A belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for robust, high-reliability power switching in automotive subsystems where thermal resilience, gate drive simplicity, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current rating for BUK9510-55A?

The BUK9510-55A has a maximum continuous drain current of 75 A at mounting base temperature (T_mb) = 25 °C, limited by package thermal capacity. At T_mb = 100 °C, this drops to 70 A, and at T_mb = 125 °C, it is reduced to approximately 60 A per Figure 1 in the datasheet. Derating must follow the normalized ID curve versus T_mb.

Is BUK9510-55A suitable for 3.3 V microcontroller gate drive?

Yes, the BUK9510-55A is explicitly designed as a logic-level FET with V_GS(th) ranging from 0.5 V to 2.3 V across temperature. At 25 °C, V_GS(th) is typically 1.5 V, and R_DS(on) is ≤10 mΩ at V_GS = 5 V and ≤11 mΩ at V_GS = 4.5 V - confirming full enhancement with 3.3 V logic when combined with appropriate gate resistor sizing.

Does BUK9510-55A have an integrated body diode, and what are its characteristics?

Yes, the BUK9510-55A includes an integrated source-drain diode with forward voltage V_SD = 0.85–1.2 V at I_S = 25 A and T_j = 25 °C. Its reverse recovery time t_rr is 77 ns and recovered charge Q_r is 230 nC under specified test conditions - enabling use in freewheeling and synchronous rectification roles without external diodes in many 12 V/24 V applications.

What is the thermal resistance from junction to mounting base for BUK9510-55A?

The thermal resistance from junction to mounting base (R_th(j-mb)) for BUK9510-55A is 0.75 K/W, measured under standard test conditions per Figure 4. This value assumes proper mechanical mounting to a heatsink with thermal interface material and reflects the dominant thermal path in high-power operation - critical for calculating junction temperature rise under 200 W total power dissipation.

Is BUK9510-55A qualified for automotive applications, and what standard does it meet?

Yes, the BUK9510-55A is qualified to AEC-Q101 for automotive applications, as explicitly stated in section 1.2 of the datasheet. It is designed and tested for use in automotive critical systems including engine management, chassis control, and body electronics - with guaranteed operation from -55 °C to +175 °C junction temperature and validated reliability under temperature cycling, humidity, and mechanical stress.