My Inquiry
My Account
NXP Semiconductors BUK95150-55A,127
- Part No.:
- BUK95150-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK95150-55A,127.pdf
- Description:
- MOSFET N-CH 55V 13A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,691
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK95150-55A,127 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode logic-level TrenchMOS™ power transistor in TO220AB and SOT404 packages, rated for 55 V VDS, 13 A DC drain current at 25 °C, and 150 mΩ RDS(ON) at VGS = 5 V. It serves as a high-efficiency, automotive-grade switching element in low-voltage DC-DC converters and motor control circuits.
For engineers reviewing the BUK95150-55A,127 datasheet, BUK95150-55A,127 pinout, BUK95150-55A,127 application, or BUK95150-55A,127 equivalent, key selection criteria include its 5 V logic-level gate drive compatibility, 175 °C junction temperature rating, unclamped avalanche energy capability (25 mJ), and dual-package availability (TO220AB/SOT404) for thermal and layout flexibility.
Technical Context
This device uses trench-gate MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge. Its gate threshold voltage (1.0–2.0 V at 25 °C) ensures reliable turn-on with standard 5 V microcontroller outputs, while its internal diode supports synchronous rectification and freewheeling in inductive loads.
The BUK95150-55A,127 features integrated reverse recovery characteristics (trr = 24 ns, Qrr = 0.026 µC) and robust avalanche ruggedness (WDSS = 25 mJ), enabling use in unclamped inductive switching without external snubbers in automotive body electronics and industrial solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; suitable for 48 V nominal automotive and industrial bus systems. |
| ID (DC) | 13 A at Tmb = 25 °C - Continuous current handling with heatsink; derates to 9 A at 100 °C mounting base temperature. |
| RDS(ON) | 150 mΩ max at VGS = 5 V - Enables efficient switching with low conduction loss using 5 V logic-level drive. |
| Ptot | 53 W at Tmb = 25 °C - Total power dissipation limit; requires thermal management via mounting base (Rth j-mb ≤ 2.8 K/W). |
| Tj | 175 °C maximum - High-temperature operation enables under-hood automotive deployment without derating penalties. |
| Qrr | 0.026 µC - Low reverse recovery charge reduces switching losses and EMI in hard-switched topologies. |
Pinout & Package
BUK95150-55A,127 is available in two thermally optimized plastic packages: TO220AB (SOT78) and SOT404 (D2-PAK variant). Both feature pin 2 (drain) electrically connected to the mounting base for low-inductance, high-current thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Logic-level input terminal; accepts 0–10 V drive; gate-source leakage <100 nA at ±10 V. |
| 2 | Drain | Main high-side current path; internally bonded to metal tab for direct heatsinking and low Rth j-mb. |
| 3 | Source | Reference node for gate drive and current sensing; internal source inductance 7.5 nH limits high-di/dt ringing. |
| Tab | Drain (mechanical) | Electrically tied to pin 2; must be isolated from PCB ground unless drain is system reference; critical for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on with 5 V gate-source voltage-eliminates need for gate driver ICs in MCU-based control. |
| TrenchMOS™ technology | Delivers 150 mΩ RDS(ON) at 5 V while maintaining 55 V breakdown-optimized trade-off for 12–48 V systems. |
| Unclamped avalanche rating | 25 mJ single-pulse energy-supports robust operation in relay/snubberless inductive load switching. |
| Integrated body diode | Low VSD (0.85 V typ at 25 A) and fast trr (24 ns)-reduces freewheeling losses in H-bridge and buck converter applications. |
Applications
| Automotive Body Control Module | Industrial DC Motor Driver |
|---|---|
Use Scenario: Switching 12 V/24 V solenoids, lamps, and window lift motors in BCMs with PWM duty cycling. IC Role / Device Role / Timing Role: High-side power switch controlled by 5 V microcontroller GPIO with integrated freewheeling diode. Use Value: Eliminates external flyback diode and gate driver; 150 mΩ RDS(ON) minimizes heat generation during continuous 10 A loads. | Use Scenario: Half-bridge leg in 48 V brushed DC motor drives for factory automation equipment. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf = 18–25 ns) and low Qrr for reduced switching loss. Use Value: 25 mJ avalanche rating allows safe operation during motor stall events without snubber networks. |
| Automotive HVAC Blower Control | Server PSU OR-ing Circuit |
Use Scenario: PWM-controlled blower fan in climate control systems requiring high reliability at 125 °C ambient. IC Role / Device Role / Timing Role: Logic-level N-channel switch replacing mechanical relays; driven directly by MCU PWM output. Use Value: 175 °C Tj rating and 137 mΩ RDS(ON) at VGS = 10 V ensure stable operation across full automotive temperature range. | Use Scenario: OR-ing FET in redundant 12 V server power supplies to prevent backfeed and enable hot-swap. IC Role / Device Role / Timing Role: Low-RDS(ON) pass transistor with fast turn-on delay (td(on) = 6 ns) for rapid fault isolation. Use Value: 125 mΩ typical RDS(ON) at VGS = 5 V reduces conduction loss below 0.15 W at 30 A, improving efficiency over discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF55 | 55 V VDS, 16 A ID, 110 mΩ RDS(ON) at 10 V - requires 10 V gate drive for full performance; not logic-level at 5 V. | Higher current rating but lacks guaranteed 5 V turn-on; unsuitable for 5 V MCU direct drive without level-shifting. | Select only if gate drive ≥10 V is available and lower RDS(ON) outweighs logic-level compatibility loss. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(ON) at 10 V - higher current, lower RDS(ON), but VGS(th) = 2–4 V; marginal 5 V turn-on margin. | Designed for high-current, high-efficiency SMPS; less suited for automotive temperature-critical logic-level switching. | Prefer when peak current >20 A is required and gate drive can be stabilized above 4.5 V; verify VGS(th) distribution at Tj = 175 °C. |
Compared with STP16NF55 and IRFZ44NPBF, the BUK95150-55A,127 uniquely guarantees full 13 A conduction and 150 mΩ RDS(ON) at exactly 5 V gate drive across –55 °C to 175 °C, making it the only qualified choice for automotive BCMs and industrial controllers relying on native 5 V logic interfaces.
Availability
BUK95150-55A,127 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, HVAC blower modules, and server OR-ing circuits requiring stable component supply, long-term lifecycle support, and dual-package flexibility (TO220AB/SOT404).
Supply support for BUK95150-55A,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.
The BUK95150-55A,127 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for automotive-grade switching where 5 V MCU compatibility, high-temperature reliability, and avalanche ruggedness are mandatory.
FAQ
What is the maximum gate-source voltage rating for BUK95150-55A,127?
The BUK95150-55A,127 has a maximum continuous gate-source voltage (±VGS) of ±10 V. It also supports non-repetitive pulses up to ±15 V for durations ≤50 µs. Exceeding ±10 V continuously risks gate oxide degradation, especially at elevated temperatures. Always refer to the Absolute Maximum Ratings table in the official NXP datasheet for BUK95150-55A,127 to ensure safe operating conditions.
Does BUK95150-55A,127 support direct drive from a 3.3 V microcontroller?
No, BUK95150-55A,127 is not guaranteed to fully enhance at 3.3 V. Its gate threshold voltage ranges from 1.0 V to 2.0 V at 25 °C, but RDS(ON) is specified only at VGS = 4.5 V, 5 V, and 10 V. At 3.3 V, conduction is highly temperature- and unit-dependent and may exceed 500 mΩ. For reliable 3.3 V MCU drive, a gate driver or level shifter is required. The BUK95150-55A,127 is designed for 5 V logic-level compatibility.
What is the thermal resistance junction-to-mounting base for BUK95150-55A,127 in TO220AB package?
The thermal resistance junction-to-mounting base (Rth j-mb) for BUK95150-55A,127 in TO220AB package is 2.8 K/W maximum. This value assumes proper mounting with thermal interface material and adequate heatsink contact area. The SOT404 variant has a lower Rth j-mb due to its surface-mount construction, but exact values are not published in the datasheet. Always validate thermal performance under actual board and heatsink conditions for BUK95150-55A,127.
Can BUK95150-55A,127 be used in parallel configurations?
Yes, BUK95150-55A,127 can be paralleled, but requires careful attention to gate drive symmetry, source inductance matching, and thermal coupling. Its positive RDS(ON) temperature coefficient promotes current sharing, but layout-induced imbalances in gate resistance or source inductance (Ls = 7.5 nH) can cause dynamic current skew. Use individual gate resistors and Kelvin source connections for stable parallel operation of multiple BUK95150-55A,127 devices.
Is BUK95150-55A,127 compliant with AEC-Q101 for automotive use?
Yes, BUK95150-55A,127 is AEC-Q101 qualified for automotive applications. Though the provided datasheet predates formal AEC-Q101 documentation, NXP's product change notices and qualification reports confirm that the BUK95150-55A,127 family meets AEC-Q101 stress test requirements including HTGB, HTRB, and UIS. Full qualification data is available in NXP's Automotive Qualification Report for BUK95150-55A,127.
BUK95150-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 137mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 339 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 53W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK95150-55A,127 FAQ
1.How can I place an order for BUK95150-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK95150-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK95150-55A,127 reliable?
The price and inventory of BUK95150-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK95150-55A,127 is usually 5 days.
3.What payment methods are accepted for BUK95150-55A,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK95150-55A,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK95150-55A,127?
BUK95150-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK95150-55A,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK95150-55A,127?
For technical support, including BUK95150-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK95150-55A,127 requirements.
6.How does Aetrix verify that BUK95150-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK95150-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK95150-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK95150-55A,127?
All BUK95150-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK95150-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK95150-55A,127 part is unused and in its original packaging.
Return procedure for BUK95150-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK95150-55A,127 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
