Nexperia USA Inc. BUK9515-100A,127
- Part No.:
- BUK9515-100A,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9515-100A,127.pdf
- Description:
- MOSFET N-CH 100V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,361
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Product details
Overview
BUK9515-100A from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, designed for automotive-critical power switching. It delivers 100 V drain-source voltage rating, 75 A continuous drain current at Tmb = 25 °C, 11.5 mΩ RDS(on) at VGS = 10 V/ID = 25 A/Tj = 25 °C, and AEC-Q101 qualification for under-hood motor control and battery disconnect applications.
For engineers reviewing the BUK9515-100A datasheet, BUK9515-100A pinout, BUK9515-100A application, or BUK9515-100A equivalent, this page provides verified thermal resistance (Rth(j-mb) = 0.65 K/W), avalanche energy (120 mJ unclamped), gate threshold (1.5 V typ), diode forward voltage (0.85 V at 25 A), and SOA curves - all critical for high-reliability 12 V/24 V automotive power stage design.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility (VGS(th) = 1–2 V, fully enhanced at 5 V). Its mounting base (pin 2) is internally connected to the drain, enabling direct heatsink coupling and minimizing thermal impedance.
The integrated source-drain diode supports freewheeling in inductive loads, with 1.1 V forward voltage at 75 A and 60 ns reverse recovery time. Avalanche ruggedness is characterized for unclamped inductive switching at 35 A, supporting robust operation in motor drive fault conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - supports 24 V automotive systems with ≥2× bus voltage margin for load dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - enables high-current DC motor drivers and battery main contactor replacement without forced air cooling. |
| RDS(on) | 11.5 mΩ typ at VGS = 10 V - yields ≤2.1 W conduction loss at 45 A, reducing thermal stress in compact enclosures. |
| EAS | 120 mJ non-repetitive avalanche energy - allows safe single-pulse inductive turn-off in starter solenoid or fuel pump drivers. |
| Rth(j-mb) | 0.65 K/W - enables junction-to-heatsink temperature rise of only 48.8 °C at 75 W dissipation, simplifying thermal design. |
| VGS(th) | 1.5 V typical - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO, eliminating level-shifter requirement. |
| QG | ~80 nC typical - supports 100 kHz PWM switching with <1 W gate drive loss using 5 Ω driver impedance. |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted base and 1 mounting hole; 3-lead configuration. Mounting base (mb) is electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; requires ≤10 V drive; gate leakage <100 nA ensures low static power in always-on modules. |
| 2 (D / mb) | Drain / Mounting Base | Main high-side power path; base connection enables low-inductance heatsinking and eliminates separate drain tab routing. |
| 3 (S) | Source | Power return node; internal source inductance 7.5 nH minimizes ringing during fast switching in BLDC gate drivers. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood use including temperature cycling (-40 °C to +175 °C), humidity, and mechanical shock per JESD47. |
| Low RDS(on) at 5 V drive | 12 mΩ max at VGS = 5 V/ID = 25 A - enables direct MCU interface in 12 V body control modules without gate boosters. |
| Integrated avalanche capability | 120 mJ EAS - eliminates need for external clamping diodes in solenoid and relay drivers, reducing BOM count. |
| Optimized for thermal transfer | Rth(j-mb) = 0.65 K/W - allows >200 W peak power handling with standard aluminum heatsinks, supporting compact ECU designs. |
| Fast diode recovery | trr = 60 ns - reduces switching losses and EMI in bidirectional DC-DC converters used in 48 V mild hybrid architectures. |
Applications
| Engine Cooling Fan Control | 12 V Battery Disconnect Switch |
|---|---|
|
Use Scenario: PWM-controlled brushless DC fan module in engine bay, operating continuously at ambient up to 105 °C. IC Role / Device Role / Timing Role: High-side power switch managing 60 A peak motor current; operates at 20 kHz with <1 µs dead-time tolerance. Use Value: 11.5 mΩ RDS(on) limits conduction loss to 36 W at full load, while 0.65 K/W thermal resistance maintains Tj < 150 °C with passive heatsink. |
Use Scenario: Solid-state replacement for mechanical battery isolation relay in start-stop systems, handling 75 A cranking surges. IC Role / Device Role / Timing Role: Bidirectional blocking switch isolating starter circuit from rest-of-vehicle; must survive 35 A unclamped inductive turn-off. Use Value: 120 mJ avalanche energy rating absorbs energy from starter coil collapse without failure, eliminating snubber components. |
| Electric Power Steering (EPS) Motor Driver | Commercial Vehicle Air Suspension Compressor |
|
Use Scenario: Half-bridge high-side switch in 3-phase EPS inverter, exposed to vibration and thermal cycling over 15-year vehicle life. IC Role / Device Role / Timing Role: Logic-level gate-driven power stage synchronized to 10 kHz PWM carrier; requires <200 ns propagation delay stability. Use Value: AEC-Q101 qualification and 175 °C max junction temperature ensure reliability across -40 °C to +125 °C ambient, meeting ISO 26262 ASIL-B requirements. |
Use Scenario: 24 V compressor motor control in Class 8 trucks, where ambient reaches 85 °C and duty cycle exceeds 60%. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology driving 5 kW induction motor; conducts 75 A continuously. Use Value: 75 A rated current at Tmb = 25 °C de-rates predictably to 53 A at Tmb = 100 °C, enabling accurate thermal margining for sealed chassis mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 3.2 mΩ RDS(on), PowerFLAT 8x8 package - lower RDS(on) but no mounting base; requires PCB copper area for thermal management. | Preferred for space-constrained ECUs where board-level thermal spreading is feasible; unsuitable for bolted heatsink mounting. | Select when board real estate allows large thermal pad and system layout permits surface-mount assembly. |
| IRFB4115PBF | 150 V, 115 A, 11.5 mΩ RDS(on), TO-220AB - higher voltage rating but not AEC-Q101 qualified; 1.8 V VGS(th) min. | Suitable for industrial 48 V systems but lacks automotive qualification; gate drive margin reduced at low temperatures. | Choose only for non-automotive applications requiring 150 V rating and where AEC compliance is not mandated. |
Compared with STL220N10F7, BUK9515-100A offers bolt-down heatsink compatibility and AEC-Q101 assurance at the cost of higher RDS(on); versus IRFB4115PBF, it trades voltage headroom for guaranteed automotive qualification and tighter VGS(th) distribution.
Availability
BUK9515-100A is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and commercial vehicle power distribution requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BUK9515-100A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a Dutch semiconductor company specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with global manufacturing and quality certification to IATF 16949.
This device belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for high-reliability, high-current switching in engine, transmission, and chassis control modules where AEC-Q101 compliance and thermal robustness are mandatory.
FAQ
Is BUK9515-100A suitable for high-frequency PWM applications above 50 kHz?
Yes - its 6500 pF Ciss, 45 ns td(on), and 130 ns tr support efficient 100 kHz operation with appropriate gate drive strength. However, switching losses increase significantly above 200 kHz due to Crss-dependent Miller plateau effects; thermal derating must be applied per Figure 5 SOA curves.
Can BUK9515-100A be used in parallel configurations for higher current handling?
Yes - its positive RDS(on) temperature coefficient (Figure 12 shows ~1.8× increase from 25 °C to 175 °C) enables inherent current sharing. For stable paralleling, match gate resistors within ±5 %, minimize layout asymmetry, and ensure identical heatsink contact pressure across all devices.
What is the maximum allowable mounting base temperature for continuous 75 A operation?
Tmb must not exceed 25 °C for full 75 A rating, as specified in Table 4. At Tmb = 100 °C, continuous current is derated to 53 A. This limit is defined by thermal resistance and package construction - exceeding it risks solder joint fatigue and accelerated parametric drift.
Does the source-drain diode support synchronous rectification in DC-DC converters?
No - while the intrinsic body diode has 60 ns trr and 0.85 V VSD, it lacks optimized charge characteristics for synchronous rectification. Its Qr = 0.24 µC and lack of soft recovery make it unsuitable for high-efficiency buck converters; external Schottky or MOSFET synchronous switches are required.
BUK9515-100A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9515-100A,127 FAQ
1.How can I place an order for BUK9515-100A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9515-100A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK9515-100A,127 is sourced from the original manufacturer or authorized distributors?
All BUK9515-100A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9515-100A,127 meets industry standards.
7.What is the process for return or replacement of BUK9515-100A,127?
All BUK9515-100A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9515-100A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9515-100A,127 part is unused and in its original packaging.
Return procedure for BUK9515-100A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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