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NXP Semiconductors BUK9516-55A,127
- Part No.:
- BUK9516-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9516-55A,127.pdf
- Description:
- MOSFET N-CH 55V 66A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,743
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Product details
Overview
BUK9516-55A from Nexperia is a logic-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78A) package, designed for automotive-critical switching with 55 V VDS, 66 A ID (Tmb = 25 °C), and 10 mΩ RDS(on) at VGS = 10 V and 25 °C. It delivers low conduction loss in high-current DC loads such as engine control modules and body electronics.
For engineers reviewing the BUK9516-55A datasheet, BUK9516-55A pinout, BUK9516-55A application, or BUK9516-55A equivalent, this page provides verified technical context, thermal performance data, avalanche ruggedness (120 mJ), gate threshold behavior across temperature, and validated alternatives for automotive-grade power switching designs.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance while maintaining robust avalanche capability and AEC-Q101 qualification. Its gate threshold voltage ranges from 1.0 V to 2.0 V at 25 °C and remains functional down to 0.5 V at 175 °C, enabling reliable turn-on with standard 5 V logic drivers.
Thermal resistance from junction to mounting base is 1.1 K/W, supporting high-power dissipation when heatsink-mounted. The internal drain and source inductances (3.5–4.5 nH and 7.5 nH) are characterized for accurate switching loss modeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; suitable for 42 V automotive systems and 36 V industrial rails. |
| ID (Tmb = 25 °C) | 66 A - Continuous drain current rating at cold mounting base; defines maximum steady-state load handling without derating. |
| RDS(on) (VGS = 10 V) | 10–15 mΩ - Confirmed on-resistance at full gate drive; enables <1 W conduction loss at 30 A. |
| RDS(on) (VGS = 5 V) | 12.5–16 mΩ - Verified logic-level performance; ensures full enhancement with 5 V microcontroller outputs. |
| EDS(AL)S | 120 mJ - Non-repetitive unclamped avalanche energy; supports inductive load switching without external snubbers in many automotive solenoid applications. |
| VGS(th) | 1.0–2.0 V (25 °C) - Gate threshold range confirming reliable turn-on below 2.5 V; critical for low-voltage wake-up and fail-safe operation. |
| Rth(j-mb) | 1.1 K/W - Junction-to-mounting-base thermal resistance; enables direct thermal path to heatsink for sustained 138 W power dissipation. |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted tab; 3-lead configuration; mounting base electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 5 V logic-level drive; gate leakage <100 nA at ±10 V. |
| 2 (D) | Drain | Main power output terminal; internally bonded to mounting base; requires isolation from heatsink unless system ground referenced. |
| 3 (S) | Source | Power return path; low-inductance bond wire (7.5 nH); used as reference for gate drive and current sensing. |
| Mounting Base (mb) | Drain Connection | Electrically tied to drain pin; primary thermal interface; must be mechanically secured to heatsink with thermal interface material. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-critical applications including engine management, transmission control, and ADAS power stages. |
| Logic-level gate drive (VGS(th) ≤ 2.0 V) | Enables direct interfacing with 3.3 V/5 V MCUs without level-shifting circuitry, reducing BOM count and layout complexity. |
| Low RDS(on) at 5 V drive | 12.5–16 mΩ ensures <1.6 W conduction loss at 40 A, improving efficiency and thermal margin in space-constrained modules. |
| 120 mJ avalanche energy | Supports robust switching of inductive loads (e.g., fuel injectors, relays) without external clamping, simplifying protection design. |
| 1.1 K/W Rth(j-mb) | Allows >100 W continuous power dissipation with modest heatsinking, enabling compact mechanical integration in ECU housings. |
Applications
| Engine Control Unit (ECU) Load Switching | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Switching 12 V/24 V solenoids, fuel injectors, and cooling fans in engine bay environments with ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed DC loads; operates in PWM or on/off mode with <68 ns turn-on delay. Use Value: Low RDS(on) minimizes self-heating during extended duty cycles; avalanche ruggedness eliminates need for external TVS in injector drive circuits. |
Use Scenario: Managing door locks, window lift motors, and interior lighting in centralized body electronics units. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays; handles inrush currents up to 263 A (pulsed) during motor startup. Use Value: 66 A continuous rating supports multi-load consolidation; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime. |
| Industrial 42 V DC Power Distribution | Off-Highway Vehicle (OHV) Battery Management |
|
Use Scenario: Main power switching in 36–48 V industrial battery systems for AGVs, forklifts, and telecom backup supplies. IC Role / Device Role / Timing Role: Primary load disconnect switch with fast fault response; leverages 55 V VDS margin above nominal 42 V rail. Use Value: 138 W Ptot and 1.1 K/W thermal resistance enable high-current operation without forced air cooling. |
Use Scenario: Isolation and protection of auxiliary battery banks in construction and agricultural machinery operating under vibration and wide temperature swings. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected power path controller; uses source-drain diode forward voltage (0.85–1.2 V) for passive OR-ing. Use Value: VGS(th) stability from −55 °C to 175 °C ensures cold-cranking functionality and hot-soak reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 60 V VDS, 220 A ID (Tc = 25 °C), 1.8 mΩ RDS(on); DFN8 5×6 mm package; no mounting base. | Higher current density but surface-mount only; unsuitable for TO-220AB socketed or heatsink-clamped legacy designs. | Select when board space is constrained and thermal interface allows direct PCB copper pad cooling. |
| IRF1404ZPBF | 40 V VDS, 202 A ID, 3.8 mΩ RDS(on); TO-220AB package; not AEC-Q101 qualified. | Lacks automotive qualification and has lower voltage rating; acceptable for non-safety-critical industrial switching only. | Choose only for cost-sensitive, non-automotive applications where 40 V margin suffices and qualification is not required. |
Compared with STL220N5LF8AG and IRF1404ZPBF, the BUK9516-55A uniquely balances AEC-Q101 compliance, 55 V rating, TO-220AB mechanical compatibility, and verified 5 V logic-level operation-making it the only drop-in solution for upgrading legacy automotive power stages without PCB or heatsink redesign.
Availability
BUK9516-55A is available at Aetrix Electronics and suitable for automotive ECUs, body control modules, and industrial 42 V power distribution systems requiring stable component supply and long-term lifecycle support.
Supply support for BUK9516-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The BUK9516-55A belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for robust, low-loss switching in safety-critical vehicle subsystems.
FAQ
What is the maximum gate-source voltage rating for BUK9516-55A?
The BUK9516-55A has a continuous gate-source voltage rating of ±10 V and a peak pulsed rating of ±15 V (tp ≤ 50 µs). Exceeding ±10 V continuously risks gate oxide degradation; design must include clamping or limiting for transient conditions. This specification is confirmed in Table 4 (Limiting values) of the official Nexperia datasheet for BUK9516-55A.
Is BUK9516-55A suitable for high-frequency PWM applications?
The BUK9516-55A exhibits td(on) = 45–68 ns, tr = 130–195 ns, td(off) = 400–560 ns, and tf = 130–182 ns at VGS = 5 V, making it appropriate for PWM frequencies up to ~100 kHz in hard-switched converters. Its Ciss = 2314–3085 pF and Crss = 243–333 pF support moderate-speed switching with manageable gate drive requirements. These values are measured per Table 6 in the BUK9516-55A datasheet.
Does BUK9516-55A have an integrated body diode, and what is its forward voltage?
Yes, the BUK9516-55A includes a monolithic source-drain body diode with VSD = 0.85–1.2 V at IS = 25 A and 25 °C, rising to ~1.1 V at 66 A. This diode supports freewheeling in inductive loads and reverse-polarity protection. Data is specified in Table 6 (Characteristics) under "Source-drain diode" section of the BUK9516-55A datasheet.
What is the thermal resistance from junction to ambient for BUK9516-55A in free air?
The BUK9516-55A has a typical Rth(j-a) of 60 K/W in free air, meaning it can dissipate ~2.3 W continuously without heatsinking before reaching 175 °C junction temperature. This value assumes no PCB copper area or airflow; actual performance improves significantly with heatsink mounting (Rth(j-mb) = 1.1 K/W). Confirmed in Table 5 of the BUK9516-55A datasheet.
How does the RDS(on) of BUK9516-55A change with temperature and gate voltage?
RDS(on) increases with junction temperature and decreases with higher VGS: at VGS = 5 V and Tj = 175 °C, RDS(on) rises to ≤32 mΩ (vs. 12.5–16 mΩ at 25 °C); at VGS = 10 V and 25 °C, it drops to 10–15 mΩ. This behavior is documented in Table 6 and Fig 11 of the BUK9516-55A datasheet, enabling accurate thermal design margining.
BUK9516-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3085 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 138W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9516-55A,127 FAQ
1.How can I place an order for BUK9516-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9516-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9516-55A,127 reliable?
The price and inventory of BUK9516-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9516-55A,127 is usually 5 days.
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4.How is shipping managed for BUK9516-55A,127?
BUK9516-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9516-55A,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9516-55A,127?
For technical support, including BUK9516-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9516-55A,127 requirements.
6.How does Aetrix verify that BUK9516-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK9516-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9516-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK9516-55A,127?
All BUK9516-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9516-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9516-55A,127 part is unused and in its original packaging.
Return procedure for BUK9516-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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