NXP Semiconductors BUK9516-75B,127

Overview

BUK9516-75B from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 75 V V_DS, 67 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers low R_DS(on) of 14 mΩ (typ.) at V_GS = 5 V and T_j = 25 °C, enabling efficient 12 V/24 V automotive load switching in thermally demanding environments.

For engineers reviewing the BUK9516-75B datasheet, BUK9516-75B pinout, BUK9516-75B application, or BUK9516-75B equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) max 2.3 V), avalanche ruggedness (140 mJ), thermal resistance (R_th(j-mb) = 0.95 K/W), and automotive qualification - critical for motor, lamp, and solenoid control in safety-relevant systems.

Technical Context

This device uses TrenchMOS technology to achieve low conduction losses and stable threshold voltage across temperature (V_GS(th) = 0.5–2.3 V from −55 °C to 175 °C). Its gate charge profile (Q_G(tot) = 35 nC typ., Q_GD = 14 nC) supports fast, controllable switching with minimal Miller effect in high-frequency PWM applications.

The mounting base (pin 2) is internally connected to the drain, enabling direct heatsink attachment and low-inductance power path design. Internal parasitic inductances are specified (L_D = 3.5–4.5 nH, L_S = 7.5 nH), supporting accurate layout modeling for EMI-sensitive automotive power stages.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78A) - plastic single-ended package with heatsink-mounted mounting base (pin 2), 3-lead configuration, and one mounting hole. Mounting base is electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP60NF06L and IRFZ44NPBF, the BUK9516-75B provides higher voltage margin (75 V), automotive qualification, and superior thermal performance (R_th(j-mb) = 0.95 K/W), making it the only option suitable for safety-critical 24 V/42 V automotive power switching with sustained high-current operation.

Availability

BUK9516-75B is available at Aetrix Electronics and suitable for automotive body control modules, industrial solenoid drivers, and 12 V/24 V DC motor control systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for BUK9516-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK9516-75B belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for high-reliability, high-current switching in thermally constrained automotive environments.

FAQ

What is the maximum gate-source voltage rating for BUK9516-75B?

The BUK9516-75B has a gate-source voltage rating of ±15 V, meaning it can withstand −15 V to +15 V between gate and source terminals without damage. This allows safe operation with standard logic-level drivers and protects against negative voltage spikes during switching transitions. Exceeding this range risks permanent gate oxide degradation. The BUK9516-75B datasheet specifies this absolute maximum in Table 4 under limiting values.

Is BUK9516-75B suitable for high-frequency PWM motor control?

Yes, the BUK9516-75B supports high-frequency PWM operation due to its fast switching characteristics: t_d(on) = 30 ns, t_r = 102 ns, t_d(off) = 101 ns, and t_f = 57 ns at V_GS = 5 V. Its low Q_GD (14 nC) and optimized capacitance profile (C_iss = 3026 pF, C_rss = 140 pF) minimize Miller effect, enabling clean turn-off in 20–100 kHz motor control loops. The BUK9516-75B maintains stable R_DS(on) up to 175 °C, ensuring consistent performance under thermal load.

Does BUK9516-75B have an integrated body diode, and what are its characteristics?

Yes, the BUK9516-75B includes an inherent source-drain body diode with forward voltage V_SD = 0.85 V (typ.) at I_S = 25 A and T_j = 25 °C. Its reverse recovery time t_rr is 96 ns and recovered charge Q_r is 138 nC under specified test conditions. This diode enables freewheeling in inductive loads like motors and solenoids, though external Schottky diodes may be added for higher efficiency in critical applications. These parameters are confirmed in Table 6 of the BUK9516-75B datasheet.

What thermal interface considerations apply to BUK9516-75B's mounting base?

The mounting base (pin 2) of the BUK9516-75B is electrically connected to the drain and serves as the primary thermal path. To achieve the specified R_th(j-mb) = 0.95 K/W, a thermally conductive interface material (e.g., thermal paste or pad) must be used between the flat mounting surface and heatsink, with uniform mechanical pressure applied via the single mounting hole. Surface flatness and cleanliness are critical; any air gap increases effective thermal resistance. This thermal design requirement is documented in Figure 4 and Table 5 of the BUK9516-75B data sheet.

Can BUK9516-75B replace older NXP BUK95xx parts in existing designs?

The BUK9516-75B is a direct functional and pin-compatible replacement for earlier versions within the same BUK9516-75x family (e.g., BUK9516-75, BUK9516-75A), sharing identical TO-220AB (SOT78A) package, pinout, and electrical specifications. Nexperia maintains backward compatibility for automotive-grade variants, and the BUK9516-75B retains all AEC-Q101 qualifications and thermal ratings of its predecessors. No PCB or schematic changes are required when upgrading to the BUK9516-75B, as confirmed in the ordering information and revision history sections of the BUK9516-75B datasheet.