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NXP Semiconductors BUK951R9-40E,127
- Part No.:
- BUK951R9-40E,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK951R9-40E,127.pdf
- Description:
- MOSFET N-CH 40V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,362
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Product details
Overview
BUK951R9-40E from NXP Semiconductors is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 40 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 1.55 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive power distribution and motor control circuits.
For engineers reviewing the BUK951R9-40E datasheet, BUK951R9-40E pinout, BUK951R9-40E application, or BUK951R9-40E equivalent, this page delivers verified electrical parameters, thermal performance data, gate drive compatibility at 5 V logic levels, avalanche ruggedness (1008 mJ), and automotive-grade reliability context - all critical for 12 V start-stop systems and transmission control designs.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with true logic-level gate drive capability: VGS(th) ≥ 0.5 V at Tj = 175 °C ensures reliable turn-on under extreme thermal stress. Its mounting base (pin mb) is internally connected to the drain, enabling direct heatsink coupling and minimizing thermal resistance (Rth(j-mb) = 0.43 K/W).
The device supports repetitive avalanche operation and features integrated source-drain diode with 57 ns reverse recovery time and 97 nC recovered charge. Dynamic parameters include 40.9 nC QGD, 12300–16400 pF Ciss, and 120 nC total gate charge - key for optimizing switching loss in high-frequency PWM applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - defines safe blocking voltage in 12 V automotive systems with load-dump transients. |
| ID (continuous) | 120 A at Tmb = 25 °C - package-limited current capacity requiring external heatsinking for sustained operation. |
| RDS(on) | 1.55 mΩ typ @ VGS = 5 V, Tj = 25 °C - enables <1 W conduction loss at 25 A, critical for efficiency in high-current solenoid drivers. |
| Tj max | 175 °C - supports operation in engine bay environments without derating below ambient extremes. |
| EAS | 1008 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance during inductive load switching. |
| QG(tot) | 120 nC - determines gate driver current requirement (e.g., ~1.2 A peak for 100 ns turn-on with 5 Ω gate resistor). |
| Rth(j-mb) | 0.43 K/W - enables >300 W dissipation with 130 K temperature rise from junction to heatsink surface. |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base (pin mb), 3 leads, and 1 mounting hole. Mounting base is electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; requires ≤5 V for full enhancement; threshold stable to 175 °C. |
| 2 (D) | Drain | Main high-side power path; internally bonded to mounting base for low-inductance heatsink connection. |
| 3 (S) | Source | Power return node; referenced to gate drive ground; forms common node with internal body diode cathode. |
| mb | Mounting base | Electrically tied to drain; provides primary thermal path to heatsink; must be isolated from system ground unless drain is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity, and mechanical shock per automotive reliability standards. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures turn-on margin even under worst-case thermal conditions in engine compartments. |
| Repetitive avalanche rating | Enables robust operation in inductive switching applications without external snubbers in many cases. |
| 175 °C junction rating | Permits uninterrupted operation in thermally demanding locations such as near exhaust manifolds or transmission housings. |
| Low RDS(on) × QG figure of merit | ~186 Ω·nC - balances conduction and switching losses for high-efficiency 12 V power switching. |
Applications
| Engine Start-Stop Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: High-current switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent stop-start cycles. IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter circuit; handles 120 A surges with minimal voltage drop. Use Value: Low RDS(on) reduces I²R heating during repeated cranking events; 175 °C rating prevents thermal shutdown during back-to-back starts. |
Use Scenario: Precision PWM control of hydraulic solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-side switch modulating 12 V supply to solenoid coils at 1–10 kHz frequencies. Use Value: Fast switching (tf = 119 ns) and low QGD enable clean edge control; avalanche rating absorbs inductive kickback without clamping diodes. |
| 12 V Battery Disconnect Switch | Electric Power Steering Motor Driver |
|
Use Scenario: Isolation of auxiliary battery banks or safety-critical subsystems during fault conditions or ignition-off states. IC Role / Device Role / Timing Role: Bidirectional blocking switch (with external diode) or unidirectional high-side disconnect element. Use Value: 40 V VDS withstands ISO 7637-2 load-dump spikes; low leakage (<500 µA at 175 °C) ensures minimal standby drain. |
Use Scenario: Half-bridge high-side switch in EPS motor phase-legs, handling regenerative braking currents up to 100 A. IC Role / Device Role / Timing Role: High-current, high-reliability power stage component in motor inverter modules. Use Value: Repetitive avalanche capability tolerates motor regeneration transients; TO-220AB package allows direct bolt-down to aluminum chassis for thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 1.3 mΩ @ 10 V; requires 10 V gate drive for full spec; no AEC-Q101 certification stated. | Better conduction loss at higher gate voltage; unsuitable for 5 V-only logic interfaces without level shift. | Select only if gate drive supports ≥10 V and automotive qualification is not required. |
| ON Semiconductor NTMFS5C675NL | 40 V, 100 A, RDS(on) = 1.75 mΩ @ 5 V; AEC-Q101 qualified; PowerTrench® technology; SO-8FL package (surface-mount). | Lower current rating and different thermal interface; lacks mounting base for bolted heatsinking. | Prefer for space-constrained PCB layouts where soldered thermal pads suffice and 120 A peak is not needed. |
Compared with STL220N4F7AG and NTMFS5C675NL, the BUK951R9-40E uniquely combines AEC-Q101 compliance, true 5 V logic-level operation, 120 A current capability, and TO-220AB bolt-down thermal design - making it the only option among the three suitable for high-power, high-reliability automotive solenoid and starter control where gate voltage headroom and mechanical heatsinking are constrained.
Availability
BUK951R9-40E is available at Aetrix Electronics and suitable for automotive power distribution, start-stop systems, and transmission control applications requiring stable component supply across extended production lifecycles.
Supply support for BUK951R9-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK951R9-40E belongs to NXP's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems where reliability under thermal and electrical stress is non-negotiable.
FAQ
What is the maximum continuous drain current rating for BUK951R9-40E?
The BUK951R9-40E has a maximum continuous drain current of 120 A when the mounting base temperature (Tmb) is maintained at 25 °C. This rating is package-limited and decreases with rising Tmb; at 100 °C Tmb, the rating remains 120 A per datasheet limiting values, but practical derating is required based on thermal design. The BUK951R9-40E achieves this using its low Rth(j-mb) of 0.43 K/W and TO-220AB mounting base.
Is BUK951R9-40E compatible with 5 V logic-level gate drive?
Yes, the BUK951R9-40E is a true logic-level MOSFET: it delivers 1.55 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C, and maintains functional turn-on with VGS(th) ≥ 0.5 V even at Tj = 175 °C. This eliminates need for gate drivers or level shifters in standard 5 V MCU or ASIC output interfaces - a core design advantage of the BUK951R9-40E in automotive body control modules.
Does BUK951R9-40E meet automotive qualification standards?
Yes, the BUK951R9-40E is fully qualified to AEC-Q101 for automotive applications. It has undergone rigorous stress testing including temperature cycling, humidity, mechanical shock, and high-temperature operating life - confirming suitability for under-hood and transmission-control environments. This qualification is explicitly stated in the product profile section of the official NXP datasheet for BUK951R9-40E.
What is the thermal resistance from junction to mounting base for BUK951R9-40E?
The BUK951R9-40E has a maximum thermal resistance of Rth(j-mb) = 0.43 K/W from junction to mounting base, measured under specified test conditions. This low value is enabled by the direct die-to-mounting-base construction of the TO-220AB (SOT78A) package and makes the BUK951R9-40E highly effective in bolted heatsink configurations - supporting >300 W power dissipation with manageable temperature rise.
Can BUK951R9-40E handle inductive load switching without external protection?
The BUK951R9-40E is rated for repetitive avalanche operation and specifies 1008 mJ non-repetitive avalanche energy (EAS). While it can absorb single-pulse inductive energy without failure, sustained repetitive avalanche is not recommended without verification via SOA analysis. For robust long-term reliability in solenoid or motor control, external flyback diodes or RC snubbers are still advised - but the BUK951R9-40E's ruggedness significantly reduces protection component count versus non-avalanche-rated MOSFETs.
BUK951R9-40E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 16400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK951R9-40E,127 FAQ
1.How can I place an order for BUK951R9-40E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK951R9-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK951R9-40E,127 reliable?
The price and inventory of BUK951R9-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK951R9-40E,127 is usually 5 days.
3.What payment methods are accepted for BUK951R9-40E,127?
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4.How is shipping managed for BUK951R9-40E,127?
BUK951R9-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK951R9-40E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK951R9-40E,127?
For technical support, including BUK951R9-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK951R9-40E,127 requirements.
6.How does Aetrix verify that BUK951R9-40E,127 is sourced from the original manufacturer or authorized distributors?
All BUK951R9-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK951R9-40E,127 meets industry standards.
7.What is the process for return or replacement of BUK951R9-40E,127?
All BUK951R9-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK951R9-40E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK951R9-40E,127 part is unused and in its original packaging.
Return procedure for BUK951R9-40E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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