Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors BUK9524-55A,127

Part No.:
BUK9524-55A,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK9524-55A,127.pdf
Description:
MOSFET N-CH 55V 46A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,315

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9524-55A from NXP Semiconductors is an AEC-Q101-qualified logic-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 55 V drain-source voltage, 46 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation - designed for automotive power switching of 12 V/24 V loads including motors, lamps, and solenoids.

For engineers reviewing the BUK9524-55A datasheet, BUK9524-55A pinout, BUK9524-55A application, or BUK9524-55A equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) of 20–24 mΩ at VGS = 5 V and Tj = 25 °C, thermal robustness (Rth(j-mb) = 1.4 K/W), and unclamped avalanche energy rating of 76 mJ.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance with logic-level gate drive capability, enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry. Its gate threshold voltage (1.0–2.0 V typ.) and low input capacitance (Ciss = 1361–1815 pF) support fast switching in thermally demanding environments.

The integrated source-drain diode exhibits VSD = 0.85–1.2 V at 25 A and Tj = 25 °C, with reverse recovery time trr = 50 ns and recovered charge Qr = 85 nC - suitable for inductive load commutation in automotive body electronics and chassis control modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V maximum - supports 24 V automotive systems with margin against load-dump transients.
ID (continuous) 46 A at Tmb = 25 °C - enables high-current switching of starter relays, HVAC blowers, and fuel pumps.
RDS(on) 20–24 mΩ at VGS = 5 V, ID = 25 A, Tj = 25 °C - minimizes conduction loss and heatsink requirements.
Tj max 175 °C - qualified for under-hood applications with extended thermal operating range.
Rth(j-mb) 1.4 K/W - enables efficient heat transfer to external heatsink via mounting base (drain-connected).
EDS(AL)S 76 mJ unclamped avalanche energy - provides ruggedness against inductive kickback in motor/solenoid drives.
VGS(th) 1.0–2.0 V typical - ensures reliable turn-on with standard 3.3 V/5 V logic outputs.
Ciss 1361–1815 pF - balances switching speed and gate drive strength for 100 ns-class rise/fall times.

Pinout & Package

Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain terminal; 3-lead configuration with standardized lead pitch and mechanical dimensions per JEDEC SC-46.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control electrode; accepts logic-level drive (VGS = 4.5–10 V); requires <100 nA leakage current handling.
2 (D) Drain Main power output node; electrically tied to mounting base for thermal and electrical connection to heatsink.
3 (S) Source Power return path; referenced to system ground in low-side switch configurations.
Mounting base (mb) Drain extension Thermally and electrically connected to drain pin; must be isolated from chassis unless drain is grounded.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive safety-critical applications including engine control, braking, and lighting systems.
Logic-level gate drive Operates fully enhanced with VGS ≥ 4.5 V - compatible with MCU GPIOs without external level shifters.
Low RDS(on) at 5 V 20–24 mΩ at VGS = 5 V - reduces I²R losses by >30% vs. standard MOSFETs requiring 10 V gate drive.
175 °C junction rating Enables operation in high-ambient zones (e.g., near exhaust, transmission, or battery compartments).
Drain-connected mounting base Provides lowest possible thermal resistance path (1.4 K/W) to external heatsink for sustained high-power duty.
Unclamped avalanche ruggedness 76 mJ energy rating - withstands repetitive inductive switching events without degradation in motor control.

Applications

Automotive Body Control Module 12 V/24 V DC Motor Drive

Use Scenario: Switching door locks, seat adjusters, and sunroof actuators in modern vehicle platforms.

IC Role / Device Role / Timing Role: Low-side power switch controlling brushed DC motor direction and stall current.

Use Value: Logic-level gate drive eliminates need for driver ICs; 175 °C rating ensures reliability in cabin-adjacent enclosures.

Use Scenario: Driving radiator cooling fans, HVAC blower motors, and power steering assist pumps.

IC Role / Device Role / Timing Role: High-current, thermally robust power switch with integrated avalanche protection.

Use Value: 46 A continuous current and 76 mJ avalanche energy enable direct replacement of relay-based solutions.

LED Headlamp Power Stage Industrial Solenoid Control

Use Scenario: PWM dimming and on/off control of high-brightness LED arrays in adaptive front lighting systems.

IC Role / Device Role / Timing Role: Fast-switching, low-loss power stage supporting >1 kHz PWM frequencies.

Use Value: Ciss = 1361–1815 pF and tr/tf ≤ 104/80 ns enable efficient thermal management during dynamic operation.

Use Scenario: Controlling hydraulic valves, pneumatic actuators, and fuel injectors in off-road and commercial vehicles.

IC Role / Device Role / Timing Role: Rugged, high-reliability switch for inductive loads with high dI/dt stress.

Use Value: VGS(th) stability over -55 to +175 °C ensures consistent turn-on behavior across extreme ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF5 55 V, 220 A peak, RDS(on) = 2.2 mΩ @ 10 V - lower on-resistance but requires 10 V gate drive; not logic-level. Requires gate driver IC for 3.3 V/5 V MCU interface; better suited for high-efficiency, non-logic-level designs. Select only if gate drive voltage ≥ 8 V is available and lower conduction loss outweighs added complexity.
IRF3205PBF 55 V, 110 A, RDS(on) = 8.0 mΩ @ 10 V - higher current rating but VGS(th) = 2.0–4.0 V; marginal logic-level compatibility. Limited 5 V drive margin; may exhibit inconsistent turn-on at low temperatures or aging conditions. Use only with verified 5 V gate drive headroom and thermal derating; not recommended for AEC-Q101-critical systems.

Compared with STL220N5LF5 and IRF3205PBF, the BUK9524-55A delivers guaranteed logic-level operation (VGS(th) ≤ 2.0 V), AEC-Q101 qualification, and optimized thermal design for automotive mounting - making it the preferred choice where MCU-native drive, qualification compliance, and thermal integration are mandatory.

Availability

BUK9524-55A is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V motor control, and industrial solenoid actuation requiring stable component supply across production lifecycles.

Supply support for BUK9524-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BUK9524-55A belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for automotive-grade power switching where reliability, thermal performance, and direct MCU interfacing are critical.

FAQ

What is the maximum continuous drain current for BUK9524-55A at 100 °C mounting base temperature?

The BUK9524-55A supports 33 A continuous drain current at Tmb = 100 °C and VGS = 5 V, as specified in Table 4 (Limiting values). This derating reflects thermal constraints at elevated ambient conditions and must be applied in under-hood designs where heatsink temperature exceeds 25 °C.

Is BUK9524-55A suitable for use in a high-side switch configuration?

No - the BUK9524-55A is optimized for low-side switching due to its drain-connected mounting base and standard TO-220AB pinout. High-side implementation would require isolation of the heatsink and additional level-shifting circuitry, which is not supported by the device's architecture or qualification scope.

Does BUK9524-55A have built-in ESD protection on the gate terminal?

The BUK9524-55A datasheet does not specify integrated gate ESD protection diodes. Gate leakage current is rated at ≤100 nA at ±10 V, and absolute maximum VGS is ±10 V - indicating reliance on external gate resistors and layout best practices for ESD robustness in automotive assembly environments.

What is the typical gate charge (QG) of BUK9524-55A at VDD = 14 V?

Figure 10 shows typical gate charge of ~30 nC at VDD = 14 V and VGS = 5 V. While exact QG is not tabulated, this value supports calculation of gate drive power and switching loss in PWM applications using the BUK9524-55A.

Can BUK9524-55A replace BUK9524-55B in existing designs?

No - BUK9524-55B is a distinct variant with different RDS(on) specifications and thermal characteristics. The BUK9524-55A datasheet explicitly separates from earlier combined documents (BUK9524_9624_55A v.1), confirming no cross-qualification or interchangeability between suffix variants.

BUK9524-55A,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
21.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1815 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
105W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK9524-55A,127 FAQ

1.How can I place an order for BUK9524-55A,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9524-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9524-55A,127 reliable?

The price and inventory of BUK9524-55A,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9524-55A,127 is usually 5 days.

3.What payment methods are accepted for BUK9524-55A,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9524-55A,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9524-55A,127?

BUK9524-55A,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9524-55A,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9524-55A,127?

For technical support, including BUK9524-55A,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9524-55A,127 requirements.

6.How does Aetrix verify that BUK9524-55A,127 is sourced from the original manufacturer or authorized distributors?

All BUK9524-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9524-55A,127 meets industry standards.

7.What is the process for return or replacement of BUK9524-55A,127?

All BUK9524-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9524-55A,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9524-55A,127 part is unused and in its original packaging.

Return procedure for BUK9524-55A,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9524-55A,127 Tags

  • BUK9524-55A,127
  • BUK9524-55A,127 PDF
  • BUK9524-55A,127 Datasheet
  • BUK9524-55A,127 Specifications
  • BUK9524-55A,127 Images
  • NXP Semiconductors
  • NXP Semiconductors BUK9524-55A,127
  • Buy BUK9524-55A,127
  • BUK9524-55A,127 Price
  • BUK9524-55A,127 Distributor
  • BUK9524-55A,127 Supplier
  • BUK9524-55A,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER