NXP Semiconductors BUK9524-55A,127
- Part No.:
- BUK9524-55A,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK9524-55A,127.pdf
- Description:
- MOSFET N-CH 55V 46A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,315
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Product details
Overview
BUK9524-55A from NXP Semiconductors is an AEC-Q101-qualified logic-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 55 V drain-source voltage, 46 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation - designed for automotive power switching of 12 V/24 V loads including motors, lamps, and solenoids.
For engineers reviewing the BUK9524-55A datasheet, BUK9524-55A pinout, BUK9524-55A application, or BUK9524-55A equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) of 20–24 mΩ at VGS = 5 V and Tj = 25 °C, thermal robustness (Rth(j-mb) = 1.4 K/W), and unclamped avalanche energy rating of 76 mJ.
Technical Context
This device employs TrenchMOS technology to achieve low on-resistance with logic-level gate drive capability, enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry. Its gate threshold voltage (1.0–2.0 V typ.) and low input capacitance (Ciss = 1361–1815 pF) support fast switching in thermally demanding environments.
The integrated source-drain diode exhibits VSD = 0.85–1.2 V at 25 A and Tj = 25 °C, with reverse recovery time trr = 50 ns and recovered charge Qr = 85 nC - suitable for inductive load commutation in automotive body electronics and chassis control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - supports 24 V automotive systems with margin against load-dump transients. |
| ID (continuous) | 46 A at Tmb = 25 °C - enables high-current switching of starter relays, HVAC blowers, and fuel pumps. |
| RDS(on) | 20–24 mΩ at VGS = 5 V, ID = 25 A, Tj = 25 °C - minimizes conduction loss and heatsink requirements. |
| Tj max | 175 °C - qualified for under-hood applications with extended thermal operating range. |
| Rth(j-mb) | 1.4 K/W - enables efficient heat transfer to external heatsink via mounting base (drain-connected). |
| EDS(AL)S | 76 mJ unclamped avalanche energy - provides ruggedness against inductive kickback in motor/solenoid drives. |
| VGS(th) | 1.0–2.0 V typical - ensures reliable turn-on with standard 3.3 V/5 V logic outputs. |
| Ciss | 1361–1815 pF - balances switching speed and gate drive strength for 100 ns-class rise/fall times. |
Pinout & Package
Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base connected to drain terminal; 3-lead configuration with standardized lead pitch and mechanical dimensions per JEDEC SC-46.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; accepts logic-level drive (VGS = 4.5–10 V); requires <100 nA leakage current handling. |
| 2 (D) | Drain | Main power output node; electrically tied to mounting base for thermal and electrical connection to heatsink. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configurations. |
| Mounting base (mb) | Drain extension | Thermally and electrically connected to drain pin; must be isolated from chassis unless drain is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, braking, and lighting systems. |
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V - compatible with MCU GPIOs without external level shifters. |
| Low RDS(on) at 5 V | 20–24 mΩ at VGS = 5 V - reduces I²R losses by >30% vs. standard MOSFETs requiring 10 V gate drive. |
| 175 °C junction rating | Enables operation in high-ambient zones (e.g., near exhaust, transmission, or battery compartments). |
| Drain-connected mounting base | Provides lowest possible thermal resistance path (1.4 K/W) to external heatsink for sustained high-power duty. |
| Unclamped avalanche ruggedness | 76 mJ energy rating - withstands repetitive inductive switching events without degradation in motor control. |
Applications
| Automotive Body Control Module | 12 V/24 V DC Motor Drive |
|---|---|
|
Use Scenario: Switching door locks, seat adjusters, and sunroof actuators in modern vehicle platforms. IC Role / Device Role / Timing Role: Low-side power switch controlling brushed DC motor direction and stall current. Use Value: Logic-level gate drive eliminates need for driver ICs; 175 °C rating ensures reliability in cabin-adjacent enclosures. |
Use Scenario: Driving radiator cooling fans, HVAC blower motors, and power steering assist pumps. IC Role / Device Role / Timing Role: High-current, thermally robust power switch with integrated avalanche protection. Use Value: 46 A continuous current and 76 mJ avalanche energy enable direct replacement of relay-based solutions. |
| LED Headlamp Power Stage | Industrial Solenoid Control |
|
Use Scenario: PWM dimming and on/off control of high-brightness LED arrays in adaptive front lighting systems. IC Role / Device Role / Timing Role: Fast-switching, low-loss power stage supporting >1 kHz PWM frequencies. Use Value: Ciss = 1361–1815 pF and tr/tf ≤ 104/80 ns enable efficient thermal management during dynamic operation. |
Use Scenario: Controlling hydraulic valves, pneumatic actuators, and fuel injectors in off-road and commercial vehicles. IC Role / Device Role / Timing Role: Rugged, high-reliability switch for inductive loads with high dI/dt stress. Use Value: VGS(th) stability over -55 to +175 °C ensures consistent turn-on behavior across extreme ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF5 | 55 V, 220 A peak, RDS(on) = 2.2 mΩ @ 10 V - lower on-resistance but requires 10 V gate drive; not logic-level. | Requires gate driver IC for 3.3 V/5 V MCU interface; better suited for high-efficiency, non-logic-level designs. | Select only if gate drive voltage ≥ 8 V is available and lower conduction loss outweighs added complexity. |
| IRF3205PBF | 55 V, 110 A, RDS(on) = 8.0 mΩ @ 10 V - higher current rating but VGS(th) = 2.0–4.0 V; marginal logic-level compatibility. | Limited 5 V drive margin; may exhibit inconsistent turn-on at low temperatures or aging conditions. | Use only with verified 5 V gate drive headroom and thermal derating; not recommended for AEC-Q101-critical systems. |
Compared with STL220N5LF5 and IRF3205PBF, the BUK9524-55A delivers guaranteed logic-level operation (VGS(th) ≤ 2.0 V), AEC-Q101 qualification, and optimized thermal design for automotive mounting - making it the preferred choice where MCU-native drive, qualification compliance, and thermal integration are mandatory.
Availability
BUK9524-55A is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V motor control, and industrial solenoid actuation requiring stable component supply across production lifecycles.
Supply support for BUK9524-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The BUK9524-55A belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for automotive-grade power switching where reliability, thermal performance, and direct MCU interfacing are critical.
FAQ
What is the maximum continuous drain current for BUK9524-55A at 100 °C mounting base temperature?
The BUK9524-55A supports 33 A continuous drain current at Tmb = 100 °C and VGS = 5 V, as specified in Table 4 (Limiting values). This derating reflects thermal constraints at elevated ambient conditions and must be applied in under-hood designs where heatsink temperature exceeds 25 °C.
Is BUK9524-55A suitable for use in a high-side switch configuration?
No - the BUK9524-55A is optimized for low-side switching due to its drain-connected mounting base and standard TO-220AB pinout. High-side implementation would require isolation of the heatsink and additional level-shifting circuitry, which is not supported by the device's architecture or qualification scope.
Does BUK9524-55A have built-in ESD protection on the gate terminal?
The BUK9524-55A datasheet does not specify integrated gate ESD protection diodes. Gate leakage current is rated at ≤100 nA at ±10 V, and absolute maximum VGS is ±10 V - indicating reliance on external gate resistors and layout best practices for ESD robustness in automotive assembly environments.
What is the typical gate charge (QG) of BUK9524-55A at VDD = 14 V?
Figure 10 shows typical gate charge of ~30 nC at VDD = 14 V and VGS = 5 V. While exact QG is not tabulated, this value supports calculation of gate drive power and switching loss in PWM applications using the BUK9524-55A.
Can BUK9524-55A replace BUK9524-55B in existing designs?
No - BUK9524-55B is a distinct variant with different RDS(on) specifications and thermal characteristics. The BUK9524-55A datasheet explicitly separates from earlier combined documents (BUK9524_9624_55A v.1), confirming no cross-qualification or interchangeability between suffix variants.
BUK9524-55A,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1815 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 105W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK9524-55A,127 FAQ
1.How can I place an order for BUK9524-55A,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9524-55A,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK9524-55A,127 is sourced from the original manufacturer or authorized distributors?
All BUK9524-55A,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9524-55A,127 meets industry standards.
7.What is the process for return or replacement of BUK9524-55A,127?
All BUK9524-55A,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9524-55A,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9524-55A,127 part is unused and in its original packaging.
Return procedure for BUK9524-55A,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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