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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9529-100B,127

Name: BUK9529-100B,127
Brand: Nexperia USA Inc.
SKU: BUK9529-100B,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9529-100B,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK9529-100B,127.pdf

Description:: MOSFET N-CH 100V 46A TO220AB

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Product details

Overview

BUK9529-100B,127 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 100 V drain-source voltage, 46 A continuous drain current at 25 °C mounting base temperature, and 157 W total power dissipation. It delivers 22–27 mΩ R_DS(on) at V_GS = 10 V and ID = 25 A, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for automotive critical loads including motors, lamps, and solenoids.

For engineers reviewing the BUK9529-100B,127 datasheet, BUK9529-100B,127 pinout, BUK9529-100B,127 application, or BUK9529-100B,127 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.1–2.0 V), thermal robustness (R_th(j-mb) = 0.95 K/W), avalanche energy rating (152 mJ), and automotive qualification status.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive capability-enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry. Its gate threshold voltage (1.1–2.0 V at 25 °C) and sub-threshold conduction behavior are tightly controlled across -55 °C to 175 °C operating range.

The integrated source-drain diode supports freewheeling in inductive switching applications, with 0.85–1.2 V forward voltage at 25 A and 114 ns reverse recovery time. Dynamic parameters-including 33 nC total gate charge, 13 nC Q_GD, and 3270–4360 pF C_iss-are specified at V_DS = 80 V and T_j = 25 °C for PWM-driven load control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 12 V, 24 V, and 42 V automotive battery systems with margin against load-dump transients.
I_D (continuous)	46 A at T_mb = 25 °C - enables high-current switching of motors and solenoids without external heatsink under moderate ambient conditions.
R_DS(on)	22–27 mΩ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - minimizes conduction loss (≤1.7 W at 25 A) and thermal stress in power paths.
T_j max	175 °C - allows operation in engine bay or under-hood environments where ambient temperatures exceed 105 °C.
Avalanche Energy E_AS	152 mJ (unclamped) - provides single-pulse ruggedness against inductive kickback in relay or motor drive circuits.
R_th(j-mb)	0.95 K/W - enables efficient heat transfer to external heatsink, supporting >100 W sustained power dissipation with proper thermal design.
V_GS(th)	1.1–2.0 V at I_D = 1 mA - ensures reliable turn-on with standard logic-level MCU outputs and reduces risk of partial conduction.

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base electrically connected to the drain terminal. Features three leads and one mounting hole for mechanical and thermal attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input for MOSFET channel; requires ≤15 V drive; gate leakage <100 nA at ±15 V ensures low standby current.
2 (D)	Drain	Main high-side power path; electrically tied to mounting base-requires isolation from heatsink unless referenced to system ground.
3 (S)	Source	Power return node; forms reference for gate drive; internal source inductance 7.5 nH affects high-speed switching stability.
Mounting Base (mb)	Drain connection	Integral thermal and electrical path to drain; must be insulated if heatsink is grounded; contributes to low R_th(j-mb).

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
Logic-level gate drive	Turns fully on with 5 V gate-source voltage-eliminates need for gate driver ICs in 5 V MCU-based designs.
175 °C junction rating	Enables deployment in thermally aggressive locations (e.g., near exhaust manifolds or alternators) without derating.
Low R_DS(on) at 5 V drive	24–29 mΩ at V_GS = 5 V, I_D = 25 A, T_j = 25 °C-reduces conduction loss by ~30% vs. standard MOSFETs at same gate voltage.
Unclamped avalanche ruggedness	152 mJ energy handling-protects against inductive energy release during switch-off without external snubbers in many cases.

Applications

Automotive Engine Control

Body Electronics Load Switching

Use Scenario: Driving fuel injectors or ignition coils in 12 V/24 V engine management systems.

IC Role / Device Role / Timing Role: High-side power switch controlling inductive loads with precise PWM timing and fast fall time (46 ns).

Use Value: Low Q_GD (13 nC) and fast switching reduce energy loss during transitions, improving fuel efficiency and reducing EMI.

Use Scenario: Controlling headlights, HVAC blowers, or seat adjustment motors in passenger compartment modules.

IC Role / Device Role / Timing Role: Logic-compatible load switch interfacing directly with 5 V microcontroller GPIO pins.

Use Value: V_GS(th) ≤2.0 V and R_DS(on) ≤29 mΩ at 5 V ensure full enhancement and minimal voltage drop across the switch.

Industrial Motor Drives

42 V Mild Hybrid Systems

Use Scenario: Powering 24 V DC brush motors in factory automation actuators or conveyor controls.

IC Role / Device Role / Timing Role: Robust power stage handling repetitive surge currents up to 186 A (10 µs pulses).

Use Value: Peak drain current rating and 175 °C operation allow sustained duty cycles in enclosed enclosures without forced cooling.

Use Scenario: Managing auxiliary loads (e.g., power steering, braking assist) in 42 V stop-start or mild hybrid architectures.

IC Role / Device Role / Timing Role: High-voltage tolerant switch supporting battery transients up to 100 V with AEC-Q101 reliability.

Use Value: 100 V V_DS rating and avalanche ruggedness provide margin against load-dump events common in 42 V systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 8.5 mΩ @ 10 V; TO-220FP package; no AEC-Q101 qualification.	Higher current capacity but lacks automotive qualification and has higher gate charge (65 nC).	Select when higher peak current and lower R_DS(on) are prioritized over automotive compliance and logic-level drive.
IRF3205PBF	55 V, 110 A, R_DS(on) = 8.0 mΩ @ 10 V; TO-220AB; not AEC-Q101 qualified; V_GS(th) = 2–4 V.	Lower voltage rating limits use to 12 V/24 V only; higher V_GS(th) risks incomplete turn-on with 3.3 V MCUs.	Choose for cost-sensitive non-automotive 12 V industrial switching where gate drive voltage ≥5 V is guaranteed.

Compared with STP110N10F7 and IRF3205PBF, BUK9529-100B,127 trades some current capacity for guaranteed logic-level operation, automotive qualification, and superior thermal performance (0.95 K/W vs. ~1.5 K/W typical for alternatives), making it optimal for space-constrained, safety-critical automotive power stages.

Availability

BUK9529-100B,127 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9529-100B,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

BUK9529-100B,127 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for automotive-grade power switching where reliability, thermal resilience, and direct MCU interface are mandatory.

FAQ

Is BUK9529-100B,127 suitable for 3.3 V microcontroller gate drive?

Yes-its gate threshold voltage ranges from 1.1 V to 2.0 V at 25 °C, and it achieves 24–29 mΩ R_DS(on) at V_GS = 5 V and 25 A. While 3.3 V is below nominal turn-on voltage, test data shows usable conduction at 3.3 V in low-current applications; however, full 46 A rating requires ≥4.5 V gate drive per datasheet Figure 11.

What is the thermal resistance from junction to mounting base, and how does it impact heatsink design?

R_th(j-mb) is 0.95 K/W, measured from silicon junction to the TO-220AB mounting base. This value enables efficient heat transfer to an external heatsink-e.g., a 10 K/W heatsink yields total R_th(j-a) ≈ 10.95 K/W, supporting ~14 W continuous dissipation at ΔT = 150 K. Mounting base insulation must be rated for 100 V isolation if heatsink is grounded.

Does BUK9529-100B,127 include integrated protection features like overtemperature shutdown?

No-it is a discrete power MOSFET without built-in thermal shutdown, current limiting, or fault reporting. Protection must be implemented externally via gate driver ICs, current-sense resistors, or microcontroller-based monitoring. Its 175 °C T_j max and avalanche rating provide inherent ruggedness but not active protection.

Can BUK9529-100B,127 replace older NXP BUK95xx devices in existing designs?

Yes-BUK9529-100B,127 shares identical TO-220AB (SOT78A) footprint, pinout, and thermal characteristics with other BUK95xx series parts. Electrical differences include tighter R_DS(on) tolerance and updated AEC-Q101 test coverage; no PCB or driver circuit changes are required for drop-in replacement in qualified automotive designs.

BUK9529-100B,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 157W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK9529-100B,127 FAQ

1.How can I place an order for BUK9529-100B,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9529-100B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9529-100B,127 reliable?

The price and inventory of BUK9529-100B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9529-100B,127 is usually 5 days.

3.What payment methods are accepted for BUK9529-100B,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9529-100B,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9529-100B,127?

BUK9529-100B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9529-100B,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9529-100B,127?

For technical support, including BUK9529-100B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9529-100B,127 requirements.

6.How does Aetrix verify that BUK9529-100B,127 is sourced from the original manufacturer or authorized distributors?

All BUK9529-100B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9529-100B,127 meets industry standards.

7.What is the process for return or replacement of BUK9529-100B,127?

All BUK9529-100B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9529-100B,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9529-100B,127 part is unused and in its original packaging.

Return procedure for BUK9529-100B,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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