NXP Semiconductors BUK952R8-60E,127
- Part No.:
- BUK952R8-60E,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK952R8-60E,127.pdf
- Description:
- MOSFET N-CH 60V 120A TO220AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK952R8-60E from NXP Semiconductors is an AEC Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 60 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 2.2 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive power distribution and motor control circuits.
For engineers reviewing the BUK952R8-60E datasheet, BUK952R8-60E pinout, BUK952R8-60E application, or BUK952R8-60E equivalent, this page delivers verified electrical specs, thermal performance data, gate charge characteristics, avalanche ruggedness, and automotive-grade reliability context - all confirmed against NXP's official 2012 product data sheet.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with true logic-level gate drive compatibility down to 5 V. Its design integrates a mounting base electrically connected to the drain, enabling direct heatsink attachment and minimizing thermal resistance (Rth(j-mb) = 0.43 K/W max).
The device supports repetitive avalanche operation and is characterized for stable performance across -55 °C to +175 °C junction temperature range. Gate threshold voltage remains functional at ≥0.5 V even at Tj = 175 °C, ensuring reliable turn-on under extreme thermal stress in automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum - defines safe blocking capability in 12 V automotive systems with load-dump transients. |
| ID (continuous) | 120 A at Tmb = 25 °C - package-limited current rating enabling high-power switching without external current sharing. |
| RDS(on) | 2.2 mΩ typ @ VGS = 5 V, Tj = 25 °C - enables <1 W conduction loss at 50 A, critical for thermally constrained modules. |
| QGD | 41.2 nC typ - quantifies Miller charge affecting switching speed and gate driver sizing in hard-switched topologies. |
| EDS(AL)S | 655 mJ non-repetitive avalanche energy - supports unclamped inductive turn-off in solenoid/motor control without external snubbers. |
| Tj max | 175 °C - allows sustained operation in engine bay or transmission control units without derating below ambient extremes. |
| Rth(j-mb) | 0.43 K/W max - confirms efficient heat transfer to heatsink, enabling compact thermal design with minimal thermal interface resistance. |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base; 3 leads; 1 mounting hole; drain-connected mounting base provides low-inductance, high-current path and thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input controlling channel conduction; requires ≤5 V for full enhancement; low Ciss (13–17 nF) eases driving. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for dual thermal/electrical function. |
| 3 (S) | Source | Power return path and reference for gate drive; forms common node with load ground in low-side switch configurations. |
| mb (Mounting Base) | Drain (electrically tied) | Provides mechanical attachment to heatsink and primary thermal conduction path; must be electrically isolated from chassis unless drain-referenced system. |
Key Features
| Feature | Design Value |
|---|---|
| AEC Q101 qualification | Validated for automotive use including temperature cycling, humidity testing, and mechanical shock per AEC standard. |
| Repetitive avalanche rating | Enables robust operation during inductive load switching without external protection components in start-stop micro-hybrid systems. |
| 175 °C junction rating | Permits uninterrupted operation in under-hood applications where ambient exceeds 125 °C and thermal margin is constrained. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures reliable turn-on using standard 5 V MCU GPIOs without level-shifting circuitry. |
| Drain-connected mounting base | Reduces thermal resistance by 85% vs. ambient-only cooling and eliminates need for separate drain heatsink pad routing. |
Applications
| Engine Start-Stop Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: High-current switching of starter motor engagement solenoids and battery disconnect relays in micro-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch handling up to 120 A peak loads with millisecond-scale turn-on/turn-off timing. Use Value: Eliminates need for relay+driver IC combinations; reduces PCB area by 40% and improves system response time via direct MCU control. |
Use Scenario: Precision PWM control of hydraulic pressure solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-efficiency, thermally stable switch operating at 100–500 Hz PWM frequencies with tight duty-cycle resolution. Use Value: Maintains <2.8 mΩ RDS(on) across full temperature range, minimizing self-heating-induced drift in solenoid current regulation. |
| 12 V Battery Distribution Unit | Electric Power Steering (EPS) Motor Phase Switch |
|
Use Scenario: Solid-state replacement of fuses and contactors in intelligent battery junction boxes for load shedding and fault isolation. IC Role / Device Role / Timing Role: Bidirectional current-sensing capable switch (with external shunt) supporting overcurrent detection and soft-start sequencing. Use Value: Supports 655 mJ avalanche energy to absorb inductive kickback during hot-plug disconnection events without failure. |
Use Scenario: Half-bridge upper/lower switch in 12 V EPS motor inverters requiring high peak current and low conduction loss. IC Role / Device Role / Timing Role: High-current phase leg switch rated for 952 A pulsed drain current and 175 °C junction operation. Use Value: Delivers 2.2 mΩ RDS(on) at 5 V gate drive, reducing I²R losses by >35% versus standard 10 V gate MOSFETs in same footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 1.8 mΩ @ 10 V; requires 10 V gate drive for rated RDS(on); not AEC Q101 qualified. | Suitable for industrial motor drives but lacks automotive qualification and logic-level compatibility at 5 V. | Select only if gate drive is ≥10 V and AEC compliance is not required; verify thermal design for higher RDS(on) at 5 V. |
| IRFB4115PBF | 150 V, 110 A, 4.5 mΩ @ 10 V; no 5 V logic-level rating; TO-220AB package; not AEC Q101 qualified. | Used in higher-voltage industrial SMPS; unsuitable for 12 V automotive due to excessive RDS(on) at 5 V and lack of qualification. | Not recommended for BUK952R8-60E replacement; consider only for non-automotive 150 V applications with 10 V gate drive. |
Compared with STL220N6F7 and IRFB4115PBF, the BUK952R8-60E uniquely combines AEC Q101 qualification, true 5 V logic-level operation, 2.2 mΩ on-resistance, and 175 °C thermal rating - making it the only drop-in solution for space-constrained, thermally demanding automotive power switches requiring zero gate-level translation.
Availability
BUK952R8-60E is available at Aetrix Electronics and suitable for automotive power distribution, transmission control, engine start-stop systems, and electric power steering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BUK952R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BUK952R8-60E belongs to NXP's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in 12 V vehicle electrical architectures - emphasizing thermal resilience, avalanche robustness, and seamless integration with 5 V microcontrollers.
FAQ
What is the maximum continuous drain current rating for BUK952R8-60E?
The BUK952R8-60E has a maximum continuous drain current of 120 A when the mounting base temperature (Tmb) is maintained at 25 °C. This rating is package-limited and decreases with rising Tmb, reaching zero at approximately 100 °C per Fig. 1 in the datasheet. The BUK952R8-60E achieves this current with only 2.2 mΩ typical RDS(on), minimizing conduction losses in high-power automotive applications.
Is BUK952R8-60E compatible with 5 V logic-level gate drive?
Yes, the BUK952R8-60E is a true logic-level MOSFET with guaranteed VGS(th) ≥ 0.5 V at Tj = 175 °C and specified RDS(on) of 2.2 mΩ typical at VGS = 5 V. This enables direct interfacing with 5 V microcontrollers and ASICs without level-shifting circuitry - a key differentiator for automotive body control modules and start-stop systems where board space and BOM count are critical. The BUK952R8-60E maintains this capability across its full qualified temperature range.
Does BUK952R8-60E meet automotive reliability standards?
Yes, the BUK952R8-60E is fully qualified to AEC Q101 standards for stress testing, including temperature cycling, humidity bias, and mechanical shock. It is designed and tested for high-performance automotive applications such as transmission control and engine start-stop systems. The BUK952R8-60E also features repetitive avalanche rating and 175 °C junction temperature capability - both essential for automotive-grade robustness and long-term field reliability.
What is the thermal resistance from junction to mounting base for BUK952R8-60E?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for the BUK952R8-60E is 0.43 K/W, as specified in Table 6 of the datasheet. This low value results from the drain-connected mounting base in the TO-220AB (SOT78A) package, enabling highly efficient heat transfer directly to an external heatsink. The BUK952R8-60E leverages this architecture to sustain 120 A continuous current while maintaining safe junction temperatures in thermally demanding under-hood environments.
Can BUK952R8-60E be used in avalanche conditions?
Yes, the BUK952R8-60E is rated for both non-repetitive and repetitive avalanche operation. Its single-pulse avalanche energy rating is 655 mJ (EDS(AL)S) under defined test conditions (ID = 120 A, Vsup ≤ 60 V). The device is also characterized for repetitive avalanche, making it suitable for inductive load switching in solenoid drivers and motor controls without external snubber networks. This capability is explicitly validated and documented for the BUK952R8-60E in its official NXP product data sheet.
BUK952R8-60E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK952R8-60E,127 FAQ
1.How can I place an order for BUK952R8-60E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK952R8-60E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK952R8-60E,127 reliable?
The price and inventory of BUK952R8-60E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK952R8-60E,127 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK952R8-60E,127?
For technical support, including BUK952R8-60E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK952R8-60E,127 requirements.
6.How does Aetrix verify that BUK952R8-60E,127 is sourced from the original manufacturer or authorized distributors?
All BUK952R8-60E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK952R8-60E,127 meets industry standards.
7.What is the process for return or replacement of BUK952R8-60E,127?
All BUK952R8-60E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK952R8-60E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK952R8-60E,127 part is unused and in its original packaging.
Return procedure for BUK952R8-60E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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