NXP Semiconductors BUK9535-55,127

Overview

BUK9535-55 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode logic-level TrenchMOS™ power transistor in TO220AB package, rated for 55 V drain-source voltage, 34 A DC drain current at 25 °C, and 35 mΩ R_DS(ON) at V_GS = 5 V. It integrates ESD protection up to 2 kV and is designed for automotive load switching and industrial DC power control.

For engineers reviewing the BUK9535-55 datasheet, BUK9535-55 pinout, BUK9535-55 application, or BUK9535-55 equivalent, key selection criteria include its logic-level gate drive compatibility with 5 V microcontrollers, low on-resistance at low gate voltage, thermal resistance of 1.75 K/W junction-to-mounting-base, and avalanche energy rating of 45 mJ under unclamped inductive turn-off conditions.

Technical Context

This device uses trench-gate MOSFET technology to achieve low R_DS(ON) while maintaining robust switching performance. Its gate threshold voltage ranges from 1.0 V to 2.0 V at 25 °C and remains functional down to 0.5 V at 175 °C, enabling reliable turn-on with standard logic-level drivers.

It features integral body diode with 0.95–1.2 V forward voltage at 25 A, reverse recovery time ≤40 ns, and 136 A pulse drain current capability. Thermal design is supported by a maximum junction temperature of 175 °C and normalized derating curves for power and current versus mounting base temperature.

Key Specifications

Pinout & Package

Package: TO220AB (SOT78), plastic envelope with metal tab electrically connected to drain; net mass 2 g; UL94 V0 compliant epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with STP36NF55 and IRFZ44N, the BUK9535-55 uniquely delivers verified logic-level operation at 5 V, factory-tested 2 kV ESD immunity, and guaranteed 45 mJ avalanche energy - making it the preferred choice for automotive-grade and safety-critical industrial switching where gate drive simplicity and transient robustness are mandatory.

Availability

BUK9535-55 is available at Aetrix Electronics and suitable for automotive body control, industrial motor starter, and DC power distribution applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9535-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT markets, with roots in Philips' semiconductor division.

The BUK9535-55 belongs to NXP's TrenchMOS™ logic-level power transistor family, engineered specifically for robust, low-voltage gate-driven switching in harsh environments such as automotive under-hood and industrial control cabinets.

FAQ

What is the maximum gate-source voltage rating for the BUK9535-55?

The BUK9535-55 has a maximum gate-source voltage rating of ±10 V, per the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–5 V for logic-level control or 0–10 V if using higher-voltage drivers, always respecting the ±10 V limit. The BUK9535-55 gate threshold voltage is specified between 1.0 V and 2.0 V at 25 °C, confirming its suitability for 5 V logic interfaces.

Can the BUK9535-55 be used in high-temperature environments like automotive engine compartments?

Yes, the BUK9535-55 supports continuous operation up to 175 °C junction temperature and includes derating curves for current and power versus mounting base temperature. Its R_DS(ON) increases only 2.1× from 25 °C to 175 °C (per Fig.9), and gate threshold remains functional down to 0.5 V at 175 °C. When mounted on a properly sized heatsink with thermal interface material, the BUK9535-55 meets AEC-Q101 stress test requirements for under-hood use. The BUK9535-55 is widely deployed in automotive body control modules for this reason.

Does the BUK9535-55 have an integrated body diode, and what are its characteristics?

Yes, the BUK9535-55 includes an intrinsic body diode with forward voltage of 0.95–1.2 V at 25 A and reverse recovery time ≤40 ns. Its reverse recovery charge is 0.16 µC max, supporting efficient freewheeling in inductive loads like solenoids and relay coils. The diode is rated for 34 A continuous reverse current and 136 A pulsed current, matching the MOSFET's drain ratings. These parameters are measured with V_GS = 0 V and are fully specified in the Reverse Diode Characteristics section of the BUK9535-55 datasheet.

Is the metal tab on the BUK9535-55 electrically isolated or connected to a specific terminal?

The metal tab on the BUK9535-55 is electrically connected to the drain terminal (Pin 2), as confirmed in both the Pin Configuration diagram and Mechanical Data section. This configuration requires electrical isolation from the heatsink unless the drain node is at chassis ground potential. Insulating pads or shoulder washers must be used when mounting to a common heatsink shared with other devices. The tab serves dual roles: primary thermal path (R_{th j-mb} = 1.75 K/W) and high-current drain conduction path in the BUK9535-55.

How does the BUK9535-55 handle unclamped inductive switching events?

The BUK9535-55 is rated for 45 mJ of non-repetitive unclamped inductive turn-off energy (W_DSS) under defined test conditions: I_D = 20 A, V_DD ≤ 25 V, V_GS = 5 V, R_GS = 50 Ω, and T_mb = 25 °C. This avalanche capability allows safe operation during inductive load turn-off without external snubbers in many automotive and industrial applications. The BUK9535-55 datasheet provides a normalized avalanche energy curve (Fig.15) showing derating to ~30 mJ at 100 °C mounting base temperature.