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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK953R2-40E,127

Name: BUK953R2-40E,127
Brand: NXP Semiconductors
SKU: BUK953R2-40E,127
Price: 2.40 USD
Availability: InStock
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Part No.:: BUK953R2-40E,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK953R2-40E,127.pdf

Description:: MOSFET N-CH 40V 100A TO220AB

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Product details

Overview

BUK953R2-40E from NXP Semiconductors is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 40 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 234 W total power dissipation. It delivers 2.7–3.2 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, enabling high-efficiency switching in automotive 12 V systems.

For engineers reviewing the BUK953R2-40E datasheet, BUK953R2-40E pinout, BUK953R2-40E application, or BUK953R2-40E equivalent, this page provides verified technical context, validated pin mapping, confirmed thermal and dynamic parameters, and real-world automotive use cases - all aligned to the official NXP product data sheet dated 11 September 2012.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility - V_GS(th) remains ≥ 0.5 V even at T_j = 175 °C, ensuring reliable turn-on under extreme thermal stress. Its repetitive avalanche rating and 175 °C maximum junction temperature support robust operation in thermally demanding environments such as start-stop micro-hybrid control modules.

The device integrates a source-drain diode with 0.8–1.2 V forward voltage at I_S = 25 A and T_j = 25 °C, and features low internal inductances (L_D = 2.5 nH, L_S = 7.5 nH), supporting fast switching with reduced voltage overshoot in high-di/dt applications like solenoid and transmission control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V automotive battery systems with load-dump transients.
R_DS(on)	2.7–3.2 mΩ @ V_GS = 5 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for thermal management in compact motor drivers.
I_D (continuous)	100 A @ T_mb = 25 °C - Limited by TO-220AB package thermal capacity; derates to zero at T_mb ≈ 200 °C per Fig. 1.
Q_GD	25.8 nC - Gate-drain charge directly impacts switching loss and Miller plateau duration during hard-switching transitions.
R_th(j-mb)	0.64 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink mounting for high-power dissipation without PCB copper area dependency.
E_DS(AL)S	419 mJ - Non-repetitive avalanche energy rating supports single-pulse fault tolerance up to 100 A with unclamped inductive loads.
V_GS(th)	0.5 V min @ T_j = 175 °C - Ensures guaranteed turn-on with standard 3.3 V or 5 V MCU GPIOs across full automotive temperature range.

Pinout & Package

Package: TO-220AB (SOT78A) - plastic single-ended package with heatsink-mounted mounting base (pin 2/mb), 1 mounting hole, and 3 leads. Mounting base is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level control input; requires ≤5 V for full enhancement; low Q_G(tot) = 69.5 nC enables fast switching with modest gate driver capability.
2 (D) / mb	Drain & Mounting Base	Main high-side power terminal; electrically tied to heatsink; carries full load current and dissipates heat directly to external thermal mass.
3 (S)	Source	Power return path and reference for gate drive; internal source inductance (L_S = 7.5 nH) affects switching waveform integrity in high-frequency PWM.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock - required for engine bay and transmission control modules.
Repetitive avalanche rating	Supports repeated inductive turn-off events without degradation, essential for solenoid and motor phase-leg protection in harsh automotive environments.
175 °C maximum junction temperature	Enables operation in under-hood locations where ambient temperatures exceed 125 °C, eliminating need for derating or forced cooling in many applications.
True logic-level gate	V_GS(th) ≥ 0.5 V at 175 °C ensures consistent turn-on with standard microcontroller outputs, avoiding gate driver ICs in cost-sensitive designs.
Low R_DS(on) × Q_GD figure of merit	~83 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V power switching in start-stop and lamp control systems.

Applications

Start-Stop Micro-Hybrid Control	Transmission Solenoid Driver
Use Scenario: High-current switching of starter motor engagement/disengagement during engine restart cycles in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; must sustain 100 A pulses with <10 µs turn-off to prevent back-EMF damage. Use Value: 419 mJ avalanche energy rating and 781 A peak drain current (I_DM) enable safe interruption of inductive starter coil current without snubber circuits.	Use Scenario: Precision PWM control of hydraulic solenoids in automatic transmission valve bodies, requiring rapid, repeatable actuation. IC Role / Device Role / Timing Role: Low-side switch driving solenoid coils; operates at 100–500 Hz with tight duty-cycle control to regulate fluid pressure. Use Value: 2.7 mΩ R_DS(on) minimizes self-heating during sustained 20–30 A coil currents, while 25.8 nC Q_GD supports clean 100 ns-scale edge transitions.
12 V Automotive Lamp Control	Engine Cooling Fan Driver
Use Scenario: On/off and PWM dimming of high-intensity headlamps, fog lamps, and daytime running lights in modern vehicle lighting systems. IC Role / Device Role / Timing Role: High-side or low-side power switch interfacing between MCU and lamp load; handles inrush currents up to 10× nominal. Use Value: 175 °C T_j rating and 0.64 K/W R_th(j-mb) allow direct heatsink mounting behind lamp housings with minimal thermal margin loss over lifetime.	Use Scenario: Variable-speed control of brushless DC cooling fans mounted near hot engine blocks, subject to wide ambient temperature swings. IC Role / Device Role / Timing Role: Power stage switch in fan motor driver H-bridge; conducts continuous 15–40 A with bidirectional current capability via integrated body diode. Use Value: Source-drain diode V_SD = 0.8–1.2 V at 25 A enables efficient freewheeling during PWM off-time, reducing heat generation versus external diodes.

Start-Stop Micro-Hybrid Control

Transmission Solenoid Driver

Use Scenario: High-current switching of starter motor engagement/disengagement during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; must sustain 100 A pulses with <10 µs turn-off to prevent back-EMF damage.

Use Value: 419 mJ avalanche energy rating and 781 A peak drain current (I_DM) enable safe interruption of inductive starter coil current without snubber circuits.

Use Scenario: Precision PWM control of hydraulic solenoids in automatic transmission valve bodies, requiring rapid, repeatable actuation.

IC Role / Device Role / Timing Role: Low-side switch driving solenoid coils; operates at 100–500 Hz with tight duty-cycle control to regulate fluid pressure.

Use Value: 2.7 mΩ R_DS(on) minimizes self-heating during sustained 20–30 A coil currents, while 25.8 nC Q_GD supports clean 100 ns-scale edge transitions.

12 V Automotive Lamp Control

Engine Cooling Fan Driver

Use Scenario: On/off and PWM dimming of high-intensity headlamps, fog lamps, and daytime running lights in modern vehicle lighting systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch interfacing between MCU and lamp load; handles inrush currents up to 10× nominal.

Use Value: 175 °C T_j rating and 0.64 K/W R_th(j-mb) allow direct heatsink mounting behind lamp housings with minimal thermal margin loss over lifetime.

Use Scenario: Variable-speed control of brushless DC cooling fans mounted near hot engine blocks, subject to wide ambient temperature swings.

IC Role / Device Role / Timing Role: Power stage switch in fan motor driver H-bridge; conducts continuous 15–40 A with bidirectional current capability via integrated body diode.

Use Value: Source-drain diode V_SD = 0.8–1.2 V at 25 A enables efficient freewheeling during PWM off-time, reducing heat generation versus external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.7 mΩ @ 10 V; DFN5x6 package; no AEC-Q101 certification listed in public datasheet.	Higher current capability but surface-mount only; lacks automotive qualification and mounting base for direct heatsinking.	Prefer BUK953R2-40E for through-hole, heatsink-integrated, AEC-Q101-compliant designs where board space and qualification are critical.
IRF1404ZPBF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V; TO-220AB package; not logic-level (V_GS(th) = 2–4 V); no AEC-Q101 rating.	Requires 10 V gate drive; unsuitable for direct 3.3 V/5 V MCU interface; higher R_DS(on) increases conduction loss at same current.	Choose BUK953R2-40E when logic-level compatibility, 175 °C operation, and automotive qualification are mandatory.

Compared with STL220N4F7AG and IRF1404ZPBF, BUK953R2-40E uniquely combines AEC-Q101 qualification, true logic-level gate behavior down to 175 °C, and TO-220AB mounting base integration - making it the only option among the three qualified for under-hood automotive power switching with direct MCU control and passive heatsinking.

Availability

BUK953R2-40E is available at Aetrix Electronics and suitable for automotive power distribution, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK953R2-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

BUK953R2-40E belongs to NXP's TrenchMOS logic-level power MOSFET family, engineered specifically for high-reliability 12 V automotive power switching where AEC-Q101 compliance, thermal robustness, and direct microcontroller interface are essential.

FAQ

What is the maximum continuous drain current rating for BUK953R2-40E?

The BUK953R2-40E supports 100 A continuous drain current at mounting base temperature (T_mb) = 25 °C, as specified in Table 1 and Figure 1 of the NXP datasheet. This rating is package-limited and decreases linearly with rising T_mb, reaching zero at approximately 200 °C. At T_mb = 100 °C, the device still sustains 100 A, confirming its robust thermal design for high-power automotive applications.

Is BUK953R2-40E qualified for automotive use?

Yes, BUK953R2-40E is explicitly designed and qualified to AEC-Q101 standards for high-performance automotive applications, as stated in Section 1.1 of the NXP product data sheet. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock - validating its suitability for under-hood deployment in engine control, transmission, and start-stop systems.

What is the gate threshold voltage of BUK953R2-40E at high temperature?

The BUK953R2-40E guarantees a minimum gate-source threshold voltage (V_GS(th)) of 0.5 V at junction temperature T_j = 175 °C, per Table 7 and Figure 9 in the NXP datasheet. This true logic-level behavior ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs across the full automotive temperature range, distinguishing it from standard MOSFETs that lose gate sensitivity at elevated temperatures.

Does BUK953R2-40E have avalanche capability?

Yes, BUK953R2-40E is repetitively avalanche rated, with a non-repetitive drain-source avalanche energy (E_DS(AL)S) of 419 mJ under specified test conditions (I_D = 100 A, V_sup ≤ 40 V, R_GS = 50 Ω, T_j(init) = 25 °C). This ruggedness supports safe interruption of inductive loads like solenoids and motors without external protection components.

What is the thermal resistance from junction to mounting base for BUK953R2-40E?

The BUK953R2-40E has a maximum thermal resistance from junction to mounting base (R_th(j-mb)) of 0.64 K/W, per Table 6 in the NXP datasheet. This low value reflects the direct thermal path from die to the TO-220AB mounting base, enabling efficient heat transfer to an external heatsink without reliance on PCB copper area - a key advantage in space-constrained automotive modules.

BUK953R2-40E,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 69.5 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 9150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK953R2-40E,127 FAQ

1.How can I place an order for BUK953R2-40E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK953R2-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK953R2-40E,127 reliable?

The price and inventory of BUK953R2-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK953R2-40E,127 is usually 5 days.

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BUK953R2-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK953R2-40E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK953R2-40E,127?

For technical support, including BUK953R2-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK953R2-40E,127 requirements.

6.How does Aetrix verify that BUK953R2-40E,127 is sourced from the original manufacturer or authorized distributors?

All BUK953R2-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK953R2-40E,127 meets industry standards.

7.What is the process for return or replacement of BUK953R2-40E,127?

All BUK953R2-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK953R2-40E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK953R2-40E,127 part is unused and in its original packaging.

Return procedure for BUK953R2-40E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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