Nexperia USA Inc. BUK954R2-55B,127
- Part No.:
- BUK954R2-55B,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK954R2-55B,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,262
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Product details
Overview
BUK954R2-55B from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 3.5 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for automotive 12 V/24 V load switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK954R2-55B datasheet, BUK954R2-55B pinout, BUK954R2-55B application, or BUK954R2-55B equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.1–2.0 V), low RDS(on) at 5 V drive, avalanche ruggedness (1.2 J unclamped), thermal resistance (0.5 K/W j-to-mb), and automotive qualification status.
Technical Context
This device uses NXP's TrenchMOS technology to achieve low on-state resistance with logic-level gate drive capability-enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting. Its mounting base (pin 2) is electrically connected to the drain, requiring isolation when heatsink-mounted.
The FET supports high peak currents (765 A pulsed) and features robust unclamped inductive switching performance (EDS(AL)S = 1.2 J), with dynamic parameters including QGD = 37 nC and Ciss = 7665 pF at VDS = 25 V, supporting fast switching in motor and solenoid control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - defines absolute upper limit for drain-source voltage in automotive 24 V systems with load dump transients. |
| RDS(on) | 3.5 mΩ typ @ VGS = 5 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, critical for thermal management in enclosed modules. |
| ID (cont) | 75 A @ Tmb = 25 °C - package-limited continuous current, scalable down to 75 A at Tmb = 100 °C per Figure 1. |
| Tj max | 175 °C - extended junction rating allows operation in under-hood automotive environments without derating penalties seen in 150 °C parts. |
| Rth(j-mb) | 0.5 K/W - thermal resistance from junction to mounting base confirms efficient heat transfer to external heatsink, enabling high-power switching in compact layouts. |
| QGD | 37 nC - gate-drain charge value directly impacts Miller-induced switching losses and EMI during hard-switching in motor drives. |
| VGS(th) | 1.1–2.0 V @ ID = 1 mA - ensures reliable turn-on with standard logic-level MCU GPIOs, eliminating need for gate drivers in many 12 V applications. |
Pinout & Package
TO-220AB (SOT78) plastic single-ended package with heatsink mounting base; 3 leads; mounting hole centered on drain-connected base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level input (3.3 V/5 V); requires ≤15 V absolute max rating. |
| 2 (D / mb) | Drain / Mounting Base | Main power path output; electrically tied to heatsink mounting surface-requires electrical isolation from chassis ground. |
| 3 (S) | Source | Power return path; referenced to system ground; used for current sensing and gate drive reference. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| Logic-level gate drive | VGS(th) range (1.1–2.0 V) and full enhancement at 5 V enable direct MCU interface-reducing BOM count and PCB area. |
| 175 °C junction rating | Supports sustained operation in high-ambient under-hood locations without thermal shutdown or accelerated aging. |
| Low RDS(on) at 5 V | 3.5 mΩ typical at VGS = 5 V reduces conduction loss by >30% vs. comparable 10 V gate devices driven from same MCU rail. |
| Avalanche ruggedness | 1.2 J unclamped energy rating allows safe operation during inductive load turn-off without external snubbers in solenoid/motor circuits. |
Applications
| Automotive Body Control Module (BCM) | 12 V/24 V Starter Solenoid Driver |
|---|---|
|
Use Scenario: High-side switching of door locks, seat heaters, and lighting loads in modern BCMs with 5 V MCU supervision. IC Role / Device Role: Power switch controlling up to 75 A resistive/inductive loads; gate driven directly from MCU GPIO. Use Value: Eliminates need for discrete level shifters or gate drivers, reducing component count and improving system reliability over temperature. |
Use Scenario: Driving starter solenoid coils in 12 V passenger vehicles, where fast, robust turn-on is required during cranking. IC Role / Device Role: Low-side or high-side power switch handling pulsed 765 A peaks during engagement, with integrated avalanche energy absorption. Use Value: Withstands repeated unclamped inductive kickback without external protection, simplifying layout and enhancing long-term field reliability. |
| Electric Power Steering (EPS) Motor Phase Switch | Commercial Vehicle 24 V Lamp & Horn Control |
|
Use Scenario: Half-bridge phase leg in brushless EPS motor controllers operating in under-hood ambient up to 125 °C. IC Role / Device Role: High-current, high-temperature MOSFET delivering 75 A continuous current with RDS(on) stable up to 175 °C junction. Use Value: Maintains low conduction loss across full automotive temperature range, minimizing thermal runaway risk in sealed motor housings. |
Use Scenario: Centralized power distribution for headlamps, fog lamps, and air horns in heavy-duty trucks with 24 V nominal systems. IC Role / Device Role: Load switch managing multiple 24 V loads simultaneously, leveraging 55 V VDS margin for ISO 7637-2 pulse suppression. Use Value: 55 V rating accommodates 24 V system transients up to ±100 V, ensuring immunity to load dump events without additional clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF5AG | 60 V VDS, 220 A ID, 2.2 mΩ RDS(on) @ 10 V; requires 10 V gate drive for rated RDS(on); no AEC-Q101 listing in public documentation. | Higher current capacity but lacks automotive qualification; suitable for industrial 24 V motor drives where qualification is not mandated. | Select only if gate drive rail ≥10 V is available and AEC-Q101 compliance is not required. |
| ON Semiconductor NTMFS5C670NL | 60 V VDS, 120 A ID, 3.0 mΩ RDS(on) @ 10 V; AEC-Q101 qualified; SO-8FL package (surface-mount, lower thermal mass). | SO-8FL footprint limits power dissipation to ~100 W; unsuitable for 300 W continuous operation without forced cooling. | Prefer for space-constrained PCBs with moderate power needs (<100 W); avoid for TO-220AB-replacement thermal requirements. |
Compared with STL220N5LF5AG and NTMFS5C670NL, the BUK954R2-55B uniquely balances AEC-Q101 compliance, 5 V logic-level drive, 300 W dissipation in TO-220AB, and 175 °C operation-making it the only drop-in solution for thermally demanding, qualified automotive high-side switching where gate voltage is constrained to 5 V.
Availability
BUK954R2-55B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V starter solenoid drivers, and electric power steering motor phase switches requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for BUK954R2-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
This device belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for automotive-grade high-current switching where direct MCU interfacing, thermal resilience, and AEC-Q101 reliability are mandatory.
FAQ
Is BUK954R2-55B suitable for high-side switching configurations?
Yes-it supports high-side switching when used with appropriate gate drive circuitry that provides VGS ≥ 5 V relative to the source. The mounting base (pin 2) is connected to the drain, so electrical isolation between heatsink and system ground is mandatory in high-side implementations to prevent shorting.
What is the maximum allowable gate-source voltage for reliable operation?
The absolute maximum VGS is ±15 V per the datasheet limiting values table. Operation above +15 V or below −15 V risks permanent gate oxide damage. For robust design, gate drive should be clamped to +12 V / −5 V using Zener diodes or dedicated gate driver ICs.
Does BUK954R2-55B include an integrated body diode, and what are its characteristics?
Yes-the device includes a parasitic source-drain diode with VSD = 0.85 V typical at IS = 40 A and Tj = 25 °C, and reverse recovery time trr = 78 ns. This diode supports freewheeling in inductive loads but is not optimized for synchronous rectification due to relatively high forward voltage and recovery charge (Qr = 171 nC).
How does thermal resistance change when mounted on a heatsink versus free-air conditions?
Rth(j-mb) is fixed at 0.5 K/W (junction-to-mounting-base), but total thermal resistance depends on heatsink interface. In free-air, Rth(j-a) is 60 K/W-limiting Ptot to ~4 W. With a 1 K/W heatsink and thermal interface material, total Rth(j-a) drops to ~1.5 K/W, enabling full 300 W dissipation at Tmb = 25 °C per Figure 2.
BUK954R2-55B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK954R2-55B,127 FAQ
1.How can I place an order for BUK954R2-55B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK954R2-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK954R2-55B,127 is sourced from the original manufacturer or authorized distributors?
All BUK954R2-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK954R2-55B,127 meets industry standards.
7.What is the process for return or replacement of BUK954R2-55B,127?
All BUK954R2-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK954R2-55B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK954R2-55B,127 part is unused and in its original packaging.
Return procedure for BUK954R2-55B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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