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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK954R8-60E,127

Name: BUK954R8-60E,127
Brand: Nexperia USA Inc.
SKU: BUK954R8-60E,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK954R8-60E,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUK954R8-60E,127.pdf

Description:: MOSFET N-CH 60V 100A TO220AB

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Product details

Overview

BUK954R8-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 60 V V_DS, 4.9 mΩ R_DS(on) at 5 V_GS/25 A/25 °C, 100 A continuous drain current, and 175 °C junction temperature - deployed in automotive start-stop micro-hybrid systems for high-reliability 12 V power switching.

For engineers reviewing the BUK954R8-60E datasheet, BUK954R8-60E pinout, BUK954R8-60E application, or BUK954R8-60E equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, thermally robust 0.64 K/W R_th(j-mb), and SOT78A mounting-base thermal interface optimized for heatsink-integrated automotive control modules.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility - enabling direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting circuitry. Its gate threshold voltage remains functional up to 175 °C, supporting operation in engine bay environments where ambient temperatures exceed 125 °C.

The device features a monolithic source-drain diode with 39 ns reverse recovery time and 56 nC recovered charge, and is characterized for unclamped single-pulse avalanche energy of 273 mJ - critical for inductive load switching in transmission control and solenoid drivers where voltage transients exceed supply rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V maximum drain-source voltage - supports full 12 V automotive system margin including load-dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on)	4.9 mΩ typical at V_GS = 5 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 100 A, reducing heatsink requirements.
I_D (continuous)	100 A at T_mb = 25 °C - limited by TO-220AB package thermal capacity, not silicon die capability.
R_th(j-mb)	0.64 K/W typical junction-to-mounting-base thermal resistance - allows direct heatsink mounting for stable 175 °C junction operation under sustained load.
V_GS(th)	≥0.5 V at T_j = 175 °C - ensures reliable turn-on with standard logic-level drivers even at maximum operating temperature.
E_AS	273 mJ non-repetitive avalanche energy - sustains unclamped inductive switching events in motor/solenoid control without failure.
Q_GD	20.3 nC gate-drain charge - determines Miller plateau duration and influences switching speed under 5 V gate drive.

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted metal mounting base electrically connected to the drain terminal. The package features three leads and one mounting hole, optimized for mechanical stability and thermal transfer in automotive power modules.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level input controlling channel conduction; requires ≤10 V DC rating and supports direct MCU GPIO drive.
2 (D)	Drain	Main high-side power path; internally bonded to mounting base for low-inductance, low-thermal-resistance connection to heatsink.
3 (S)	Source	Power return node; referenced to ground in low-side switch configurations or used as common reference in H-bridge legs.
Mounting Base (mb)	Drain (electrically tied)	Primary thermal interface and structural anchor - must be insulated from chassis unless drain is at system ground potential.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability across temperature cycling, humidity, and mechanical shock per JESD47 - required for engine control, transmission, and ADAS subsystems.
Repetitive avalanche rating	Rated for repeated inductive switching events without degradation - essential for solenoid and motor control where flyback energy exceeds supply rail clamping limits.
175 °C junction rating	Enables operation in under-hood locations where ambient exceeds 125 °C - eliminates need for derating or forced-air cooling in compact ECU designs.
True logic-level gate	V_GS(th) ≥ 0.5 V at 175 °C ensures turn-on margin with 3.3 V or 5 V controllers even at max temperature - avoids gate driver ICs in space-constrained modules.
Low Q_GD/C_iss ratio	20.3 nC Q_GD with 7.28 nF C_iss supports fast, controllable switching at 5 V drive - reduces shoot-through risk in half-bridge topologies.

Applications

Start-Stop Micro-Hybrid Control

Transmission Solenoid Driver

Use Scenario: Switching high-current starter motor engagement/disengagement during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch managing 80–100 A peak currents with sub-100 µs turn-on/turn-off timing to minimize cranking delay.

Use Value: 273 mJ avalanche energy rating absorbs inductive kickback from starter coil without external snubbers, reducing BOM count and PCB area.

Use Scenario: Driving electro-hydraulic transmission solenoids requiring precise PWM-controlled current up to 5 A with fast response.

IC Role / Device Role / Timing Role: Low-side switch in closed-loop current-regulated driver stage, leveraging tight R_DS(on) tolerance for accurate current sensing.

Use Value: 4.9 mΩ R_DS(on) minimizes self-heating during 100% duty-cycle hold phases, maintaining solenoid force stability over extended gear-shift sequences.

12 V Automotive Lighting

Engine Cooling Fan Control

Use Scenario: High-power LED headlamp matrix switching with thermal management constraints in front-end modules.

IC Role / Device Role / Timing Role: High-side switch delivering up to 15 A per channel with PWM dimming at 1–2 kHz.

Use Value: 0.64 K/W R_th(j-mb) enables direct bolt-down heatsinking to vehicle chassis, eliminating discrete thermal pads and improving long-term lumen maintenance.

Use Scenario: Controlling dual-speed radiator fans in engine bay environments where ambient reaches 105 °C.

IC Role / Device Role / Timing Role: Low-side switch in fan motor driver with integrated freewheeling diode conduction during PWM off-time.

Use Value: Source-drain diode with 39 ns t_rr and 0.8–1.2 V V_SD reduces switching losses and EMI during fan commutation, extending motor brush life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 2.2 mΩ R_DS(on) at 10 V_GS; requires 10 V gate drive for full performance - not logic-level compatible at 5 V.	Better conduction efficiency only when driven by 10 V gate drivers; unsuitable for direct 3.3/5 V MCU interface.	Select only if existing design uses 10 V gate bias and thermal margin permits higher R_DS(on) at 5 V.
IRF1404ZLPBF	40 V V_DS, 3.8 mΩ R_DS(on) at 10 V_GS; no AEC-Q101 qualification; 175 °C rating not validated.	Limited to non-safety-critical 12 V loads; not approved for engine bay or transmission use per automotive OEM requirements.	Acceptable only for aftermarket or non-automotive industrial 12 V switching where qualification is not mandated.

Compared with STL220N6F7 and IRF1404ZLPBF, BUK954R8-60E uniquely delivers AEC-Q101 compliance, true 5 V logic-level turn-on at 175 °C, and verified 273 mJ avalanche ruggedness - making it the sole choice for production automotive start-stop, transmission, and lighting control where reliability and qualification are mandatory.

Availability

BUK954R8-60E is available at Aetrix Electronics and suitable for automotive start-stop micro-hybrid systems, transmission solenoid control, 12 V LED lighting modules, and engine cooling fan drivers requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for BUK954R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

BUK954R8-60E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for thermally demanding 12 V automotive applications requiring AEC-Q101 compliance, avalanche ruggedness, and direct microcontroller interfacing.

FAQ

Is BUK954R8-60E suitable for high-frequency PWM switching above 100 kHz?

No - while its Q_GD (20.3 nC) and C_iss (7.28 nF) support moderate-speed switching, the device is optimized for 1–20 kHz automotive power control (e.g., solenoids, fans, lamps), not high-frequency SMPS. Fast switching increases conduction loss due to R_DS(on) temperature dependence and risks exceeding safe operating area limits at high V_DS/I_D combinations.

Can BUK954R8-60E be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (normalized factor rises with T_j) enables inherent current sharing when paralleled with identical units. However, layout symmetry, matched gate drive impedance, and individual source inductance (<7.5 nH) must be controlled to prevent dynamic imbalance; derating total current by 15% is recommended for reliability.

What is the maximum allowable mounting base temperature for continuous 100 A operation?

The datasheet specifies 100 A continuous drain current only at T_mb = 25 °C (Fig. 1). At T_mb = 100 °C, maximum continuous I_D drops to 100 A - but practical operation at that mounting temperature requires verifying junction temperature stays ≤175 °C using R_th(j-mb) = 0.64 K/W. For sustained 100 A, T_mb must remain ≤75 °C to maintain safety margin.

Does the source-drain body diode support synchronous rectification in buck converters?

No - although the diode has low V_SD (0.8–1.2 V) and fast t_rr (39 ns), it is not optimized for synchronous rectification: Q_r = 56 nC and lack of soft-recovery characteristics increase switching losses and EMI. Dedicated synchronous rectifier MOSFETs with lower Q_r and tailored diode specs are preferred for this topology.

BUK954R8-60E,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 9710 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUK954R8-60E,127 FAQ

1.How can I place an order for BUK954R8-60E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK954R8-60E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK954R8-60E,127 reliable?

The price and inventory of BUK954R8-60E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK954R8-60E,127 is usually 5 days.

3.What payment methods are accepted for BUK954R8-60E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK954R8-60E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK954R8-60E,127?

BUK954R8-60E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK954R8-60E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK954R8-60E,127?

For technical support, including BUK954R8-60E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK954R8-60E,127 requirements.

6.How does Aetrix verify that BUK954R8-60E,127 is sourced from the original manufacturer or authorized distributors?

All BUK954R8-60E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK954R8-60E,127 meets industry standards.

7.What is the process for return or replacement of BUK954R8-60E,127?

All BUK954R8-60E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK954R8-60E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK954R8-60E,127 part is unused and in its original packaging.

Return procedure for BUK954R8-60E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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