NXP Semiconductors BUK956R1-100E,127
- Part No.:
- BUK956R1-100E,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK956R1-100E,127.pdf
- Description:
- MOSFET N-CH 100V 120A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,919
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Product details
Overview
BUK956R1-100E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 100 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 6.1 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive power control circuits.
For engineers reviewing the BUK956R1-100E datasheet, BUK956R1-100E pinout, BUK956R1-100E application, or BUK956R1-100E equivalent, key selection considerations include its 175 °C junction rating, repetitive avalanche capability, true logic-level gate drive (VGS(th) ≥ 0.5 V at 175 °C), and mounting-base thermal resistance of 0.43 K/W.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 133 nC, QGD = 51 nC). Its gate threshold voltage remains functional up to 175 °C, enabling reliable operation in under-hood environments without elevated gate drive voltage.
The integrated source-drain diode supports freewheeling in inductive loads, with VSD = 0.77 V at IS = 25 A and Tj = 25 °C, and trr = 70 ns. Avalanche ruggedness is specified at EDS(AL)S = 387 mJ (unclamped, single-pulse), supporting robust fault handling in motor and solenoid control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/24 V/48 V automotive systems |
| ID (continuous) | 120 A at Tmb = 25 °C - Package-limited current capacity requiring heatsink mounting |
| RDS(on) | 6.1 mΩ max at VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A |
| Tj max | 175 °C - Qualified for under-hood automotive use per AEC-Q101 |
| QGD | 51 nC - Low gate-drain charge minimizes Miller-induced switching instability |
| Rth(j-mb) | 0.43 K/W - Enables high-power dissipation with direct heatsink contact |
| VGS(th) | ≥0.5 V at Tj = 175 °C - Ensures turn-on with standard 3.3 V/5 V logic-level drivers |
| EDS(AL)S | 387 mJ - Single-pulse unclamped avalanche energy supports transient overvoltage survival |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base (pin 2/mb), 3 leads, and 1 mounting hole. Mounting base is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - Accepts logic-level drive (0–5 V); low Ciss = 17.46 pF enables fast switching |
| 2 / mb | D / Drain mounting base | Main drain connection and primary thermal path - Must be mounted to heatsink for rated power dissipation |
| 3 | S | Source return - Internal source inductance LS = 7.5 nH affects high-di/dt switching behavior |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing |
| Repetitive avalanche rated | Supports repeated inductive switching events without degradation, critical for motor commutation |
| 175 °C junction rating | Enables operation in engine bay or transmission control units without derating at ambient >125 °C |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures turn-on margin with microcontroller GPIOs or low-voltage drivers |
| Low RDS(on) × QG figure-of-merit | 6.1 mΩ × 133 nC = 811 mΩ·nC - Balances conduction and switching losses in high-frequency PWM |
| Integrated source-drain diode | VSD = 0.77 V @ 25 A enables efficient freewheeling in H-bridge and relay driver topologies |
Applications
| Engine Start-Stop Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: High-current switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent stop-start cycles. IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; handles 120 A peak currents with <100 ns switching transitions. Use Value: 175 °C rating and repetitive avalanche capability prevent failure during cranking transients and thermal cycling. |
Use Scenario: Precision current regulation for hydraulic pressure control solenoids in automatic transmissions. IC Role / Device Role / Timing Role: Low-RDS(on) high-side or low-side switch delivering 10–30 A DC or PWM current to solenoid coils. Use Value: 6.1 mΩ RDS(on) minimizes self-heating at sustained 25 A, while 51 nC QGD ensures clean PWM edge control. |
| 12 V/24 V Body Control Module | 48 V Mild Hybrid Auxiliary Load Switch |
|
Use Scenario: Centralized power distribution for lamps, fans, and window motors in automotive body electronics. IC Role / Device Role / Timing Role: High-reliability load switch replacing mechanical relays; driven directly by 5 V microcontroller outputs. Use Value: True logic-level gate (VGS(th) ≥ 0.5 V at 175 °C) eliminates need for gate driver ICs, reducing BOM count and layout area. |
Use Scenario: Isolation and protection switching for auxiliary systems (e.g., HVAC compressors, active suspension) in 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Primary power switch interfacing 48 V bus to downstream loads; withstands load dump transients up to 100 V. Use Value: 100 V VDS rating and 387 mJ avalanche energy provide margin against ISO 16750-2 load dump surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 3.5 mΩ @ 10 V, TO-220FP package; requires 10 V gate drive for full RDS(on) | Higher current capability but not logic-level; needs gate driver for 3.3 V/5 V MCU interfaces | Select when higher peak current and lower RDS(on) justify added gate drive complexity |
| IRF1405PBF | 55 V, 169 A, 5.3 mΩ @ 10 V, TO-220AB; non-AEC-Q101, 175 °C rated | Limited to 12 V/24 V systems only; lacks automotive qualification and avalanche rating | Acceptable for industrial or consumer 24 V motor control where AEC-Q101 is not required |
Compared with STL220N10F7 and IRF1405PBF, the BUK956R1-100E uniquely combines AEC-Q101 qualification, true logic-level gate operation, and 100 V/120 A capability in a single TO-220AB package-making it the only drop-in solution for thermally demanding automotive switching where gate drive simplicity and reliability are mandatory.
Availability
BUK956R1-100E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control modules, and 48 V mild hybrid auxiliary load switching requiring stable component supply across extended temperature and lifetime requirements.
Supply support for BUK956R1-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The BUK956R1-100E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in thermally constrained automotive environments.
FAQ
What is the maximum continuous drain current rating for BUK956R1-100E?
The BUK956R1-100E supports 120 A continuous drain current at mounting base temperature (Tmb) = 25 °C, limited by package thermal capacity-not silicon capability. At Tmb = 100 °C, the rating drops to 101 A per datasheet Figure 1. Derating must follow the normalized power curve in Figure 2, and heatsink mounting is mandatory to achieve rated current.
Is BUK956R1-100E compatible with 3.3 V microcontroller GPIOs?
Yes, the BUK956R1-100E is a true logic-level MOSFET: its gate-source threshold voltage VGS(th) is guaranteed ≥0.5 V at Tj = 175 °C, ensuring reliable turn-on with 3.3 V or 5 V drive. At VGS = 5 V, RDS(on) is 6.1 mΩ max-fully leveraging its low-on-resistance design without external level-shifting circuitry.
Does BUK956R1-100E have avalanche capability, and how is it rated?
Yes, the BUK956R1-100E is repetitively avalanche-rated. Its single-pulse unclamped avalanche energy EDS(AL)S is 387 mJ (ID = 120 A, Vsup ≤ 100 V, Tj(init) = 25 °C). This rating enables robust operation during inductive load switching transients common in motor and solenoid control, as confirmed in datasheet Figure 3 and Section 5.
What is the thermal resistance from junction to mounting base for BUK956R1-100E?
The BUK956R1-100E has a maximum thermal resistance Rth(j-mb) of 0.43 K/W from junction to mounting base, measured per Figure 5. This low value reflects its TO-220AB (SOT78A) package design with direct die-to-mounting-base thermal path-requiring mechanical attachment to a heatsink for rated power dissipation (Ptot = 349 W at Tmb = 25 °C).
How is the BUK956R1-100E marked on the package?
The BUK956R1-100E is marked with its full type number "BUK956R1-100E" on the top surface of the TO-220AB (SOT78A) package, as specified in Table 4 of the datasheet. No abbreviated or secondary marking codes are used-ensuring unambiguous visual identification in automated assembly and field service.
BUK956R1-100E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 133 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17460 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK956R1-100E,127 FAQ
1.How can I place an order for BUK956R1-100E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK956R1-100E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK956R1-100E,127 reliable?
The price and inventory of BUK956R1-100E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK956R1-100E,127 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK956R1-100E,127?
For technical support, including BUK956R1-100E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK956R1-100E,127 requirements.
6.How does Aetrix verify that BUK956R1-100E,127 is sourced from the original manufacturer or authorized distributors?
All BUK956R1-100E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK956R1-100E,127 meets industry standards.
7.What is the process for return or replacement of BUK956R1-100E,127?
All BUK956R1-100E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK956R1-100E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK956R1-100E,127 part is unused and in its original packaging.
Return procedure for BUK956R1-100E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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