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NXP Semiconductors BUK956R1-100E,127

Part No.:
BUK956R1-100E,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUK956R1-100E,127.pdf
Description:
MOSFET N-CH 100V 120A TO220AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,919

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Product details

Overview

BUK956R1-100E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in TO-220AB (SOT78A) package, rated for 100 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 6.1 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive power control circuits.

For engineers reviewing the BUK956R1-100E datasheet, BUK956R1-100E pinout, BUK956R1-100E application, or BUK956R1-100E equivalent, key selection considerations include its 175 °C junction rating, repetitive avalanche capability, true logic-level gate drive (VGS(th) ≥ 0.5 V at 175 °C), and mounting-base thermal resistance of 0.43 K/W.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 133 nC, QGD = 51 nC). Its gate threshold voltage remains functional up to 175 °C, enabling reliable operation in under-hood environments without elevated gate drive voltage.

The integrated source-drain diode supports freewheeling in inductive loads, with VSD = 0.77 V at IS = 25 A and Tj = 25 °C, and trr = 70 ns. Avalanche ruggedness is specified at EDS(AL)S = 387 mJ (unclamped, single-pulse), supporting robust fault handling in motor and solenoid control.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for 12 V/24 V/48 V automotive systems
ID (continuous) 120 A at Tmb = 25 °C - Package-limited current capacity requiring heatsink mounting
RDS(on) 6.1 mΩ max at VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A
Tj max 175 °C - Qualified for under-hood automotive use per AEC-Q101
QGD 51 nC - Low gate-drain charge minimizes Miller-induced switching instability
Rth(j-mb) 0.43 K/W - Enables high-power dissipation with direct heatsink contact
VGS(th) ≥0.5 V at Tj = 175 °C - Ensures turn-on with standard 3.3 V/5 V logic-level drivers
EDS(AL)S 387 mJ - Single-pulse unclamped avalanche energy supports transient overvoltage survival

Pinout & Package

TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base (pin 2/mb), 3 leads, and 1 mounting hole. Mounting base is electrically connected to drain.

Pin/Terminal Circuit Role Design Meaning
1 G Gate input - Accepts logic-level drive (0–5 V); low Ciss = 17.46 pF enables fast switching
2 / mb D / Drain mounting base Main drain connection and primary thermal path - Must be mounted to heatsink for rated power dissipation
3 S Source return - Internal source inductance LS = 7.5 nH affects high-di/dt switching behavior

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing
Repetitive avalanche rated Supports repeated inductive switching events without degradation, critical for motor commutation
175 °C junction rating Enables operation in engine bay or transmission control units without derating at ambient >125 °C
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures turn-on margin with microcontroller GPIOs or low-voltage drivers
Low RDS(on) × QG figure-of-merit 6.1 mΩ × 133 nC = 811 mΩ·nC - Balances conduction and switching losses in high-frequency PWM
Integrated source-drain diode VSD = 0.77 V @ 25 A enables efficient freewheeling in H-bridge and relay driver topologies

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-current switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent stop-start cycles.

IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; handles 120 A peak currents with <100 ns switching transitions.

Use Value: 175 °C rating and repetitive avalanche capability prevent failure during cranking transients and thermal cycling.

Use Scenario: Precision current regulation for hydraulic pressure control solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: Low-RDS(on) high-side or low-side switch delivering 10–30 A DC or PWM current to solenoid coils.

Use Value: 6.1 mΩ RDS(on) minimizes self-heating at sustained 25 A, while 51 nC QGD ensures clean PWM edge control.

12 V/24 V Body Control Module 48 V Mild Hybrid Auxiliary Load Switch

Use Scenario: Centralized power distribution for lamps, fans, and window motors in automotive body electronics.

IC Role / Device Role / Timing Role: High-reliability load switch replacing mechanical relays; driven directly by 5 V microcontroller outputs.

Use Value: True logic-level gate (VGS(th) ≥ 0.5 V at 175 °C) eliminates need for gate driver ICs, reducing BOM count and layout area.

Use Scenario: Isolation and protection switching for auxiliary systems (e.g., HVAC compressors, active suspension) in 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Primary power switch interfacing 48 V bus to downstream loads; withstands load dump transients up to 100 V.

Use Value: 100 V VDS rating and 387 mJ avalanche energy provide margin against ISO 16750-2 load dump surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N10F7 100 V, 220 A, 3.5 mΩ @ 10 V, TO-220FP package; requires 10 V gate drive for full RDS(on) Higher current capability but not logic-level; needs gate driver for 3.3 V/5 V MCU interfaces Select when higher peak current and lower RDS(on) justify added gate drive complexity
IRF1405PBF 55 V, 169 A, 5.3 mΩ @ 10 V, TO-220AB; non-AEC-Q101, 175 °C rated Limited to 12 V/24 V systems only; lacks automotive qualification and avalanche rating Acceptable for industrial or consumer 24 V motor control where AEC-Q101 is not required

Compared with STL220N10F7 and IRF1405PBF, the BUK956R1-100E uniquely combines AEC-Q101 qualification, true logic-level gate operation, and 100 V/120 A capability in a single TO-220AB package-making it the only drop-in solution for thermally demanding automotive switching where gate drive simplicity and reliability are mandatory.

Availability

BUK956R1-100E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control modules, and 48 V mild hybrid auxiliary load switching requiring stable component supply across extended temperature and lifetime requirements.

Supply support for BUK956R1-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK956R1-100E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in thermally constrained automotive environments.

FAQ

What is the maximum continuous drain current rating for BUK956R1-100E?

The BUK956R1-100E supports 120 A continuous drain current at mounting base temperature (Tmb) = 25 °C, limited by package thermal capacity-not silicon capability. At Tmb = 100 °C, the rating drops to 101 A per datasheet Figure 1. Derating must follow the normalized power curve in Figure 2, and heatsink mounting is mandatory to achieve rated current.

Is BUK956R1-100E compatible with 3.3 V microcontroller GPIOs?

Yes, the BUK956R1-100E is a true logic-level MOSFET: its gate-source threshold voltage VGS(th) is guaranteed ≥0.5 V at Tj = 175 °C, ensuring reliable turn-on with 3.3 V or 5 V drive. At VGS = 5 V, RDS(on) is 6.1 mΩ max-fully leveraging its low-on-resistance design without external level-shifting circuitry.

Does BUK956R1-100E have avalanche capability, and how is it rated?

Yes, the BUK956R1-100E is repetitively avalanche-rated. Its single-pulse unclamped avalanche energy EDS(AL)S is 387 mJ (ID = 120 A, Vsup ≤ 100 V, Tj(init) = 25 °C). This rating enables robust operation during inductive load switching transients common in motor and solenoid control, as confirmed in datasheet Figure 3 and Section 5.

What is the thermal resistance from junction to mounting base for BUK956R1-100E?

The BUK956R1-100E has a maximum thermal resistance Rth(j-mb) of 0.43 K/W from junction to mounting base, measured per Figure 5. This low value reflects its TO-220AB (SOT78A) package design with direct die-to-mounting-base thermal path-requiring mechanical attachment to a heatsink for rated power dissipation (Ptot = 349 W at Tmb = 25 °C).

How is the BUK956R1-100E marked on the package?

The BUK956R1-100E is marked with its full type number "BUK956R1-100E" on the top surface of the TO-220AB (SOT78A) package, as specified in Table 4 of the datasheet. No abbreviated or secondary marking codes are used-ensuring unambiguous visual identification in automated assembly and field service.

BUK956R1-100E,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
133 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
17460 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

BUK956R1-100E,127 FAQ

1.How can I place an order for BUK956R1-100E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK956R1-100E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK956R1-100E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK956R1-100E,127 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK956R1-100E,127?

For technical support, including BUK956R1-100E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK956R1-100E,127 requirements.

6.How does Aetrix verify that BUK956R1-100E,127 is sourced from the original manufacturer or authorized distributors?

All BUK956R1-100E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK956R1-100E,127 meets industry standards.

7.What is the process for return or replacement of BUK956R1-100E,127?

All BUK956R1-100E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK956R1-100E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK956R1-100E,127 part is unused and in its original packaging.

Return procedure for BUK956R1-100E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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