Nexperia USA Inc. BUK9604-40A,118
- Part No.:
- BUK9604-40A,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK9604-40A,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,785
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Product details
Overview
BUK9604-40A,118 from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, designed for automotive 12 V load switching. It delivers 75 A continuous drain current at 5 V gate drive, features 3.5 mΩ typical RDS(on) at VGS = 5 V and 25 °C, supports 175 °C junction operation, and integrates a robust source-drain diode with 531 nC recovered charge - deployed in engine control modules and body electronics.
For engineers reviewing the BUK9604-40A datasheet, BUK9604-40A pinout, BUK9604-40A application, or BUK9604-40A equivalent, this page provides verified thermal resistance (Rth(j-mb) = 0.5 K/W), avalanche energy rating (1.6 J), gate charge profile (QG(tot) = 128 nC), and mounting-base–referenced SOA curves critical for high-reliability automotive power design.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance while maintaining logic-level gate compatibility (VGS(th) = 1.5 V typ., 0.5–2.3 V range across -55 to 175 °C). Its D2PAK package features a thermally optimized mounting base directly connected to the drain, enabling efficient heat transfer to heatsinks in space-constrained automotive environments.
The device exhibits unclamped inductive switching capability with 1.6 J non-repetitive avalanche energy at 75 A and 40 V, and its dynamic characteristics include QGD = 56 nC and Ciss = 6200 pF (typ.), supporting stable PWM operation up to 100 kHz in motor and solenoid drivers without excessive gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - defines safe blocking voltage for 12 V automotive systems with load-dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by package thermal capacity, not silicon die. |
| RDS(on) | 3.5 mΩ typ. @ VGS = 5 V, ID = 25 A, Tj = 25 °C - enables <1.5 W conduction loss at 50 A. |
| Ptot | 300 W @ Tmb = 25 °C - reflects thermal limit of D2PAK mounting base interface. |
| Rth(j-mb) | 0.5 K/W - quantifies junction-to-heatsink thermal path efficiency for thermal modeling. |
| EAS | 1.6 J unclamped avalanche - supports reliable inductive turn-off in relay/solenoid circuits without external snubbers. |
| QG(tot) | 128 nC @ VGS = 5 V - determines minimum gate driver current (≥1.3 A peak) for 100 ns switching transitions. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input terminal; accepts 4.3–5 V drive for full enhancement; 100 nA max leakage at 10 V. |
| 2 (D) | Drain | Not externally accessible - internally bonded to mounting base; forms main high-side power path and thermal interface. |
| 3 (S) | Source | Power return node; referenced to gate drive; internal source inductance = 7.5 nH limits dI/dt-induced ringing. |
| Mounting Base (mb) | Drain / Thermal Interface | Electrically tied to drain; provides low-impedance thermal path (Rth(j-mb) = 0.5 K/W) to heatsink or PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control and chassis systems. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments without derating in ambient up to 125 °C. |
| Logic-level gate drive (VGS(th) ≤ 2 V) | Direct interface with 3.3 V/5 V microcontrollers eliminates need for level-shifting circuitry. |
| Low RDS(on) at 5 V gate drive | 3.5 mΩ typ. reduces conduction losses by >30% vs. standard MOSFETs requiring 10 V gate drive. |
| Integrated source-drain diode | Recovery charge Qr = 531 nC supports freewheeling in inductive loads without external diode. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Control |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with 1–5 ms pulse width and 10 A peak current. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and de-energization. Use Value: 56 nC QGD and 306 ns fall time enable precise 10 µs current tailoring; 1.6 J avalanche rating absorbs inductive kickback without clamping. |
Use Scenario: PWM-controlled 12 V DC blower motor delivering 30–60 A during cabin heating/cooling cycles. IC Role / Device Role / Timing Role: Low-side switching element managing motor current flow and direction via H-bridge configuration. Use Value: 3.5 mΩ RDS(on) limits conduction loss to <6 W at 60 A; 0.5 K/W Rth(j-mb) sustains 175 °C junction temp with minimal heatsink. |
| Body Control Module (BCM) Headlamp Relay Replacement | Commercial Vehicle Solenoid Actuator Interface |
Use Scenario: Solid-state replacement of mechanical relays driving 55 W halogen headlamps (4.6 A continuous, 15 A inrush). IC Role / Device Role / Timing Role: High-side or low-side load switch providing overcurrent and thermal protection. Use Value: 75 A ID rating accommodates repeated inrush surges; AEC-Q101 compliance ensures 15-year field reliability in vibration-prone lighting circuits. |
Use Scenario: Driving 24 V solenoids in truck air-brake or transmission control systems with 200 ms duty cycle and 30 A peak. IC Role / Device Role / Timing Role: Power stage switch interfacing with CAN-based controller for precise actuation timing. Use Value: 175 °C Tj rating prevents thermal shutdown in enclosed cab environments; 2.5 nH internal drain inductance minimizes voltage overshoot during fast turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 4.5 V (lower), but rated only to 150 °C junction and lacks AEC-Q101 certification. | Suitable for industrial motor drives where automotive qualification is not required. | Select when higher efficiency at 4.5 V drive is prioritized over automotive qualification and extended temperature range. |
| IRF1404ZLPbF | RDS(on) = 4.0 mΩ @ 10 V (not logic-level); requires 10 V gate drive and has no AEC-Q101 rating. | Used in legacy 12 V power supplies and non-automotive switching applications. | Choose only if existing 10 V gate driver infrastructure exists and automotive qualification is unnecessary. |
Compared with STL220N4F7AG and IRF1404ZLPbF, BUK9604-40A uniquely combines AEC-Q101 compliance, 175 °C operation, and true 5 V logic-level drive - making it the sole option for new automotive designs requiring both functional safety and thermal robustness without gate boosting.
Availability
BUK9604-40A,118 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and commercial vehicle power distribution systems requiring stable component supply across multi-year production cycles.
Supply support for BUK9604-40A,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with core expertise in automotive-grade components and advanced packaging.
This device belongs to Nexperia's TrenchMOS automotive logic-level power MOSFET product line, engineered specifically for replacing electromechanical relays and discrete switches in 12 V/24 V automotive power networks.
FAQ
What is the maximum allowable gate-source voltage for BUK9604-40A,118?
The absolute maximum VGS is ±15 V per the datasheet limiting values table. Operation beyond ±10 V risks accelerated gate oxide degradation, especially at elevated temperatures. For reliable long-term performance, gate drive should be clamped to +5 V (logic-level) and –10 V (for fast turn-off), with transient spikes suppressed using Zener diodes or active clamp circuits.
Can BUK9604-40A,118 be used in high-frequency PWM applications above 50 kHz?
Yes - its QG(tot) = 128 nC and QGD = 56 nC support clean switching up to 100 kHz with appropriate gate driver strength (≥1.5 A peak). However, above 50 kHz, layout parasitics become critical: keep gate loop inductance below 10 nH and use Kelvin source connection to minimize Miller-induced oscillation during dV/dt transitions.
Is the mounting base electrically isolated from the drain terminal?
No - the mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 (pinning information) and Figure 16 (package outline). This direct connection enables optimal thermal transfer but requires electrical isolation of the heatsink from system ground when used in high-side configurations.
Does BUK9604-40A,118 include built-in ESD protection?
No - the datasheet does not specify integrated ESD protection structures. The device exhibits 2 kV HBM ESD rating per JEDEC JESD22-A114 (standard for automotive MOSFETs), meaning external TVS diodes or series resistors are required on gate traces in assembly environments with handling risk or connector hot-plug events.
BUK9604-40A,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.3V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 128 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK9604-40A,118 FAQ
1.How can I place an order for BUK9604-40A,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9604-40A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BUK9604-40A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9604-40A,118 is usually 5 days.
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6.How does Aetrix verify that BUK9604-40A,118 is sourced from the original manufacturer or authorized distributors?
All BUK9604-40A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9604-40A,118 meets industry standards.
7.What is the process for return or replacement of BUK9604-40A,118?
All BUK9604-40A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9604-40A,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9604-40A,118 part is unused and in its original packaging.
Return procedure for BUK9604-40A,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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