Nexperia USA Inc. BUK9606-40B,118
- Part No.:
- BUK9606-40B,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK9606-40B,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,708
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK9606-40B,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 40 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers low on-resistance (5.7 mΩ typ at VGS = 5 V, ID = 25 A, Tj = 25 °C) and is AEC-Q101 qualified for automotive critical power switching.
For engineers reviewing the BUK9606-40B,118 datasheet, BUK9606-40B,118 pinout, BUK9606-40B,118 application, or BUK9606-40B,118 equivalent, this device supports high-current 12 V load control in thermally demanding environments-especially where logic-level gate drive (5 V compatible), avalanche ruggedness (494 mJ), and robust thermal performance (Rth(j-mb) = 0.74 K/W) are required.
Technical Context
This FET uses TrenchMOS technology to achieve low RDS(on) while maintaining fast switching (td(on) = 43 ns, tf = 92 ns) and low gate charge (QG(tot) = 44 nC, QGD = 17 nC). Its gate threshold voltage (VGS(th) = 1.1–2.0 V) ensures reliable turn-on with standard 5 V microcontroller outputs.
The device integrates a robust body diode (VSD = 0.85 V typ at IS = 25 A) with fast reverse recovery (trr = 61 ns, Qr = 57 nC), enabling efficient freewheeling in inductive loads like solenoids and motors without external diodes in many designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports full 12 V automotive battery systems with margin for load dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - enables high-power switching without external heatsink in moderate airflow. |
| RDS(on) | 5.7 mΩ typical at VGS = 5 V - reduces conduction loss to ≤8.1 W at 75 A, easing thermal design. |
| EAS | 494 mJ non-repetitive avalanche energy - withstands unclamped inductive switching events common in motor/solenoid drives. |
| Rth(j-mb) | 0.74 K/W - allows direct mounting to PCB copper or heatsink for efficient heat extraction from junction to base. |
| VGS(th) | 1.5 V typical - ensures full enhancement with 3.3 V or 5 V logic-level drivers, eliminating need for gate boosters. |
| QGD | 17 nC - limits Miller-induced switching delay and improves controllability during hard commutation. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 5 V logic-level drive; requires <10 Ω series resistance for optimal EMI and ringing control. |
| 2 (D) | Drain | Not externally accessible - internally connected to mounting base; primary high-side power node and thermal interface. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configuration; bond-wire inductance (LS = 7.5 nH) affects switching behavior. |
| Mounting Base (mb) | Drain / Thermal Interface | Electrically tied to drain; must be soldered to large copper pour or heatsink for rated power dissipation (203 W). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, lighting, and chassis systems. |
| 175 °C junction rating | Enables operation in under-hood environments without derating in ambient up to 125 °C with proper thermal design. |
| Logic-level gate drive (VGS(th) ≤ 2.0 V) | Direct compatibility with 3.3 V/5 V MCUs and ASICs-no level-shifting or gate driver IC required. |
| Low RDS(on) at 5 V drive | 5.7 mΩ typ eliminates need for paralleling devices in 12 V/50–75 A switching nodes. |
| Integrated avalanche ruggedness | 494 mJ EAS supports reliable operation in inductive load switching without external snubbers. |
Applications
| Automotive Lighting Control | Engine Management Solenoid Drive |
|---|---|
|
Use Scenario: High-side switching of LED headlamps and daytime running lights in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: Power switch controlling current flow to lamp load; operates in DC or PWM mode up to 2 kHz. Use Value: Low RDS(on) minimizes heat generation in confined headlamp housings; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime. |
Use Scenario: Driving fuel injector or idle air control solenoids requiring precise 12 V pulse-width modulated actuation. IC Role / Device Role / Timing Role: Low-side switch enabling fast turn-off (tf = 92 ns) and controlled current decay via integrated body diode. Use Value: Fast recovery (trr = 61 ns) and low Qr (57 nC) reduce energy loss and electromagnetic noise during solenoid deactivation. |
| 12 V Battery-Powered Motor Control | Industrial HVAC Blower Fan Driver |
|
Use Scenario: Bidirectional or unidirectional DC motor control in portable tools and e-bikes using H-bridge or half-bridge topology. IC Role / Device Role / Timing Role: High-current power stage transistor handling peak currents up to 516 A (pulsed); used in low-side position. Use Value: 75 A continuous rating and 203 W power dissipation support sustained motor stall conditions without thermal shutdown. |
Use Scenario: On/off and speed-controlled blower fan in commercial HVAC units powered from 12 V auxiliary supply. IC Role / Device Role / Timing Role: Thermally robust power switch mounted directly to metal chassis; handles frequent start-stop cycles and dust-laden thermal environments. Use Value: 175 °C Tj rating and Rth(j-mb) = 0.74 K/W allow stable operation in enclosed enclosures exceeding 85 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A (Tc = 25 °C), RDS(on) = 1.45 mΩ @ VGS = 10 V; requires 10 V gate drive for full rating; not AEC-Q101 qualified. | Higher current capacity but larger TO-263 package; suited for industrial UPS or solar charge controllers-not automotive. | Select when higher peak current and lower RDS(on) are needed and AEC-Q101 is not mandated. |
| IRF1404ZLPbF | 40 V, 180 A (Tc = 25 °C), RDS(on) = 3.7 mΩ @ VGS = 10 V; VGS(th) = 2–4 V; not AEC-Q101 qualified; older planar process. | Larger footprint (TO-220AB); higher gate charge (QG = 110 nC); less suitable for high-frequency PWM in space-constrained automotive modules. | Choose only for legacy industrial designs where cost is prioritized over thermal efficiency and qualification. |
Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK9606-40B,118 uniquely balances AEC-Q101 compliance, 5 V logic-level drive, compact D2PAK footprint, and 0.74 K/W thermal resistance-making it the preferred choice for new automotive power modules where qualification, size, and thermal performance are jointly constrained.
Availability
BUK9606-40B,118 is available at Aetrix Electronics and suitable for automotive lighting control, engine management solenoid drive, and 12 V battery-powered motor control requiring stable component supply across production lifecycles.
Supply support for BUK9606-40B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions-originating from Philips and now part of Beijing JianGuang Asset Management Co., Ltd.
The BUK9606-40B,118 belongs to Nexperia's Automotive Logic-Level Power MOSFET product line, engineered specifically for AEC-Q101-compliant 12 V automotive power switching where low gate drive voltage, thermal resilience, and avalanche capability are essential.
FAQ
Is BUK9606-40B,118 suitable for high-frequency PWM motor control?
Yes-it supports PWM frequencies up to 20 kHz with minimal switching loss due to low QGD (17 nC) and fast transition times (tr = 145 ns, tf = 92 ns). However, layout must minimize source inductance (LS = 7.5 nH) to avoid gate oscillation; use Kelvin source connection in critical designs.
What is the maximum safe operating temperature for continuous use?
The device is rated for continuous operation up to Tj = 175 °C. At Tmb = 100 °C, its continuous drain current is derated to 75 A (same as at 25 °C) per Figure 1. Sustained operation above Tmb = 125 °C requires thermal modeling to ensure junction temperature remains within limit.
Can BUK9606-40B,118 replace a standard 10 V gate MOSFET in an existing 5 V design?
Yes-its VGS(th) (1.1–2.0 V) and RDS(on) spec at VGS = 5 V (5.7 mΩ typ) make it a drop-in replacement for many 10 V gate devices in 5 V logic-driven circuits, provided package footprint and thermal interface match. No gate driver redesign is needed.
Does the mounting base require electrical isolation from the PCB?
No-the mounting base is electrically connected to the drain (pin 2) and must be soldered directly to a copper pour or heatsink that is at drain potential. Isolation would compromise thermal performance and violate the device's Safe Operating Area (SOA) limits shown in Figure 3.
BUK9606-40B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4901 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 203W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK9606-40B,118 FAQ
1.How can I place an order for BUK9606-40B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9606-40B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9606-40B,118 reliable?
The price and inventory of BUK9606-40B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9606-40B,118 is usually 5 days.
3.What payment methods are accepted for BUK9606-40B,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9606-40B,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9606-40B,118?
BUK9606-40B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9606-40B,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9606-40B,118?
For technical support, including BUK9606-40B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9606-40B,118 requirements.
6.How does Aetrix verify that BUK9606-40B,118 is sourced from the original manufacturer or authorized distributors?
All BUK9606-40B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9606-40B,118 meets industry standards.
7.What is the process for return or replacement of BUK9606-40B,118?
All BUK9606-40B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9606-40B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9606-40B,118 part is unused and in its original packaging.
Return procedure for BUK9606-40B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK9606-40B,118 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

