Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9608-55A,118

Part No.:
BUK9608-55A,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK9608-55A,118.pdf
Description:
MOSFET N-CH 55V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,419

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9608-55A,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 6.4 mΩ RDS(on) at VGS = 10 V and ID = 25 A, and is AEC-Q101 qualified for automotive power switching of 12 V/24 V loads including motors, lamps, and solenoids.

For engineers reviewing the BUK9608-55A,118 datasheet, BUK9608-55A,118 pinout, BUK9608-55A,118 application, or BUK9608-55A,118 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.5 V typ), thermal robustness (Rth(j-mb) = 0.59 K/W), avalanche energy rating (670 mJ), and automotive qualification status.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and high current capability in a surface-mount D2PAK package with integrated mounting base connected to drain. Its gate threshold voltage (1.0–2.0 V at 25 °C) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The internal structure includes a robust source-drain diode (VSD = 0.85 V at 25 A), fast switching characteristics (tr = 175 ns, tf = 167 ns), and specified dynamic parameters including QGD = 43 nC and Ciss = 4551 pF - all validated under automotive-relevant test conditions per IEC 60134 limiting values.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V maximum drain-source voltage - supports 24 V automotive systems with 2× safety margin against load-dump transients.
RDS(on) 6.4 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 40 A, reducing heatsink requirements.
ID (cont) 75 A at Tmb = 25 °C - limited by package thermal capacity, not die capability (IDM = 503 A pulsed).
Tj max 175 °C - allows operation in engine bay or under-hood environments without derating below ambient 125 °C.
EAS 670 mJ non-repetitive avalanche energy - provides robustness against inductive switching spikes in motor/solenoid control.
Rth(j-mb) 0.59 K/W - enables efficient heat transfer to PCB copper or heatsink via exposed mounting base (drain-connected).
VGS(th) 1.5 V typical at Tj = 25 °C - ensures reliable turn-on with standard logic-level MCU GPIOs (3.3 V/5 V).

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts logic-level input (VGS(th) ≤ 2 V); requires <100 nA leakage current at 10 V.
2 D (Drain) Main power output node; internally bonded to mounting base (mb); carries full load current and dissipates heat.
3 S (Source) Power return path; referenced to system ground; used for current sensing and gate drive reference.
mb Mounting Base Exposed copper pad electrically tied to drain; provides low-thermal-resistance path (0.59 K/W) to heatsink or PCB copper.

Key Features

Feature Design Value
Logic-level gate drive VGS(th) = 1.5 V typ enables direct interface with 3.3 V/5 V MCUs - eliminates need for gate driver ICs in cost-sensitive designs.
AEC-Q101 qualification Validated for automotive critical applications including engine control, body electronics, and ADAS power stages.
175 °C junction rating Supports sustained operation in thermally demanding locations (e.g., near exhaust, under hood) without thermal shutdown.
Low RDS(on) at 4.5 V 8.5 mΩ at VGS = 4.5 V, ID = 25 A - maintains efficiency even with marginal gate drive voltage or elevated temperature.
High avalanche ruggedness 670 mJ EAS - withstands unclamped inductive energy during MOSFET turn-off in motor/solenoid circuits without failure.

Applications

Automotive Body Control Module 12 V/24 V DC Motor Driver

Use Scenario: Switching power to door locks, window lifters, and HVAC actuators in modern vehicle BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V/24 V inductive loads with PWM or on/off duty cycles.

Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability across vehicle lifetime; low RDS(on) minimizes self-heating in densely packed modules.

Use Scenario: Driving brushed DC motors in seat adjusters, sunroof mechanisms, and cooling fans.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during motor braking and freewheeling.

Use Value: Integrated source-drain diode (VSD = 0.85 V) and 670 mJ avalanche rating suppress inductive kickback without external flyback diodes.

LED Headlamp Power Stage Industrial Solenoid Controller

Use Scenario: High-current switching of LED arrays in adaptive front lighting systems (AFS) requiring precise dimming and fault protection.

IC Role / Device Role / Timing Role: Constant-current regulation stage using PWM-controlled high-side or low-side configuration.

Use Value: Fast switching (tr/tf < 200 ns) enables high-frequency PWM (>1 kHz) with minimal switching loss and EMI.

Use Scenario: Controlling hydraulic/pneumatic solenoids in agricultural machinery, construction equipment, and factory automation valves.

IC Role / Device Role / Timing Role: Robust power switch interfacing with industrial PLC outputs or microcontroller GPIOs.

Use Value: Logic-level gate drive simplifies interface with 5 V industrial controllers; 75 A rating supports high-force solenoids up to 500 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF8AG 60 V VDS, 220 A peak, RDS(on) = 2.2 mΩ @ 10 V - lower RDS(on) but larger H2PAK-6 package and no AEC-Q101 certification. Targeted at industrial motor drives where automotive qualification is unnecessary and higher current is required. Select when higher current headroom and lower conduction loss outweigh package size and automotive compliance needs.
IRF1405PBF 55 V VDS, 169 A peak, RDS(on) = 5.3 mΩ @ 10 V - legacy TO-220 package, no logic-level gate (VGS(th) = 2–4 V), not AEC-Q101 qualified. Suitable for general-purpose 55 V switching where gate drive voltage ≥10 V is available and automotive use is excluded. Choose only for non-automotive, cost-sensitive designs with adequate gate drive voltage and thermal management infrastructure.

Compared with STL220N5LF8AG and IRF1405PBF, BUK9608-55A,118 uniquely combines AEC-Q101 qualification, true logic-level drive (≤2 V threshold), D2PAK thermal performance (0.59 K/W), and automotive-grade avalanche ruggedness - making it the only drop-in solution for space-constrained, thermally aggressive automotive power nodes.

Availability

BUK9608-55A,118 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drivers, LED headlamp power stages, and industrial solenoid controllers requiring stable component supply across extended production lifecycles.

Supply support for BUK9608-55A,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.

BUK9608-55A,118 belongs to Nexperia's Automotive Logic-Level Power MOSFET product line, engineered specifically for robust, thermally efficient switching in 12 V/24 V automotive subsystems where AEC-Q101 compliance and gate-drive simplicity are mandatory.

FAQ

Is BUK9608-55A,118 suitable for high-frequency PWM motor control?

Yes - its dynamic characteristics include tr = 175 ns and tf = 167 ns at VGS = 5 V, enabling clean switching up to 20 kHz without excessive switching loss. The QGD = 43 nC and Ciss = 4551 pF values support stable gate drive design with standard 10 Ω series resistors and 3.3 V/5 V MCU outputs.

What is the maximum continuous drain current at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 75 A - identical to the 25 °C rating - because the device's current limit is package-defined (not silicon-limited), and Figure 1 shows current remains capped at 75 A across the full 25–150 °C mounting base range.

Can BUK9608-55A,118 be used in high-side switching configurations?

Yes - its VGS rating of ±15 V and VDGR = 55 V allow safe high-side operation with appropriate gate driver biasing. However, the mounting base is tied to drain, so thermal interface must accommodate high-side voltage potential; isolation or floating heatsink design is required.

Does the device include an integrated body diode, and what are its key parameters?

Yes - it features an integrated source-drain diode with VSD = 0.85 V at IS = 25 A and Tj = 25 °C, trr = 70 ns, and Qr = 170 nC. These values enable efficient freewheeling in inductive loads and reduce need for external catch diodes in H-bridge or buck converter topologies.

BUK9608-55A,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
92 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
6021 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
253W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK9608-55A,118 FAQ

1.How can I place an order for BUK9608-55A,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9608-55A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9608-55A,118 reliable?

The price and inventory of BUK9608-55A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9608-55A,118 is usually 5 days.

3.What payment methods are accepted for BUK9608-55A,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9608-55A,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9608-55A,118?

BUK9608-55A,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9608-55A,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9608-55A,118?

For technical support, including BUK9608-55A,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9608-55A,118 requirements.

6.How does Aetrix verify that BUK9608-55A,118 is sourced from the original manufacturer or authorized distributors?

All BUK9608-55A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9608-55A,118 meets industry standards.

7.What is the process for return or replacement of BUK9608-55A,118?

All BUK9608-55A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9608-55A,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9608-55A,118 part is unused and in its original packaging.

Return procedure for BUK9608-55A,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9608-55A,118 Tags

  • BUK9608-55A,118
  • BUK9608-55A,118 PDF
  • BUK9608-55A,118 Datasheet
  • BUK9608-55A,118 Specifications
  • BUK9608-55A,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9608-55A,118
  • Buy BUK9608-55A,118
  • BUK9608-55A,118 Price
  • BUK9608-55A,118 Distributor
  • BUK9608-55A,118 Supplier
  • BUK9608-55A,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER