Nexperia USA Inc. BUK9608-55B,118

Overview

BUK9608-55B,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It features 7.1 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, Q101-compliant for automotive critical systems, and supports direct drive from 5 V microcontrollers in high-current load switching.

For engineers reviewing the BUK9608-55B,118 datasheet, BUK9608-55B,118 pinout, BUK9608-55B,118 application, or BUK9608-55B,118 equivalent, key selection criteria include logic-level gate compatibility, 175 °C thermal rating for under-hood environments, avalanche ruggedness (352 mJ), low R_DS(on) at 5 V drive, and AEC-Q101 qualification for automotive power distribution.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive capability, enabling direct interface with 5 V CMOS outputs without level-shifting. Its internal drain-source diode supports freewheeling in inductive loads, and its 0.74 K/W R_th(j-mb) enables high-power dissipation when mounted on thermally optimized PCBs or heatsinks.

The MOSFET exhibits stable threshold voltage (V_GS(th) = 1.1–2.0 V at T_j = 25 °C) and minimal R_DS(on) drift over temperature - only 2.4× increase from 25 °C to 175 °C - ensuring predictable conduction loss in thermally demanding automotive applications.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with isolated mounting base connected to drain. Dimensions per Figure 16: 15.8 × 10.3 × 4.5 mm (L × W × H), with 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N5LF8AG and IRF1404ZLPBF, the BUK9608-55B,118 uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, 55 V rating, and D2PAK thermal performance - making it the only drop-in solution for automotive high-current switching where MCU voltage, reliability, and thermal constraints intersect.

Availability

BUK9608-55B,118 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drivers, LED headlamp power stages, and industrial solenoid valve controllers requiring stable component supply across long production lifecycles.

Supply support for BUK9608-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

The BUK9608-55B belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for robust, low-loss switching in 12 V/24 V automotive power distribution networks.

FAQ

Is BUK9608-55B,118 suitable for high-side switching in automotive 24 V systems?

Yes. With 55 V V_DS rating and AEC-Q101 qualification, it withstands ISO 7637-2 load dump pulses up to ±120 V (with proper TVS clamping) and operates reliably at 24 V nominal rails. Its 5 V logic-level gate enables direct MCU control, and the D2PAK mounting base provides low-inductance, high-current drain connection essential for high-side stability.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is derated to 75 A at T_mb = 100 °C - identical to its rating at 25 °C - because current is limited by package construction, not silicon thermal limits. This reflects the device's robust D2PAK thermal design and makes it suitable for sustained high-current operation in thermally constrained enclosures.

Does BUK9608-55B,118 include an integrated body diode, and what are its recovery characteristics?

Yes, it features an integrated source-drain diode with V_SD = 0.85 V at I_S = 25 A and T_j = 25 °C. Its reverse recovery time (t_rr) is 69 ns and recovered charge (Q_r) is 72 nC under specified conditions (I_S = 20 A, dI/dt = −100 A/µs), enabling efficient freewheeling in inductive switching applications without external diodes.

How does the gate charge profile affect switching performance in PWM applications?

With Q_G(tot) = 45 nC and Q_GD = 16 nC at V_GS = 5 V, the device achieves fast, controllable switching: t_d(on) = 29 ns, t_r = 123 ns, t_d(off) = 131 ns, t_f = 86 ns. The relatively high Q_GD/Q_G ratio (~36%) necessitates careful gate driver strength selection (≥1 A peak) to minimize Miller plateau duration and prevent shoot-through in bridge configurations.